OFFSET DRIFT COMPENSATION
    1.
    发明申请

    公开(公告)号:US20190296695A1

    公开(公告)日:2019-09-26

    申请号:US15934467

    申请日:2018-03-23

    Abstract: An offset drift compensation circuit for correcting offset drift that changes with temperature. In one example, offset drift compensation circuit includes a low temperature offset compensation circuit and a high temperature offset circuit. The low temperature offset compensation circuit is configured to compensate for drift in offset at a first rate below a selected temperature. The high temperature offset compensation circuit is configured to compensate for drift in offset at a second rate above the selected temperature. The first rate is different from the second rate.

    GATE DRIVER CIRCUIT WITH CHARGE PUMP CURRENT CONTROL

    公开(公告)号:US20230100060A1

    公开(公告)日:2023-03-30

    申请号:US17489233

    申请日:2021-09-29

    Abstract: A device includes a charge pump configured to provide a current to a bootstrap capacitor responsive to a charge pump switch being closed. The device also includes a current limiter coupled in series between the charge pump switch and the charge pump. The current limiter is configured to receive a control signal from a controller that indicates whether the device is to operate in a first mode or in a second mode; responsive to the control signal indicating the first mode, allow a first value of current to the charge pump switch; and, responsive to the control signal indicating the second mode, limit the current to the charge pump switch to a second value. The second value is less than the first value.

    STABLE LEVEL SHIFTERS IN HIGH SLEW RATE OR NOISY ENVIRONMENTS

    公开(公告)号:US20230067055A1

    公开(公告)日:2023-03-02

    申请号:US17463001

    申请日:2021-08-31

    Abstract: A system includes a level shifter coupled to a voltage source, a first transistor, and a second transistor. The system also includes a first current source coupled to the first transistor and the second transistor and configured to bias the first transistor and the second transistor. The system includes a slew detector coupled to the voltage source and to the first current source, where the slew detector is configured to detect a change in voltage of the voltage source, and further configured to provide current to the first current source responsive to detecting the change. The system also includes a second current source coupled in parallel to the first current source, where the second current source is configured to provide current to the first current source responsive to a control signal.

    PREDRIVER SHORT PROTECTION
    6.
    发明申请

    公开(公告)号:US20170317619A1

    公开(公告)日:2017-11-02

    申请号:US15142852

    申请日:2016-04-29

    Abstract: A gate driver circuit includes a comparator and a gate driver. The comparator is configured to detect a short circuit in a first power field effect transistor (FET). The gate driver is configured to drive a gate of the first power FET by generating a first signal at a first drive current. In response to the comparator detecting a short circuit in the first power FET, the gate driver is further configured to pulse the first signal at a first pulldown current. After the pulse has ended, the gate driver is further configured to drive the gate of the first power FET at a first hold current. The first hold current is less than the first pulldown current.

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