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公开(公告)号:US20240258212A1
公开(公告)日:2024-08-01
申请号:US18161451
申请日:2023-01-30
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Rajen MURUGAN , Yiqi TANG , Sylvester ANKAMAH-KUSI
IPC: H01L23/495 , H01L21/56 , H01L23/00 , H01L23/31
CPC classification number: H01L23/49562 , H01L21/565 , H01L23/3114 , H01L24/16 , H01L24/48 , H01L24/49 , H01L2224/16265 , H01L2224/48175 , H01L2224/48265 , H01L2224/49107 , H01L2224/49421 , H01L2224/49427 , H01L2924/1205 , H01L2924/1206
Abstract: A packaged semiconductor device includes a lead frame and a semiconductor die. The semiconductor die has first and second opposing sides, and the first side of the die is mounted to the lead frame. A first set of bond wires and/or bump bonds are configured to electrically couple the die to the lead frame. A passive circuit element is on a substrate, and the substrate is mounted to the second side of the die. A second set of bond wires and/or bump bonds are configured to electrically couple the passive circuit element to the die. A molding material is configured to encapsulate the passive circuit element, the die, and at least a portion of the lead frame.
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公开(公告)号:US20240021973A1
公开(公告)日:2024-01-18
申请号:US18345400
申请日:2023-06-30
Applicant: TEXAS INSTRUMENTS INCORPORATED
CPC classification number: H01Q1/2283 , H01Q1/48 , H01Q9/0407 , H01L23/5226 , H01L23/3107 , H01L21/56 , H01L2224/48245 , H01L24/48
Abstract: In examples, a semiconductor package comprises a semiconductor substrate including a device side having circuitry formed therein. The package also includes a conductive layer positioned above the semiconductor substrate; a patch antenna coupled to the conductive layer and to the device side of the semiconductor substrate; and a mold compound covering the patch antenna. The mold compound has a relative permittivity ranging from 3.4 to 3.5 and a loss tangent ranging from 0.0025 to 0.013.
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公开(公告)号:US20250126813A1
公开(公告)日:2025-04-17
申请号:US18680535
申请日:2024-05-31
Applicant: TEXAS INSTRUMENTS INCORPORATED
Abstract: In examples, a semiconductor package comprises a semiconductor die, and an inductor coupled to the semiconductor die. The inductor comprises a first metal coil having a first end coupled to the semiconductor die and a second end; a second metal coil vertically spaced from the first metal coil and having a third end coupled to the second end and a fourth end coupled to the semiconductor die; a magnetic mold compound (MMC) between the first and second metal coils, the MMC including conductive ions; and an insulative layer between the first and metal coils.
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公开(公告)号:US20240429216A1
公开(公告)日:2024-12-26
申请号:US18650795
申请日:2024-04-30
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Jie CHEN , Rajen MURUGAN , Sylvester ANKAMAH-KUSI , Harshpreet Singh Phull BAKSHI , Jonathan NOQUIL
IPC: H01L25/16 , H01L21/48 , H01L23/00 , H01L23/13 , H01L23/498
Abstract: An example method includes forming a cavity in a multi-layer substrate of a leadframe. The cavity extends from a first substrate surface of the leadframe into the multi-layer substrate to define a cavity floor spaced from the first substrate surface by a cavity sidewall, and at least one conductive terminal is on the cavity floor. The method also includes placing an inductor module in the cavity, in which the inductor module includes a conductor embedded within a dielectric substrate between spaced apart first and second inductor terminals of the inductor module. The method also includes coupling at least one of the first and second inductor terminals to the at least one conductive terminal on the cavity floor. The method also includes encapsulating the inductor module and at least a portion of the leadframe with a mold compound.
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公开(公告)号:US20250167125A1
公开(公告)日:2025-05-22
申请号:US18920738
申请日:2024-10-18
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Sylvester ANKAMAH-KUSI , Guangxu LI , Rajen Manicon MURUGAN , Usman CHAUDHRY
IPC: H01L23/538 , H01L21/48 , H01L23/00 , H01L23/14 , H01L23/31 , H01L25/00 , H01L25/065
Abstract: In examples, a semiconductor package includes a substrate including a build-up film isolation layer and first and second pre-preg layers contacting opposing lateral sides of the build-up film isolation layer, the first pre-preg layer including a first metallization, and the second pre-preg layer including a second metallization not in physical contact with the first metallization. The package also includes solder mask layers on top and bottom surfaces of the substrate, a first semiconductor die coupled to the first metallization, and a second semiconductor die coupled to the second metallization, the first and second semiconductor dies configured to operate in separate voltage domains. The package also includes a mold compound covering the substrate and the first and second semiconductor dies.
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公开(公告)号:US20250112126A1
公开(公告)日:2025-04-03
申请号:US18478715
申请日:2023-09-29
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Jie CHEN , Sylvester ANKAMAH-KUSI , Rajen Manicon MURUGAN , Yong XIE , Danny Lee BRIJA
IPC: H01L23/495 , H01L23/00 , H01L25/065 , H01L29/16 , H01L29/20 , H01L29/778
Abstract: In examples, a power device comprises a first wide bandgap semiconductor die including a high-side transistor; a second wide bandgap semiconductor die including a low-side transistor; and a conductive device coupled to the first and second wide bandgap semiconductor dies. The conductive device comprises a first layer including a first metal member having fingers at first and second ends of the first metal member, a second metal member having fingers interleaved with fingers of the first metal member at the first end, and a third metal member having fingers interleaved with fingers of the first metal member at the second end. The conductive device also comprises multiple layers in vertical alignment with the first layer, the first, second, and third metal members extending through the multiple layers. The conductive device also comprises a dielectric material covering the first layer and the multiple layers. The power device comprises a connection layer coupling the conductive device to each of the first and second wide bandgap semiconductor dies, with the connection layer including the first, second, and third metal members, and with the first metal member having connection layer fingers at the first and second ends of the first metal member. The second metal member has connection layer fingers interleaved with connection layer fingers of the first metal member at the first end, and the third metal member has connection layer fingers interleaved with connection layer fingers of the first metal member at the second end.
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公开(公告)号:US20240071959A1
公开(公告)日:2024-02-29
申请号:US18345296
申请日:2023-06-30
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Harshpreet Singh Phull BAKSHI , Sylvester ANKAMAH-KUSI , Siraj AKHTAR , Rajen Manicon MURUGAN
IPC: H01L23/64 , H01L21/02 , H01L21/288 , H01L21/3205 , H01L21/56 , H01L21/768 , H01L23/31 , H01L23/498 , H01L25/16
CPC classification number: H01L23/645 , H01L21/022 , H01L21/288 , H01L21/3205 , H01L21/565 , H01L21/76877 , H01L23/3107 , H01L23/49816 , H01L23/49822 , H01L23/49838 , H01L25/16
Abstract: In examples, a semiconductor package comprises a conductive terminal; a semiconductor die including a device side having circuitry formed therein, the device side facing toward the conductive terminal; and a substrate coupled to the conductive terminal and to the device side of the semiconductor die. The substrate includes a first metal layer coupled to first and second vias extending toward and coupled to either the device side of the semiconductor die or the conductive terminal. The substrate includes a second metal layer electrically isolated from the first metal layer by an insulation layer between the first and second metal layers, the second metal layer coupled to a third via extending toward and coupled to either the conductive terminal or the semiconductor die. The first and second metal layers form a Marchand balun.
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