公开(公告)号：US20230275060A1

公开(公告)日：2023-08-31

申请号：US17682194

申请日：2022-02-28

Applicant: Texas Instruments Incorporated

Inventor： Xiaoling Kang ,  Xi Lin Li ,  Zi Qi Wang ,  Huo Yun Duan ,  Xiao Lin Kang

IPC: H01L23/00

CPC classification number: H01L24/48 ,  H01L24/85 ,  H01L2224/48175 ,  H01L2224/48479 ,  H01L2224/48464 ,  H01L2224/85186 ,  H01L2224/85051 ,  H01L24/49 ,  H01L2224/49113 ,  H01L24/73 ,  H01L2224/73265 ,  H01L24/32 ,  H01L2224/32245 ,  H01L23/49555

Abstract: A semiconductor package includes a leadframe including a die pad and a plurality of leads including a first lead, wherein the first lead includes a first ball bond. A semiconductor die having a plurality of bond pads including a first bond pad is on the die pad including a second ball bond on the first bond pad and a stitch bond on the second ball bond. A first wirebond connection is between the first ball bond and the stitch bond.

公开(公告)号：US12283559B2

公开(公告)日：2025-04-22

申请号：US18071288

申请日：2022-11-29

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Lin Zhang ,  Huo Yun Duan ,  Xi Lin Li ,  Chen Xiong ,  Xiao Lin Kang

IPC: H01L23/498 ,  H01L23/00

Abstract: A semiconductor package includes a conductive pad, a semiconductor die with an aluminum bond pad over a dielectric layer of the semiconductor die, a gold bump on the aluminum bond pad, a first intermetallic layer of gold and aluminum between the aluminum bond pad and the gold bump, a copper ball bond on the gold bump, a second intermetallic layer of copper and gold between the copper ball bond and the gold bump, a copper wire extending from the copper ball bond to the conductive pad, a stitch bond between the copper wire and the conductive pad.

公开(公告)号：US20190378814A1

公开(公告)日：2019-12-12

申请号：US16171121

申请日：2018-10-25

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Han Zhong ,  Zi Qi Wang ,  Chen Xiong ,  Yong Qiang Tang ,  Xi Lin Li ,  Xiao Lin Kang

IPC: H01L23/00 ,  H01L21/48 ,  H01L21/56 ,  H01L21/78

Abstract: A method for forming a ball bond for an integrated circuit formed on a semiconductor die includes forming a ball at a first send of a conductive wire inserted in a capillary tool and lowering the capillary tool toward a pad on the semiconductor die positioned on a support surface. The method further includes moving, using a motor, the support surface relative to the capillary tool to thereby bond the ball, without using ultrasound, to the pad and then raising the capillary tool.

公开(公告)号：US20230086535A1

公开(公告)日：2023-03-23

申请号：US18071288

申请日：2022-11-29

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Lin Zhang ,  Huo Yun Duan ,  Xi Lin Li ,  Chen Xiong ,  Xiao Lin Kang

IPC: H01L23/00 ,  H01L23/498

Abstract: A semiconductor package includes a conductive pad, a semiconductor die with an aluminum bond pad over a dielectric layer of the semiconductor die, a gold bump on the aluminum bond pad, a first intermetallic layer of gold and aluminum between the aluminum bond pad and the gold bump, a copper ball bond on the gold bump, a second intermetallic layer of copper and gold between the copper ball bond and the gold bump, a copper wire extending from the copper ball bond to the conductive pad, a stitch bond between the copper wire and the conductive pad.

公开(公告)号：US10692835B2

公开(公告)日：2020-06-23

申请号：US16171121

申请日：2018-10-25

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Han Zhong ,  Zi Qi Wang ,  Chen Xiong ,  Yong Qiang Tang ,  Xi Lin Li ,  Xiao Lin Kang

IPC: H01L21/00 ,  H01L23/00 ,  H01L21/48 ,  H01L21/56 ,  H01L21/78

Abstract: A method for forming a ball bond for an integrated circuit formed on a semiconductor die includes forming a ball at a first send of a conductive wire inserted in a capillary tool and lowering the capillary tool toward a pad on the semiconductor die positioned on a support surface. The method further includes moving, using a motor, the support surface relative to the capillary tool to thereby bond the ball, without using ultrasound, to the pad and then raising the capillary tool.

公开(公告)号：US20240250060A1

公开(公告)日：2024-07-25

申请号：US18158982

申请日：2023-01-24

Applicant: Texas Instruments Incorporated

Inventor： Ye Zhuang ,  Huo Yun Duan ,  Zi Qi Wang ,  Xiao Lin Kang ,  Xiaoling Kang ,  Tingting Yu

IPC: H01L23/00

CPC classification number: H01L24/78 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L2224/32245 ,  H01L2224/48245 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/78304 ,  H01L2224/85181 ,  H01L2224/85947 ,  H01L2924/13091

Abstract: An example semiconductor package comprises a semiconductor die having a top surface, a bond pad formed on the top surface, a bond wire having a first end and a second end, wherein the first end is attached to the bond pad. The semiconductor package having a contact pad, wherein the second end of the wire bond is attached to the contact pad by a stitch bond, the stitch bond having a plateau region formed between a cut end and a ramped portion, wherein a bottom surface of the plateau region forms an attachment to the contact pad.

公开(公告)号：US11515275B2

公开(公告)日：2022-11-29

申请号：US16941701

申请日：2020-07-29

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Lin Zhang ,  Huo Yun Duan ,  Xi Lin Li ,  Chen Xiong ,  Xiao Lin Kang

IPC: H01L23/498 ,  H01L23/00

Abstract: A semiconductor package includes a conductive pad, a semiconductor die with an aluminum bond pad over a dielectric layer of the semiconductor die, a gold bump on the aluminum bond pad, a first intermetallic layer of gold and aluminum between the aluminum bond pad and the gold bump, a copper ball bond on the gold bump, a second intermetallic layer of copper and gold between the copper ball bond and the gold bump, a copper wire extending from the copper ball bond to the conductive pad, a stitch bond between the copper wire and the conductive pad.

公开(公告)号：US20210313291A1

公开(公告)日：2021-10-07

申请号：US16941701

申请日：2020-07-29

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Lin Zhang ,  Huo Yun Duan ,  Xi Lin Li ,  Chen Xiong ,  Xiao Lin Kang

IPC: H01L23/00 ,  H01L23/498

Abstract: A semiconductor package includes a conductive pad, a semiconductor die with an aluminum bond pad over a dielectric layer of the semiconductor die, a gold bump on the aluminum bond pad, a first intermetallic layer of gold and aluminum between the aluminum bond pad and the gold bump, a copper ball bond on the gold bump, a second intermetallic layer of copper and gold between the copper ball bond and the gold bump, a copper wire extending from the copper ball bond to the conductive pad, a stitch bond between the copper wire and the conductive pad.