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1.发明授权公开(公告)号：US10604838B2
公开(公告)日：2020-03-31
申请号：US15575359
申请日：2016-04-19
发明人： Tatsuya Matsumoto , Keisuke Washio
IPC分类号： C23C16/40 , C23C16/455 , C23C16/44
摘要： An apparatus for atomic layer deposition includes a film deposition chamber, a tubular exhaust pipe connecting section mounted to an outer side of an opening section provided in the film deposition chamber, and a tubular exhaust adhesion preventive member located inside the film deposition chamber and inserted into and mounted on the opening section. The exhaust pipe connecting section is provided with an inert-gas supply passage and an inert-gas supply port, both in the connecting section. The exhaust adhesion preventive member is provided with an inert-gas supply passage formed of a gap between each of an inner peripheral surface of the opening section and an inner wall of the film deposition chamber around the opening section, and the adhesion preventive member, and an inert-gas discharge port provided in the inert-gas supply passage, and from which the inert gas flows out into the film deposition chamber.
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公开(公告)号：US12009183B2
公开(公告)日：2024-06-11
申请号：US17149696
申请日：2021-01-14
发明人： Keisuke Washio , Masao Nakata , Tatsuya Matsumoto , Junichi Shida
IPC分类号： H01J37/32 , C23C16/04 , C23C16/40 , C23C16/455 , H01L21/02 , H01L21/31 , H10K50/844 , H10K71/00
CPC分类号： H01J37/32669 , C23C16/042 , C23C16/403 , C23C16/45542 , C23C16/45544 , H01J37/32743 , H01L21/02642 , H01L21/31 , H10K50/844 , H10K71/00 , H01J37/32834 , H01J2237/332
摘要： In a film-forming technology using charged particles, a disturbance in film thickness distribution caused by leakage magnetic field is suppressed. A film-forming method embodies a technological idea of switching generation and stop of a magnetic field during a film-forming operation so as to stop the generation of the magnetic field during a period when plasma is generated and generate the magnetic field during a period when plasma is not generated.
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公开(公告)号：US10519549B2
公开(公告)日：2019-12-31
申请号：US15575360
申请日：2016-04-19
发明人： Tatsuya Matsumoto , Keisuke Washio
IPC分类号： C23C16/40 , C23C16/50 , C23C16/44 , C23C16/455
摘要： An apparatus for plasma atomic layer deposition includes a tubular, insulating injector adhesion preventive member mountable to a gas-introducing opening section from inside a film forming chamber, a tubular, insulating exhaust adhesion preventive member mountable to an exhaust opening section from inside the film forming chamber, and an insulating film forming chamber adhesion preventive member mountable to an inner wall side of the film forming chamber. The injector adhesion preventive member and the exhaust adhesion preventive member are separated from each of a plate electrode and a counter electrode side, and the film forming chamber adhesion preventive member is disposed on each side of the injector adhesion preventive member and the exhaust adhesion preventive member to be separated from each of the plate electrode and the counter electrode side. The apparatus further includes an upper and lower inert-gas supply port that purges inert gas toward inside the film forming chamber.
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公开(公告)号：US11453944B2
公开(公告)日：2022-09-27
申请号：US16324556
申请日：2017-04-24
发明人： Keisuke Washio , Tatsuya Matsumoto
IPC分类号： C23C16/455 , C23C16/458 , H01L21/687 , C23C16/44
摘要： An atomic layer deposition apparatus includes a film-forming container 11 in which a film-forming process is performed, a vertically movable stage 14 configured to hold a substrate 100, a susceptor 50 held on the stage 14 and being configured to hold the substrate 100, and a stage stopper 17 configured to stop rising of the stage 14 and, when in contact with the susceptor 50, partitioning a film-forming space S in which the film-forming process is performed and a transporting space in which transport of the substrate 100 is performed. Further, the susceptor 50 includes an upper susceptor substrate holding portion 52B configured to hold the substrate 100, and an upper susceptor peripheral portion 52A arranged in a periphery of the upper susceptor substrate holding portion 52B, wherein a susceptor deposition prevention member 15 is provided on the upper susceptor peripheral portion 52A.
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公开(公告)号：US11024488B2
公开(公告)日：2021-06-01
申请号：US16490529
申请日：2017-10-31
发明人： Keisuke Washio , Masao Nakata , Tatsuya Matsumoto , Junichi Shida
IPC分类号： H01L21/02 , H01J37/32 , C23C16/04 , C23C16/455 , H01L51/52 , H01L51/56 , C23C16/40 , H01L21/31
摘要： In a film-forming technology using charged particles, a disturbance in film thickness distribution caused by leakage magnetic field is suppressed. A film-forming method embodies a technological idea of switching generation and stop of a magnetic field during a film-forming operation so as to stop the generation of the magnetic field during a period when plasma is generated and generate the magnetic field during a period when plasma is not generated.
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公开(公告)号：US10889893B2
公开(公告)日：2021-01-12
申请号：US16328269
申请日：2017-04-24
发明人： Keisuke Washio , Tatsuya Matsumoto
IPC分类号： C23C16/44 , H01L21/67 , C23C16/455 , H01L21/687 , H01L51/50 , H01L21/02
摘要： An atomic layer deposition apparatus includes: a film-forming container 11 in which a film-forming process is performed; a vertically movable stage 14 provided in the film-forming container 11 and being configured to hold a substrate 100; a stage stopper 17 configured to stop rising of the stage 14 and, when in contact with the stage 14, partitioning a film-forming space S in which the film-forming process is performed and a transporting space in which transport of the substrate 100 is performed; a peripheral stage deposition prevention member 15 covering a peripheral portion of the stage 14; and a stage stopper deposition prevention member 24 provided on the stage stopper 17.
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公开(公告)号：US11127926B2
公开(公告)日：2021-09-21
申请号：US15361444
申请日：2016-11-27
摘要： A method of manufacturing a display device having an organic EL device includes the steps of: forming an organic EL device over a substrate; and forming a protection film so as to cover the organic EL device. The protection film is made of a laminated film of a first insulating film containing Si, a second insulating film containing Al and a third insulating film containing Si. The step of forming the protection film includes the steps of: forming the first insulating film by a plasma CVD method so as to cover the organic EL device; forming the second insulating film over the first insulating film by an ALD method; and forming the third insulating film over the second insulating film by a plasma CVD method.
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公开(公告)号：US10833293B2
公开(公告)日：2020-11-10
申请号：US16490541
申请日：2017-10-31
摘要： A method of manufacturing a display apparatus having an organic EL element includes: a step of forming the organic EL element over a substrate made of a flexible substrate; and a step of forming a protecting film 16 made of an inorganic insulating material so as to cover the organic EL element by using an ALD method. In the step of forming the protecting film 16, the protecting film 16 is formed by alternately performing a step of forming a high-density layer 16H by using an ALD method and a step of forming, by using an ALD method, a low-density layer 16L that has the same constituent element as the high-density layer 16H and has a lower density than the high-density layer 16H. The protecting film 16 has a layered structure made of one or more high-density layers 16H and one or more low-density layers 16L so that the low-density layer 16L and the high-density layer 16H are alternately layered so as to be in contact with each other.
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公开(公告)号：US10508338B2
公开(公告)日：2019-12-17
申请号：US15575357
申请日：2016-04-19
发明人： Tatsuya Matsumoto , Keisuke Washio
IPC分类号： C23C16/40 , C23C16/455 , C23C16/30 , C23C16/44 , C23C16/458
摘要： A device for atomic layer deposition includes: an injector installed to an opening of a film deposition chamber; and an injector adhesion preventive member installed by insertion into the opening, wherein the injector includes an injector raw material gas supply path, an injector reactant gas supply path, and an injector inert gas supply path, the respective paths being partitioned from each other, the injector adhesion preventive member includes an adhesion preventive member raw material gas supply path, an adhesion preventive member reactant gas supply path, and an adhesion preventive member inert gas supply path, the respective paths being partitioned from each other, and the adhesion preventive member inert gas supply path is provided such that the inert gas flows in a clearance between an outer peripheral side of the injector adhesion preventive member and an inner peripheral side of the opening.
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