公开(公告)号：US20210370271A1

公开(公告)日：2021-12-02

申请号：US17304004

申请日：2021-06-11

申请人： THE PENN STATE RESEARCH FOUNDATION ,  SHINSHU UNIVERSITY

发明人： Mauricio Terrones ,  Yu Lei ,  He Liu ,  Kazunori Fujisawa ,  Ann Laura Elias Arriaga ,  Tianyi Zhang ,  Eduardo Cruz-Silva ,  Moronobu Endo ,  Xiaoxing Wang

IPC分类号： B01J21/02 ,  C01B21/064 ,  B01J23/50 ,  B01J37/00 ,  B01J23/89 ,  B01J35/10 ,  B01J35/02 ,  B01J37/04 ,  B01J37/06 ,  C25B11/097 ,  C25B1/02

摘要： A group of reductive 2D materials (R2D) with extended reactive vacancies and a method for making the R2D with extended reactive vacancies are provided, especially the example of the reductive boron nitride (RBN). To create defects such as vacancies, boron nitride (BN) powders are milled at cryogenic temperatures. Vacancies are produced by milling, and the vacancies can be used to reduce various metal nanostructures on RBN. Due to the thermal stability of the RBN and the enhanced catalytic performance of metal nanostructures, RBN-metals can be used for different catalysts, including electrochemical catalysts and high temperature catalysts.

公开(公告)号：US11958038B2

公开(公告)日：2024-04-16

申请号：US17304004

申请日：2021-06-11

申请人： THE PENN STATE RESEARCH FOUNDATION ,  SHINSHU UNIVERSITY

发明人： Mauricio Terrones ,  Yu Lei ,  He Liu ,  Kazunori Fujisawa ,  Ana Laura Elias Arriaga ,  Tianyi Zhang ,  Rodolfo Cruz-Silva ,  Morinobu Endo ,  Xiaoxing Wang ,  Cynthia Guerrero-Bermea

IPC分类号： C01B21/064 ,  B01J21/02 ,  B01J23/50 ,  B01J23/89 ,  B01J35/02 ,  B01J35/10 ,  B01J37/00 ,  B01J37/04 ,  B01J37/06 ,  C25B1/02 ,  C25B11/097

CPC分类号： B01J21/02 ,  B01J23/50 ,  B01J23/8926 ,  B01J35/026 ,  B01J35/1014 ,  B01J37/0063 ,  B01J37/009 ,  B01J37/04 ,  B01J37/06 ,  C01B21/0648 ,  C25B1/02 ,  C25B11/097 ,  C01P2002/72 ,  C01P2002/82 ,  C01P2002/84 ,  C01P2004/04 ,  C01P2006/37 ,  C01P2006/40

摘要： A group of reductive 2D materials (R2D) with extended reactive vacancies and a method for making the R2D with extended reactive vacancies are provided, especially the example of the reductive boron nitride (RBN). To create defects such as vacancies, boron nitride (BN) powders are milled at cryogenic temperatures. Vacancies are produced by milling, and the vacancies can be used to reduce various metal nanostructures on RBN. Due to the thermal stability of the RBN and the enhanced catalytic performance of metal nanostructures, RBN-metals can be used for different catalysts, including electrochemical catalysts and high temperature catalysts.

公开(公告)号：US20240347722A1

公开(公告)日：2024-10-17

申请号：US18625259

申请日：2024-04-03

申请人： The Penn State Research Foundation

发明人： Mauricio Terrones ,  Yu Lei ,  Venkata Sai Avvaru ,  Kazunori Fujisawa ,  George Bepete ,  Vinodkumar Etacheri

IPC分类号： H01M4/58 ,  C01B21/064 ,  H01G11/50 ,  H01M4/02 ,  H01M10/0525 ,  H01M10/054 ,  H01M10/42 ,  H01M50/383

CPC分类号： H01M4/58 ,  H01M10/0525 ,  H01M10/054 ,  H01M10/4235 ,  H01M50/383 ,  C01B21/064 ,  H01G11/50 ,  H01M2004/027

摘要： Embodiments can relate to a method for defect engineering boron nitride (BN). The method can involve forming reactive BN (RBN) by breaking B—N bonds, and activation of the RBN. Forming RBN can involve cryo-milling, ball-milling, sonication, focused ion/electron beam irradiation, detonation, chemical treatment, and/or thermal treatment in limited oxygen. Activation of the RBN can involve chemical activation and/or electrochemical activation. The defect engineered BN can be used to form or be a component of an anode electrode. The anode electrode can include an electrically conductive member including a microstructure layer. The microstructure layer can be made of BN having a surface defect configured to provide a diffusion independent pseudocapacitive ion storage mechanism.