公开(公告)号：US09490744B2

公开(公告)日：2016-11-08

申请号：US14560788

申请日：2014-12-04

Applicant: THE REGENTS OF THE UNIVERSITY OF MICHIGAN

Inventor： Taekwang Jang ,  Dennis Michael Sylvester ,  David Theodore Blaauw

IPC: H03L7/00 ,  H03B5/12 ,  H03L7/099 ,  H03L1/00 ,  H03L7/18 ,  H03L7/187 ,  H03L7/193

CPC classification number: H03B5/1265 ,  H03B5/1271 ,  H03L1/00 ,  H03L7/00 ,  H03L7/099 ,  H03L7/18 ,  H03L7/187 ,  H03L7/193

Abstract: Oscillator regulation circuitry is provided for regulating a frequency of an output signal generated by an oscillator. Oscillator regulation circuitry has frequency sensing circuitry for sensing the frequency of the output signal and generating a first signal depending on the frequency, and control circuitry which generates the oscillator control signal based on the comparison between the first signal and a non-oscillating reference signal. The frequency sensing circuitry includes at least one switched capacitor. This approach provides improved noise reduction, less sensitivity to process, temperature and voltage variations, and a more linear scaling of the frequency with the reference signal, compared to previous techniques.

Abstract translation: 提供振荡器调节电路用于调节由振荡器产生的输出信号的频率。 振荡器调节电路具有用于感测输出信号的频率并根据频率产生第一信号的频率感测电路，以及基于第一信号和非振荡参考信号之间的比较产生振荡器控制信号的控制电路。 频率感测电路包括至少一个开关电容器。 与以前的技术相比，该方法提供了改进的噪声降低，对过程的敏感性，温度和电压变化以及频率与参考信号的更线性缩放。

公开(公告)号：US09639107B2

公开(公告)日：2017-05-02

申请号：US14662615

申请日：2015-03-19

Applicant: The Regents of The University of Michigan

Inventor： David T. Blaauw ,  Dennis Sylvester ,  Myungjoon Choi ,  Inhee Lee ,  Taekwang Jang

IPC: G05F3/16 ,  G05F1/46 ,  G05F1/575 ,  G05F3/24

CPC classification number: G05F3/16 ,  G05F1/468 ,  G05F1/575 ,  G05F3/242

Abstract: A temperature insensitive sub-nA current reference is presented with pA-range power overhead. The main concept is to linearly reduce the gate voltage of a sub-threshold-biased MOSFET as temperature increases, in order to compensate for exponential dependence of drain current on temperature. For example, a MOSFET-only, 20 pA, 780 ppm/° C. current reference that consumes 23 pW is disclosed, marking the lowest reported power among current references. The circuit exploits sub-threshold-biased MOSFETs and a complementary-to-absolute temperature (CTAT) gate voltage to compensate for temperature dependency. The design shows high immunity to supply voltage of 0.58%/V and a load sensitivity of 0.25%/V.

公开(公告)号：US11911128B2

公开(公告)日：2024-02-27

申请号：US17173976

申请日：2021-02-11

Applicant: THE REGENTS OF THE UNIVERSITY OF MICHIGAN

Inventor： David T. Blaauw ,  Jamie Phillips ,  Cynthia Anne Chestek ,  Taekwang Jang ,  Hun-Seok Kim ,  Dennis Sylvester ,  Jongyup Lim ,  Eunseong Moon ,  Michael Barrow ,  Samuel Nason ,  Julianna Richie ,  Paras Patel

IPC: A61B5/00 ,  H04B10/80 ,  H04B10/114 ,  A61B5/37 ,  A61B5/384

CPC classification number: A61B5/0017 ,  A61B5/0006 ,  A61B5/0031 ,  A61B5/37 ,  A61B5/384 ,  H04B10/114 ,  H04B10/80 ,  A61B2560/0219

Abstract: A mote includes an optical receiver that wirelessly receives a power and data signal in form of NIR light energy within a patient and converts the NIR light energy to an electrical signal having a supply voltage. A control module supplies the supply voltage to power devices of the mote. A clock generation circuit locks onto a target clock frequency based on the power and data signal and generates clock signals. A data recovery circuit sets parameters of one of the devices based on the power and data signal and a first clock signal. An amplifier amplifies a neuron signal detected via an electrode inserted in tissue of the patient. A chip identifier module, based on a second clock signal, generates a recorded data signal based on a mote chip identifier and the neuron signal. A driver transmits the recorded data signal via a LED or a RF transmitter.

公开(公告)号：US20150268689A1

公开(公告)日：2015-09-24

申请号：US14662615

申请日：2015-03-19

Applicant: The Regents of The University of Michigan

Inventor： David T. Blaauw ,  Dennis Sylvester ,  Myungjoon Choi ,  Inhee Lee ,  Taekwang Jang

IPC: G05F3/16

CPC classification number: G05F3/16 ,  G05F1/468 ,  G05F1/575 ,  G05F3/242

Abstract: A temperature insensitive sub-nA current reference is presented with pA-range power overhead. The main concept is to linearly reduce the gate voltage of a sub-threshold-biased MOSFET as temperature increases, in order to compensate for exponential dependence of drain current on temperature. For example, a MOSFET-only, 20 pA, 780 ppm/° C. current reference that consumes 23 pW is disclosed, marking the lowest reported power among current references. The circuit exploits sub-threshold-biased MOSFETs and a complementary-to-absolute temperature (CTAT) gate voltage to compensate for temperature dependency. The design shows high immunity to supply voltage of 0.58%/V and a load sensitivity of 0.25%/V.

Abstract translation: 温度不敏感的sub-nA电流参考值以pA范围功率开销呈现。 主要的概念是随着温度升高线性降低亚阈值偏置MOSFET的栅极电压，以补偿漏极电流对温度的指数依赖性。 例如，公开了仅消耗23 pW的仅MOSFET，20 pA，780 ppm /°C电流参考，标记了当前参考文献中报告的最低功率。 该电路利用亚阈值偏置MOSFET和互补绝对温度（CTAT）栅极电压来补偿温度依赖性。 该设计具有高抗电荷性，电源电压为0.58％/ V，负载灵敏度为0.25％/ V。