MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY DEVICE

    公开(公告)号:US20170222135A1

    公开(公告)日:2017-08-03

    申请号:US15502442

    申请日:2015-07-29

    Abstract: A magnetoresistance effect element (100) includes a heavy metal layer (11) that includes a heavy metal and that is formed to extend in a first direction, a recording layer (12) that includes a ferromagnetic material and that is provided adjacent to the heavy metal layer (11), a barrier layer (13) that includes an insulating material and that is provided on the recording layer (12) with being adjacent to a surface of the recording layer (12) opposite to the heavy metal layer (11), and a reference layer (14) that includes a ferromagnetic material and that is provided adjacent to a surface of the barrier layer (13), the surface being opposite to the recording layer (12). The direction of the magnetization of the reference layer (14) has a component substantially fixed in the first direction, and the direction of the magnetization of the recording layer (12) has a component variable in the first direction. A current having a direction same as the first direction is introduced to the heavy metal layer (11) to thereby enable the magnetization of the recording layer (12) to be inverted.

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