公开(公告)号：US20170011886A1

公开(公告)日：2017-01-12

申请号：US15203982

申请日：2016-07-07

Applicant: TOKYO ELECTRON LIMITED ,  TOHOKU TECHNO ARCH CO., LTD

Inventor： Toshihisa NOZAWA ,  Kazuki MOYAMA ,  Ryo MIYAMA ,  Seiji SAMUKAWA

IPC: H01J37/32 ,  C23C16/50

CPC classification number: C23C16/50 ,  C23C16/4401 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32467

Abstract: Disclosed is a plasma processing apparatus including: a processing container; and a partition plate made of an insulating material, having a plurality of openings, and configured to partition an inside of the processing container into a plasma generating chamber and a processing chamber. A first conductive member made of a conductive material is provided on a surface of the processing chamber side of the partition plate, and the first conductive member is applied with at least one of an AC voltage, and a DC voltage of a polarity that is opposite to a polarity of charged particles guided from the plasma generating chamber into the processing chamber through each of the openings.

Abstract translation: 一种等离子体处理装置，包括：处理容器; 以及由绝缘材料制成的隔板，具有多个开口，并被构造成将处理容器的内部分隔成等离子体产生室和处理室。 在隔板的处理室侧的表面上设置由导电材料制成的第一导电构件，并且向第一导电构件施加交流电压和极性相反的直流电压中的至少一个 到通过每个开口从等离子体产生室引导到处理室中的带电粒子的极性。

公开(公告)号：US20170125261A1

公开(公告)日：2017-05-04

申请号：US15333323

申请日：2016-10-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ryo MIYAMA ,  Kazuki MOYAMA ,  Toshihisa NOZAWA

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/02

CPC classification number: H01L21/31122 ,  H01J37/3244 ,  H01J2237/3345 ,  H01L21/02244 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32139 ,  H01L21/67069 ,  H01L43/12

Abstract: Disclosed is a method of anisotropically etching a transition metal film using a substrate processing apparatus including at least one processing container configured to perform a processing on a workpiece including the transition metal film. The method includes an oxidation step of introducing a first gas containing an oxygen ion into the processing container and irradiating the transition metal film with the oxygen ion to oxidize a transition metal of the transition metal film, thereby forming a metal oxide layer; and a complexation/etching step of introducing a second gas for complexation of the metal oxide layer into the processing container and forming a metal complex in the metal oxide layer, thereby performing an etching.

公开(公告)号：US20170229332A1

公开(公告)日：2017-08-10

申请号：US15501235

申请日：2015-07-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ryo MIYAMA ,  Naoto WATANABE ,  Koichiro NAKAMURA

IPC: H01L21/67 ,  H05H1/46 ,  H05H1/00 ,  H01L21/66 ,  H01L21/3065

CPC classification number: H01J37/32972 ,  H01J37/32935

Abstract: A method and apparatus for determining a stability of plasma in a plasma processing apparatus for performing a plasma processing by converting into plasma a processing gas supplied into a processing container. The method includes: detecting a light emission intensity of the plasma in the processing container while the plasma is generated in the processing container; generating a first function representing a relationship between time and the light emission intensity from a detection result of the light emission intensity; differentiating the first function with time to calculate a differential value, and generating a second function from a relationship between an absolute value of the differential value and time; and integrating the second function with time to calculate an integral value, and determining a stability of the plasma based on the calculated integral value. A related apparatus is also provided.

公开(公告)号：US20160211120A1

公开(公告)日：2016-07-21

申请号：US15000228

申请日：2016-01-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ryo MIYAMA

IPC: H01J37/32

CPC classification number: H01J37/32266 ,  H01J37/32256 ,  H01J37/32972 ,  H01J37/3299

Abstract: Disclosed is a method for presetting a tuner that matches a power required for plasma emission in a plasma processing apparatus. The method includes: obtaining a relationship of a time lapse from power supply, an emission intensity of plasma, and a setting position of the tuner by emitting plasma; differentiating the emission intensity by time to calculate a time when an increase rate of the emission intensity becomes maximum; and setting the setting position of the tuner at a time, which is obtained by subtracting a time required from the setting of the tuner until the setting is reflected on the emission intensity from the time when the increase rate of the emission intensity becomes maximum, as a preset position.

Abstract translation: 公开了一种用于预设与等离子体处理装置中的等离子体发射所需的功率匹配的调谐器的方法。 该方法包括：通过发射等离子体获得从电源的时间流逝，等离子体的发射强度和调谐器的设置位置的关系; 通过时间来区分发射强度，以计算发射强度的增加率变得最大的时间; 并且通过从发射强度的增加率变为最大的时间减去从调谐器的设置所需的时间直到设置被反映在发光强度上而获得的调谐器的设置位置为 预设位置。