SUBSTRATE SUPPORT AND SUBSTRATE PROCESSING APPARATUS

    公开(公告)号:US20250069862A1

    公开(公告)日:2025-02-27

    申请号:US18937082

    申请日:2024-11-05

    Abstract: A substrate support includes a base, a support portion, a first pin member, a second pin member and a driving unit. The base has a first surface on which an object to be supported is placed, a second surface opposite to the first surface, and a first through-hole. The support portion has a third surface in contact with the second surface, a fourth surface opposite to the third surface, and a second through-hole. The first pin member is stored in the first through-hole and a second pin member is stored in the second through-hole. The first through-hole is larger on the second surface side than on the first surface side, and/or the second through-hole is larger on the third surface side than on the fourth surface side.

    PLASMA PROCESSING APPARATUS AND UPPER ELECTRODE ASSEMBLY
    2.
    发明申请
    PLASMA PROCESSING APPARATUS AND UPPER ELECTRODE ASSEMBLY 有权
    等离子体处理装置和上电极组件

    公开(公告)号:US20160013028A1

    公开(公告)日:2016-01-14

    申请号:US14792755

    申请日:2015-07-07

    Abstract: A plasma processing apparatus includes supporting members, connecting members, a rotation member and fixing members. Each of the supporting members is partially disposed in a disc-shaped cooling plate and configured to support an upper electrode provided below the cooling plate. Each of the connecting members is partially disposed in the cooling plate and extends in a diametrical direction of the cooling plate to be engaged with the corresponding supporting member. The rotation member is provided to surround an outer periphery of the cooling plate and has recesses formed to face the cooling plate and engaged with the corresponding connecting members. Each of the fixing members is configured to lift and fix the upper electrode to the cooling plate by applying a torque to the corresponding connecting member.

    Abstract translation: 等离子体处理装置包括支撑构件,连接构件,旋转构件和固定构件。 每个支撑构件部分地设置在盘形冷却板中并且构造成支撑设置在冷却板下方的上电极。 每个连接构件部分地设置在冷却板中,并且沿着冷却板的直径方向延伸以与相应的支撑构件接合。 旋转构件被设置为围绕冷却板的外周,并且具有形成为面向冷却板并与相应的连接构件接合的凹部。 每个固定构件构造成通过向相应的连接构件施加扭矩来将上部电极提升并固定到冷却板。

    SUBSTRATE PROCESSING SYSTEM AND TRANSFER METHOD

    公开(公告)号:US20250054793A1

    公开(公告)日:2025-02-13

    申请号:US18927144

    申请日:2024-10-25

    Abstract: A substrate processing system includes a vacuum transfer module, a substrate processing module connected to the vacuum transfer module and including: a substrate processing chamber; a stage disposed in the substrate processing chamber; a first ring and a second ring disposed so as to surround a substrate placed on the stage; and a lifter configured to vertically move the first ring and the second ring with respect to the stage; a storage module connected to the vacuum transfer module and including a vertically movable ring storage; and a controller configured to selectively execute a simultaneous transfer mode in which the first ring and the second ring are simultaneously transferred between the substrate processing module and the storage module, and a sole transfer mode in which the second ring is solely transferred between the substrate processing module and the storage module.

    PLASMA PROCESSING SYSTEM AND EDGE RING REPLACEMENT METHOD

    公开(公告)号:US20210280395A1

    公开(公告)日:2021-09-09

    申请号:US17190447

    申请日:2021-03-03

    Abstract: A plasma processing system includes a control device. The control device executes raising a lifter to deliver a cover ring supporting an edge ring to the lifter; moving a jig supported by a holder to a space between the cover ring and a substrate support surface/an annular support surface; raising a different lifter to deliver the jig to the different lifter; extracting the holder, and then moving the lifter and the different lifter relatively to deliver the edge ring to the jig; lowering only the lifter to deliver the cover ring to the annular member support surface; moving the holder to a space between the cover ring and the jig, and then lowering the different lifter to deliver the jig to the holder; and extracting the holder from the processing chamber to transfer the jig supporting the edge ring from the processing chamber.

    PLASMA PROCESSING APPARATUS
    5.
    发明申请

    公开(公告)号:US20240371609A1

    公开(公告)日:2024-11-07

    申请号:US18773597

    申请日:2024-07-16

    Abstract: A plasma processing apparatus of the present disclosure includes a chamber, a shutter, and a contact portion. The chamber has an opening in a sidewall thereof so as to carry a wafer W into the chamber through the opening, and performs therein a predetermined processing on the wafer W by plasma of a processing gas supplied thereinto. The shutter opens or closes the opening by moving along the sidewall of the chamber. The contact portion is formed of a conductive material, and is not in contact with the shutter while the shutter is moving. When the shutter is in the position for closing the opening, the contact portion is displaced in a direction different from the direction of movement of the shutter to come into contact with the shutter.

    PLASMA PROCESSING SYSTEM AND METHOD OF MOUNTING ANNULAR MEMBER

    公开(公告)号:US20220310366A1

    公开(公告)日:2022-09-29

    申请号:US17701673

    申请日:2022-03-23

    Inventor: Shin MATSUURA

    Abstract: A plasma processing system is provided. The system comprises a plasma processing apparatus, a transfer apparatus connected to the plasma processing apparatus, and a controler. The plasma processing apparatus includes a substrate support including a support unit for a substrate as well as an annular member disposed to surround the substrate. The substrate support includes a plurality of insertion holes passing through the support unit, lifters to elevate/lower the annular member through the insertion holes and a temperature adjustment mechanism for adjusting a temperature of the support unit. The transfer apparatus includes a transfer mechanism for transferring the annular member to the substrate support. The annual member has includes concave portions in its bottom surface, into which upper end the lifters are fitted.

    PIN CONTROL METHOD AND SUBSTRATE PROCESSING APPARATUS

    公开(公告)号:US20190287844A1

    公开(公告)日:2019-09-19

    申请号:US16427874

    申请日:2019-05-31

    Abstract: A substrate processing apparatus includes a processing container; a placement table; a plurality of pins provided on the placement table configured to perform delivery of the substrate; a plurality of drivers configured to vertically drive the plurality of pins, respectively; a plurality of measuring devices each including an encoder configured to measure height positions of the plurality of pins, respectively. The substrate processing apparatus also includes a controller configured to: measure the height positions of the plurality of pins; select a reference pin; estimate a reference height position; calculate an adjustment speed for making the height positions of the pins other than the reference pin match with the estimated reference height position; and control the drivers, which drive the other pins, to adjust driving speeds of the other pins to an adjustment speed.

    PLASMA PROCESSING SYSTEM AND EDGE RING REPLACEMENT METHOD

    公开(公告)号:US20240234102A9

    公开(公告)日:2024-07-11

    申请号:US18398162

    申请日:2023-12-28

    CPC classification number: H01J37/32642 H01J37/32715 H01L21/68742

    Abstract: A plasma processing system includes a control device. The control device executes raising a lifter to deliver a cover ring supporting an edge ring to the lifter; moving a jig supported by a holder to a space between the cover ring and a substrate support surface/an annular support surface; raising a different lifter to deliver the jig to the different lifter; extracting the holder, and then moving the lifter and the different lifter relatively to deliver the edge ring to the jig; lowering only the lifter to deliver the cover ring to the annular member support surface; moving the holder to a space between the cover ring and the jig, and then lowering the different lifter to deliver the jig to the holder; and extracting the holder from the processing chamber to transfer the jig supporting the edge ring from the processing chamber.

    PLASMA PROCESSING SYSTEM AND EDGE RING REPLACEMENT METHOD

    公开(公告)号:US20240136158A1

    公开(公告)日:2024-04-25

    申请号:US18398162

    申请日:2023-12-28

    CPC classification number: H01J37/32642 H01J37/32715 H01L21/68742

    Abstract: A plasma processing system includes a control device. The control device executes raising a lifter to deliver a cover ring supporting an edge ring to the lifter; moving a jig supported by a holder to a space between the cover ring and a substrate support surface/an annular support surface; raising a different lifter to deliver the jig to the different lifter; extracting the holder, and then moving the lifter and the different lifter relatively to deliver the edge ring to the jig; lowering only the lifter to deliver the cover ring to the annular member support surface; moving the holder to a space between the cover ring and the jig, and then lowering the different lifter to deliver the jig to the holder; and extracting the holder from the processing chamber to transfer the jig supporting the edge ring from the processing chamber.

    SUBSTRATE SUPPORT AND SUBSTRATE PROCESSING APPARATUS

    公开(公告)号:US20220122816A1

    公开(公告)日:2022-04-21

    申请号:US17504523

    申请日:2021-10-19

    Abstract: A substrate support includes a base, a support portion, a first pin member, a second pin member and a driving unit. The base has a first surface on which an object to be supported is placed, a second surface opposite to the first surface, and a first through-hole. The support portion has a third surface in contact with the second surface, a fourth surface opposite to the third surface, and a second through-hole. The first pin member is stored in the first through-hole and a second pin member is stored in the second through-hole. The first through-hole is larger on the second surface side than on the first surface side, and/or the second through-hole is larger on the third surface side than on the fourth surface side.

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