公开(公告)号：US20220037124A1

公开(公告)日：2022-02-03

申请号：US17388613

申请日：2021-07-29

申请人： TOKYO ELECTRON LIMITED

发明人： Satoshi ITOH ,  Hiroyuki IKUTA ,  Yoshiyuki KONDO ,  Hideki YUASA ,  Soudai EMORI

IPC分类号： H01J37/32 ,  H01L21/02 ,  C23C16/511 ,  C23C16/509

摘要： A plasma processing apparatus for generating plasma from a processing gas using microwaves and performing plasma processing on a substrate is provided. The apparatus includes a processing chamber having a substrate support on which the substrate is placed; a plurality of microwave radiation units arranged at a central portion and an outer peripheral portion of a ceiling wall of the processing chamber and configured to radiate microwaves; and a controller configured to complete microwave radiation from the microwave radiation unit in the central portion upon completion of plasma processing of the substrate and then complete microwave radiation from the microwave radiation units in the outer peripheral portion.

公开(公告)号：US20220262631A1

公开(公告)日：2022-08-18

申请号：US17176446

申请日：2021-02-16

申请人： Tokyo Electron Limited

发明人： Satoshi ITOH ,  Norifumi KOHAMA ,  Soudai EMORI ,  Nathan IP

IPC分类号： H01L21/02 ,  H01L21/66 ,  H01J37/32 ,  C23C16/50 ,  C23C16/34 ,  C23C16/52

摘要： A plasma processing method that is executed by a plasma processing apparatus including a processing container containing a target substrate, a plurality of plasma sources, and a gas supply apparatus for supplying gas includes: supplying the gas from the gas supply apparatus into the processing container; individually controlling intensity of power introduced from each of the plurality of plasma sources into the processing container; and generating plasma of the gas by the intensity of the power introduced from each of the plurality of plasma sources and depositing a desired film on a second surface of the target substrate that is an opposite surface of a first surface of the target substrate so as to apply desired film stress to a film on the first surface.