公开(公告)号：US12221693B2

公开(公告)日：2025-02-11

申请号：US18096217

申请日：2023-01-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takuya Kawaguchi ,  Takanobu Hotta ,  Hideaki Yamasaki

IPC: C23C16/44 ,  C23C16/06 ,  C23C16/34

Abstract: There is provided a stress reducing method comprising: preparing a film forming apparatus configured to form a tungsten film on a substrate in a chamber by supplying a tungsten raw material gas and a reducing gas into the chamber; and making at least a part of a tungsten film deposited on an in-chamber component into a chlorine-containing tungsten film whose film stress is reduced by adjusting a chlorine concentration, when performing pre-coating in the chamber and/or when forming the tungsten film on the substrate, using the tungsten raw material gas and the reducing gas.

公开(公告)号：US12188125B2

公开(公告)日：2025-01-07

申请号：US17805062

申请日：2022-06-02

Applicant: Tokyo Electron Limited

Inventor： Takanobu Hotta ,  Takuya Kawaguchi ,  Hideaki Yamasaki ,  Toshio Takagi ,  Takashi Kakegawa

IPC: C23C16/455 ,  C23C16/44

Abstract: A showerhead includes a shower plate, a base member in which a gas flow passage is provided, the base member fixing the shower plate, a plurality of gas supply members disposed in a gas diffusion space and connected to the gas flow passage, the gas diffusion space being formed between the shower plate and the base member, and a flow adjusting plate disposed in the gas diffusion space, the flow adjusting plate being disposed on an outer periphery on an outer side from the plurality of gas supply members.

公开(公告)号：US12227843B2

公开(公告)日：2025-02-18

申请号：US18096365

申请日：2023-01-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takuya Kawaguchi ,  Takanobu Hotta ,  Hideaki Yamasaki

IPC: C23C16/455 ,  C23C16/02 ,  C23C16/08

Abstract: There is provided a film forming method for forming a tungsten film, comprising: preparing a substrate; and forming a tungsten film on the substrate. A chlorine-containing tungsten film whose film stress is adjusted by chlorine concentration in the film is formed as at least a part of the tungsten film.

公开(公告)号：US11873556B2

公开(公告)日：2024-01-16

申请号：US17229799

申请日：2021-04-13

Applicant: Tokyo Electron Limited

Inventor： Tomohisa Kimoto ,  Noriyuki Watanabe ,  Kensaku Narushima ,  Kouichi Sekido ,  Takuya Kawaguchi

IPC: G05D7/06 ,  G05D23/12 ,  H01L21/67 ,  F16K21/00 ,  C23C16/448 ,  C23C16/44 ,  C23C16/52 ,  C23C16/455 ,  G05D23/20 ,  F16K24/04

CPC classification number: C23C16/448 ,  C23C16/4412 ,  C23C16/45544 ,  C23C16/45561 ,  C23C16/52 ,  F16K24/04 ,  G05D7/0629 ,  G05D23/12 ,  G05D23/2037 ,  H01L21/67017 ,  F16K21/00

Abstract: A raw material supply apparatus includes: a raw material supply path through which a raw material gas is supplied into a processing container; a valve provided in the raw material supply path; a pressure sensor configured to detect an internal pressure of the raw material supply path; a raw material exhaust path connected to the raw material supply path and through which the raw material gas in the raw material supply path is exhausted; an opening degree adjustment mechanism provided in the raw material exhaust path and configured to control the internal pressure of the raw material supply path based on an adjustment of an opening degree of the opening degree adjustment mechanism; and a controller configured to perform the adjustment of the opening degree of the opening degree adjustment mechanism based on a value detected by the pressure sensor.