公开(公告)号：US12188125B2

公开(公告)日：2025-01-07

申请号：US17805062

申请日：2022-06-02

Applicant: Tokyo Electron Limited

Inventor： Takanobu Hotta ,  Takuya Kawaguchi ,  Hideaki Yamasaki ,  Toshio Takagi ,  Takashi Kakegawa

IPC: C23C16/455 ,  C23C16/44

Abstract: A showerhead includes a shower plate, a base member in which a gas flow passage is provided, the base member fixing the shower plate, a plurality of gas supply members disposed in a gas diffusion space and connected to the gas flow passage, the gas diffusion space being formed between the shower plate and the base member, and a flow adjusting plate disposed in the gas diffusion space, the flow adjusting plate being disposed on an outer periphery on an outer side from the plurality of gas supply members.

公开(公告)号：US11732357B2

公开(公告)日：2023-08-22

申请号：US16892766

申请日：2020-06-04

Applicant: Tokyo Electron Limited

Inventor： Tsuyoshi Takahashi ,  Mitsuhiro Okada ,  Yasushi Fujii ,  Yu Nunoshige ,  Shinji Kawasaki ,  Hirotaka Kuwada ,  Toshio Takagi

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  C23C16/44

CPC classification number: C23C16/45544 ,  C23C16/4408 ,  C23C16/4554 ,  C23C16/4582 ,  C23C16/45527 ,  C23C16/45557 ,  C23C16/52

Abstract: A substrate processing method in substrate processing apparatus comprises repeating cycle including: supplying source gas into process container causing the source gas to be adsorbed to substrate; exhausting excess source gas from the process container; supplying reaction gas into the process container causing the reaction gas to react with the source gas; and exhausting excess reaction gas, wherein at least one of a gap width between placement stage and member forming processing space between the member and the stage and degree of opening of pressure adjustment valve in at least one of the supplying the source gas and the supplying the reaction gas is smaller than at least one of a gap width between the stage and the member and the degree of opening of the pressure adjustment valve in at least one of the exhausting the excess source gas and the exhausting the excess reaction gas, respectively.

公开(公告)号：US09885114B2

公开(公告)日：2018-02-06

申请号：US14659121

申请日：2015-03-16

Applicant: Tokyo Electron Limited

Inventor： Tetsuya Saitou ,  Tomohiro Oota ,  Toshio Takagi

IPC: C23F1/00 ,  H01L21/306 ,  C23C16/455 ,  C23C16/34 ,  C23C16/44 ,  C23C16/458 ,  C23C16/46

CPC classification number: C23C16/45565 ,  C23C16/34 ,  C23C16/4412 ,  C23C16/45544 ,  C23C16/45574 ,  C23C16/458 ,  C23C16/46

Abstract: A film forming apparatus for performing a film forming process by sequentially supplying a plurality of reactant gases to a substrate and supplying a replacement gas includes a mounting table configured to mount thereon a substrate, and a shower head having a flat surface facing the mounting table and a plurality of gas supply opening. An annular protrusion is provided at the shower head to form a gap between the annular protrusion and a top surface of the mounting table. A plurality of gas supply units is provided at a ceiling portion at an upper side of the shower head. Each gas supply unit has gas discharge openings formed along a circumferential direction. The diffusion space is disposed such that an outer periphery of the diffusion space is located at an inner side of an outer periphery of the substrate mounted on the mounting table in a plan view.