公开(公告)号：US20160086814A1

公开(公告)日：2016-03-24

申请号：US14784962

申请日：2014-03-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Nobuhiro TAKAHASHI ,  Tetsuro TAKAHASHI ,  Shuji MORIYA ,  Masashi MATSUMOTO ,  Junichiro MATSUNAGA

IPC: H01L21/311

CPC classification number: H01L21/31116

Abstract: An etching method includes loading a target substrate W into a chamber 40, the target substrate W having a silicon nitride film formed thereon and at least one of a polysilicon film and a silicon oxide film formed adjacent to the silicon nitride film; supplying a fluorine (F)-containing gas and an O2 gas into the chamber 40, while at least the O2 gas is excited; and selectively etching the silicon nitride film with respect to at least one of the polysilicon film and the silicon oxide film using the F-containing gas and the O2 gas.

Abstract translation: 蚀刻方法包括将目标基板W装载到室40中，其上形成有氮化硅膜的目标基板W和与氮化硅膜相邻形成的多晶硅膜和氧化硅膜中的至少一个; 至少将O2气体激发，将含氟（F）的气体和O 2气体供给到室40中; 并且使用含F气体和O 2气体，相对于至少一个多晶硅膜和氧化硅膜选择性地蚀刻氮化硅膜。

公开(公告)号：US20180369881A1

公开(公告)日：2018-12-27

申请号：US15779894

申请日：2016-10-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yukimasa SAITO ,  Toshiki HINATA ,  Kazuya DOBASHI ,  Kyoko IKEDA ,  Shuji MORIYA

IPC: B08B9/00 ,  H01L21/67 ,  H01L21/687 ,  H01L21/02

CPC classification number: B08B9/00 ,  B08B5/02 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45563 ,  C23C16/45589 ,  H01L21/02057 ,  H01L21/67028 ,  H01L21/68764

Abstract: According to the present invention, a substrate processing apparatus has a chamber (1), a stage (4) for holding a substrate (W) to be processed in the chamber (1), and a nozzle part (13) from which a gas cluster is blasted onto the substrate (W) to be processed, and has a function for processing the substrate (W) to be processed by the gas cluster. Cleaning of the inside of the chamber (1) is performed by: placing a prescribed reflecting member (dW, 60) in the chamber (1), blasting a gas cluster (C) onto the reflecting member (dW, 60), and applying the gas-cluster flow reflected by the reflecting member (dW, 60) onto a wall section of the chamber (1) to remove particles (P) adhered to the wall section of the chamber (1).

公开(公告)号：US20180355465A1

公开(公告)日：2018-12-13

申请号：US15781242

申请日：2016-10-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yukimasa SAITO ,  Toshiki HINATA ,  Kazuya DOBASHI ,  Kyoko IKEDA ,  Shuji MORIYA

IPC: C23C14/02 ,  C23C16/02 ,  H01L21/304 ,  C23C14/56 ,  C23C14/50 ,  H01L21/687 ,  H01L21/02

CPC classification number: C23C14/022 ,  C23C14/02 ,  C23C14/505 ,  C23C14/564 ,  C23C16/02 ,  H01L21/02041 ,  H01L21/302 ,  H01L21/304 ,  H01L21/68714

Abstract: A substrate cleaning apparatus that cleans a processing target substrate by blasting the gas clusters to the processing target substrate. The apparatus includes: a chamber configured to accommodate the processing target substrate; a rotary stage configured to rotatably support the processing target substrate in the chamber; an blasting unit configured to blast the gas clusters to the processing target substrate supported by the rotary stage; a driving unit configured to scan a gas cluster-blasted position on the processing target substrate; an exhaust port configured to evacuate the chamber; and a control mechanism configured to control a scattering direction of particles by controlling a rotation direction of the processing target substrate by the rotary stage and a scanning direction of the gas cluster-blasted position, thereby suppressing re-adhesion of the particles to the processing target substrate.

公开(公告)号：US20130092264A1

公开(公告)日：2013-04-18

申请号：US13650247

申请日：2012-10-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tsuneyuki OKABE ,  Shuji MORIYA ,  Kazushige MATSUNO

IPC: F17D3/00

CPC classification number: G05D7/0635 ,  G01F1/68 ,  G01F5/00 ,  Y10T137/7759 ,  Y10T137/7761 ,  Y10T137/8158

Abstract: The flow rate controller controlling a flow rate of gas supplied through a gas passage includes: a main gas pipe; a flow rate detecting unit detecting the flow rate of gas supplied through the main gas pipe and outputting a flow rate signal; a flow rate control valve mechanism controlling a flow rate; a conversion data storage unit storing a plurality of pieces of conversion data corresponding to a plurality of gaseous species, to indicate a relationship between a flow rate instruction signal input from outside and a target flow rate; and a flow rate control main body which selects the corresponding conversion data from the conversion data based on a gaseous species selection signal input from outside, calculates the target flow rate based on the flow rate instruction signal, and controls the flow rate control valve mechanism based on the target flow rate and the flow rate signal.

Abstract translation: 控制通过气体通道供给的气体的流量的流量控制器包括：主气体管道; 流量检测单元，检测通过主气体管道供给的气体的流量，并输出流量信号; 控制流量的流量控制阀机构; 存储对应于多个气态物质的多个转换数据的转换数据存储单元，以指示从外部输入的流量指令信号与目标流量之间的关系; 以及流量控制主体，其基于从外部输入的气体种类选择信号从转换数据中选择相应的转换数据，基于流量指令信号计算目标流量，并且基于流量控制阀机构控制 对目标流量和流量信号。

公开(公告)号：US20170316947A1

公开(公告)日：2017-11-02

申请号：US15486145

申请日：2017-04-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shuji MORIYA ,  Masahiko TOMITA

IPC: H01L21/3065 ,  H01L21/67

CPC classification number: H01L21/3065 ,  H01L21/67069 ,  H01L21/67248

Abstract: A substrate processing method includes a fluorine-based gas supply step of supplying a fluorine-based gas into a processing chamber where a substrate having a silicon-based film is accommodated, a purge gas supply step of supplying a purge gas for discharging the supplied fluorine-based gas into the processing chamber. The substrate processing method further includes a nitrogen-based gas supply step of supplying a nitrogen-based gas into the processing chamber from which the fluorine-based gas has been discharged. In the substrate processing method, at least in the fluorine-based gas supply step and the purge gas supply step, a temperature of the substrate is maintained at 60° C. or less.

公开(公告)号：US20140357085A1

公开(公告)日：2014-12-04

申请号：US14290036

申请日：2014-05-29

Applicant: TOKYO ELECTRON LIMITED ,  L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE

Inventor： Shuji MORIYA ,  Atsushi ANDO ,  Jun SONOBE ,  Christopher TURPIN

IPC: H01L21/306 ,  H01L21/67

CPC classification number: H01L21/67069 ,  H01L21/3065 ,  H01L21/67207

Abstract: Provided is a method of selectively etching a portion of silicon existing on a surface of a substrate to be processed, which includes: loading the substrate to be processed into a chamber; and supplying an FNO gas and an F2 gas that are diluted with an inert gas into the chamber such that the FNO gas and the F2 gas are reacted with the portion of silicon existing on the surface of the substrate to be processed.

Abstract translation: 提供了选择性地蚀刻存在于待处理基板的表面上的硅的一部分的方法，其包括：将待处理的基板装载到室中; 并且将用惰性气体稀释的FNO气体和F2气体供给到室中，使得FNO气体和F2气体与存在于待处理衬底表面上的部分硅反应。

公开(公告)号：US20140076849A1

公开(公告)日：2014-03-20

申请号：US14022449

申请日：2013-09-10

Applicant: Tokyo Electron Limited

Inventor： Shuji MORIYA

IPC: H01L21/465 ,  H01L21/67

CPC classification number: H01L21/465 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67069

Abstract: An etching apparatus includes: a chamber configured to accommodate a substrate to be processed having an etching target film; a gas exhaust mechanism configured to exhaust an inside of the chamber; an etching gas supply mechanism configured to supply an etching gas into the chamber; and a gas cluster generation mechanism configured to generate a gas cluster in the chamber by spraying a cluster gas into the chamber, wherein a gas produced by a reaction when the etching target film is etched with the etching gas is discharged from the chamber by the gas cluster generated by the gas cluster generation mechanism.

Abstract translation: 蚀刻装置包括：被配置为容纳具有蚀刻目标膜的被处理基板的室; 排气机构，其构造成排出所述室的内部; 蚀刻气体供给机构，其构造成将蚀刻气体供给到所述室中; 以及气体簇生成机构，被配置为通过将聚集气体喷射到所述室中而在所述室中产生气体簇，其中当用所述蚀刻气体蚀刻所述蚀刻目标膜时通过反应产生的气体通过所述气体从所述室排出 由气体簇生成机制产生的簇。