公开(公告)号：US08753786B2

公开(公告)日：2014-06-17

申请号：US13682188

申请日：2012-11-20

Applicant: Shin-Etsu Chemical Co., Ltd. ,  Toppan Printing Co., Ltd.

Inventor： Hiroki Yoshikawa ,  Yukio Inazuki ,  Ryuji Koitabashi ,  Hideo Kaneko ,  Yosuke Kojima ,  Takashi Haraguchi ,  Tomohito Hirose

IPC: G03F1/26 ,  G03F1/32

CPC classification number: G03F1/32 ,  G03F1/26

Abstract: A light pattern exposure method is by irradiating ArF excimer laser light to a resist film through a halftone phase shift mask. The mask includes a transparent substrate and a pattern of halftone phase shift film of a material comprising a transition metal, silicon, nitrogen and oxygen and having an atomic ratio (Met/Si) of 0.18-0.25, a nitrogen content of 25-50 atom %, and an oxygen content of 5-20 atom %. The mask may be irradiated with ArF excimer laser light in a cumulative dose of at least 10 kJ/cm2.

Abstract translation: 光图案曝光方法是通过半色调相移掩模将ArF准分子激光照射到抗蚀剂膜上。 掩模包括透明基板和包含过渡金属，硅，氮和氧并且原子比（Met / Si）为0.18-0.25，氮含量为25-50原子的材料的半色调相移膜的图案 ％，氧含量为5-20原子％。 可以以至少10kJ / cm 2的累积剂量用ArF准分子激光照射掩模。

公开(公告)号：US09448468B2

公开(公告)日：2016-09-20

申请号：US14227705

申请日：2014-03-27

Applicant: TOPPAN PRINTING CO., LTD.

Inventor： Masahito Tanabe ,  Norihito Fukugami ,  Yo Sakata ,  Tooru Komizo ,  Takashi Haraguchi

IPC: G03F1/24 ,  G03F1/22 ,  G03F1/00

CPC classification number: G03F1/24 ,  G03F1/146 ,  G03F1/38

Abstract: A reflective mask blank, a reflective mask, and methods for manufacturing those, which suppress reflectance at a light-shielding frame. The reflective mask includes a substrate, a multilayered reflective layer formed on the substrate, an absorption layer formed on the multilayered reflective layer, and a frame-shaped light-shielding frame area at which the absorption layer has a film thickness larger than a film thickness at other areas. The multilayered reflective layer is diffused and mixed at the light-shielding frame area through melting.

Abstract translation: 反射型掩模坯料，反射型掩模，以及抑制遮光框的反射率的制造方法。 反射掩模包括基板，形成在基板上的多层反射层，形成在多层反射层上的吸收层和吸收层的膜厚大于膜厚的框状遮光框区域 在其他地区。 多层反射层通过熔化在遮光框架区域扩散混合。

公开(公告)号：US08753787B2

公开(公告)日：2014-06-17

申请号：US13682228

申请日：2012-11-20

Applicant: Shin-Etsu Chemical Co., Ltd. ,  Toppan Printing Co., Ltd.

Inventor： Hiroki Yoshikawa ,  Yukio Inazuki ,  Ryuji Koitabashi ,  Hideo Kaneko ,  Yosuke Kojima ,  Takashi Haraguchi ,  Tomohito Hirose

IPC: G03F1/68 ,  G03F1/50

CPC classification number: G03F1/00 ,  G03F1/32 ,  G03F1/60

Abstract: A light pattern exposure method is by irradiating ArF excimer laser light to a resist film through a photomask. The photomask includes a transparent substrate and a pattern of optical film of a material comprising a transition metal, silicon, nitrogen and oxygen, with contents thereof falling in a specific range. The photomask may be irradiated with ArF excimer laser light in a cumulative dose of at least 10 kJ/cm2.

Abstract translation: 光图案曝光方法是通过光掩模将ArF准分子激光照射到抗蚀剂膜上。 光掩模包括透明基板和包含过渡金属，硅，氮和氧的材料的光学膜图案，其内容物落在特定范围内。 可以以至少10kJ / cm 2的累积剂量用ArF准分子激光照射光掩模。

公开(公告)号：US20140212795A1

公开(公告)日：2014-07-31

申请号：US14227705

申请日：2014-03-27

Applicant: TOPPAN PRINTING CO., LTD.

Inventor： Masahito TANABE ,  Norihito Fukugami ,  Yo Sakata ,  Tooru Komizo ,  Takashi Haraguchi

IPC: G03F1/24

CPC classification number: G03F1/24 ,  G03F1/146 ,  G03F1/38

Abstract: A reflective mask blank, a reflective mask, and methods for manufacturing those, which suppress reflectance at a light-shielding frame. The reflective mask includes a substrate, a multilayered reflective layer formed on the substrate, an absorption layer formed on the multilayered reflective layer, and a frame-shaped light-shielding frame area at which the absorption layer has a film thickness larger than a film thickness at other areas. The multilayered reflective layer is diffused and mixed at the light-shielding frame area through melting.

Abstract translation: 反射型掩模坯料，反射型掩模，以及抑制遮光框的反射率的制造方法。 反射掩模包括基板，形成在基板上的多层反射层，形成在多层反射层上的吸收层和吸收层的膜厚大于膜厚的框状遮光框区域 在其他地区。 多层反射层通过熔化在遮光框架区域扩散混合。