PLASMA CVD DEVICE AND PLASMA CVD METHOD
    1.
    发明申请
    PLASMA CVD DEVICE AND PLASMA CVD METHOD 审中-公开
    等离子体CVD装置和等离子体CVD方法

    公开(公告)号:US20160024657A1

    公开(公告)日:2016-01-28

    申请号:US14775121

    申请日:2014-03-07

    Abstract: The present invention relates to a plasma CVD device provided with a vacuum chamber, and a plasma CVD electrode unit and a substrate-holding mechanism inside the vacuum chamber. The plasma CVD electrode unit is provided with an anode, a cathode that faces the anode at a distance, and a first gas supply nozzle for supplying gas so as to pass through the plasma-generation space between the anode and cathode. The substrate-holding mechanism is disposed at a position where the gas passing through the plasma-generation space impinges. The length of the anode in the gas-supply direction and the length of the cathode in the gas-supply direction are both longer than the distance between the anode and the cathode. Thus, a plasma CVD device that makes it possible to increase gas decomposition efficiency and achieve high film deposition rate is provided.

    Abstract translation: 本发明涉及一种设置有真空室的等离子体CVD装置,以及真空室内的等离子体CVD电极单元和基板保持机构。 等离子体CVD电极单元设置有阳极,与阳极相隔一定距离的阴极和用于供给气体以通过阳极和阴极之间的等离子体产生空间的第一气体供给喷嘴。 衬底保持机构设置在穿过等离子体产生空间的气体撞击的位置。 气体供给方向上的阳极长度和阴极在气体供给方向上的长度都比阳极和阴极之间的距离长。 因此,提供了使得可以提高气体分解效率并实现高成膜速度的等离子体CVD装置。

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