公开(公告)号：US20210319986A1

公开(公告)日：2021-10-14

申请号：US17356195

申请日：2021-06-23

Applicant: c/o Toshiba Memory Corporation

Inventor： Yosuke SATO ,  Akio UI ,  Hisataka HAYASHI

IPC: H01J37/32 ,  C23C16/50 ,  H01L21/3065

Abstract: A plasma processing apparatus of an embodiment includes a chamber, an introducing part, a substrate electrode, a high-frequency power source, a low-frequency power source, and a switching mechanism. The introducing part introduces a process gas into the chamber. The substrate electrode is disposed in the chamber, a substrate is directly or indirectly mounted on the substrate electrode, and the substrate electrode includes a first and a second electrode elements alternately arranged. The high-frequency power source outputs a high-frequency voltage of 40 MHz or more for ionizing the process gas to generate plasma. The low-frequency power source outputs a low-frequency voltage of 20 MHz or less for introducing ions from the plasma. The switching mechanism applies the low-frequency voltage alternately to the first and the second electrode elements.

公开(公告)号：US20180145086A1

公开(公告)日：2018-05-24

申请号：US15661243

申请日：2017-07-27

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Kaori NARUMIYA ,  Hisataka HAYASHI ,  Keisuke KIKUTANI ,  Akio UI ,  Yosuke SATO

IPC: H01L27/11582 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L27/11582 ,  H01J37/32706 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32137 ,  H01L27/1157 ,  H01L27/11575

Abstract: A dry etching method includes a process of, while continuously applying bias power using an ion species to a material to be processed including a first conductive member, a first insulating film provided on the first conductive member, a second conductive member provided on the first insulating film, and a second insulating film provided on the second conductive member, dry etching the second insulating film to expose the second conductive member. A time for which the bias power is continuously applied is set to 50 microseconds or less and a duty ratio of the bias power is set to 50% or less.