公开(公告)号：US10304704B2

公开(公告)日：2019-05-28

申请号：US15046781

申请日：2016-02-18

Applicant: Toshiba Memory Corporation

Inventor： Katsuhiro Sato ,  Junichi Igarashi ,  Yoshihiro Ogawa

IPC: F26B5/14 ,  H01L21/67 ,  H01L21/02

Abstract: A substrate processing method according to an embodiment is a substrate processing method for drying a substrate. The substrate processing method includes supplying a solution in which a sublimation material is dissolved in a first solvent to a surface of a cleaned substrate. The substrate processing method includes eliminating at least a portion of association states of the sublimation material. The substrate processing method includes precipitating the sublimation material on the surface of the substrate. The substrate processing method includes removing the precipitated sublimation material by sublimation.

公开(公告)号：US10192733B2

公开(公告)日：2019-01-29

申请号：US15440896

申请日：2017-02-23

Applicant: Toshiba Memory Corporation

Inventor： Junichi Igarashi ,  Katsuhiro Sato ,  Masaaki Hirakawa

IPC: H01L21/02 ,  B08B3/08 ,  B08B3/10 ,  H01L21/28 ,  H01L21/311 ,  H01L21/3213 ,  H01L27/108

Abstract: A method of manufacturing a semiconductor device including attaching, by a liquid treatment, a first liquid to a surface of a semiconductor substrate having a fine pattern formed therein; substituting the first liquid attached to the surface of the semiconductor substrate with a solution, the solution comprising a sublimate dissolved in a second liquid; vaporizing the second liquid and precipitating the sublimate to the surface of the semiconductor substrate to forma solid precipitate comprising the sublimate; and removing the precipitate by sublimation. For example, the sublimate may be a material having at least two carboxyl groups bonded to cyclohexane or a material formed of two carboxyl groups bonded to benzene with the bonding sites of the two carboxyl groups being adjacent to one another.

公开(公告)号：US09934958B2

公开(公告)日：2018-04-03

申请号：US14644772

申请日：2015-03-11

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Katsuhiro Sato ,  Junichi Igarashi

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02057 ,  H01L21/67028 ,  H01L21/67253

Abstract: The substrate treatment apparatus includes a first nozzle, a second nozzle, a detector, and a controller. The first nozzle supplies an organic sublimable material-containing liquid capable of displacing a rinsing liquid, to a surface of a substrate treated with the rinsing liquid. The second nozzle supplies vapor of a solvent in which the organic sublimable material is capable of dissolving, to the surface of the substrate. The detector detects a first physical amount of the vapor on the surface of the substrate. The controller controls a second physical amount of the vapor according to the first physical amount.

公开(公告)号：US10672640B2

公开(公告)日：2020-06-02

申请号：US16059213

申请日：2018-08-09

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Junichi Igarashi

IPC: H01L21/00 ,  H01L21/687 ,  B05B13/02 ,  B05C11/02 ,  B05C11/10 ,  H01L21/67

Abstract: A semiconductor processing apparatus according to the present embodiment is provided with a stage capable of placing a semiconductor substrate thereon and of rotating the semiconductor substrate. A plurality of holders are provided on the stage, to hold an edge of the semiconductor substrate. A plurality of sensors are provided to the plurality of holders, respectively, to detect the edge of the semiconductor substrate. An elevator mechanism is capable of changing heights of the holders. A controller controls the elevator mechanism to change the heights of the holders so that the plurality of sensors detect the edge of the semiconductor substrate.