公开(公告)号：US10515797B2

公开(公告)日：2019-12-24

申请号：US16031535

申请日：2018-07-10

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Kazuhito Furumoto ,  Keisuke Kikutani ,  Soichi Yamazaki

IPC: H01L21/02 ,  H01L27/11563 ,  H01L21/302 ,  H01L21/033 ,  H01L21/28

Abstract: According to one embodiment, a method for producing a semiconductor device includes forming a first film on a substrate. A second film is formed on the first film. A recess is formed in the second film. First processing by which a third film is formed on the second film to form a side face of the recess with the second film and second processing by which the first film exposed in the recess is processed by using the second and third films, are executed one or more times. In relation to an N-th (N is an integer greater than or equal to 1) first processing, before the third film is formed on the second film, a surface inclined with respect to the side face of the recess is formed above the side face of the recess.

公开(公告)号：US10763122B2

公开(公告)日：2020-09-01

申请号：US15695918

申请日：2017-09-05

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Soichi Yamazaki ,  Kazuhito Furumoto ,  Kosuke Horibe ,  Keisuke Kikutani ,  Atsuko Sakata ,  Junichi Wada ,  Toshiyuki Sasaki

IPC: H01L21/311 ,  H01L21/3213 ,  H01L21/033 ,  H01L27/11582 ,  H01L27/1157

Abstract: A method of manufacturing a semiconductor device includes forming a mask layer including aluminum or an aluminum compound on a layer to be etched comprising at least one first metal selected from tungsten, tantalum, zirconium, hafnium, molybdenum, niobium, ruthenium, osmium, rhenium, and iridium. The method of manufacturing a semiconductor device further includes patterning the mask layer, and etching the layer to be etched by using the patterned mask layer to form a hole or a groove in the layer to be etched.