公开(公告)号：US09935121B2

公开(公告)日：2018-04-03

申请号：US15063887

申请日：2016-03-08

申请人： Toshiba Memory Corporation

发明人： Satoshi Konagai ,  Yoshihiro Akutsu ,  Masaru Kito

IPC分类号： H01L29/792 ,  H01L27/11582 ,  H01L21/768 ,  H01L27/11565

CPC分类号： H01L27/11582 ,  H01L21/76879 ,  H01L27/11565

摘要： According to one embodiment, a semiconductor memory device includes a stacked body, a semiconductor pillar, a memory film and a conductive member. The stacked body includes a plurality of electrode layers arranged in a first direction. The semiconductor pillar extends in the stacked body in the first direction. The memory film provides between the stacked body and the semiconductor pillar. The conductive member includes a contact and an interconnect. The contact includes metal, the contact extending in the stacked body in the first direction. The interconnect extends in a second direction crossing the first direction, and the interconnect including metal.

公开(公告)号：US09876028B2

公开(公告)日：2018-01-23

申请号：US15266158

申请日：2016-09-15

申请人： TOSHIBA MEMORY CORPORATION

发明人： Satoshi Konagai

IPC分类号： H01L27/115 ,  H01L27/11582 ,  H01L27/11565 ,  H01L23/528 ,  H01L27/11563 ,  H01L27/11553 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11568

CPC分类号： H01L27/11582 ,  H01L23/5283 ,  H01L27/11524 ,  H01L27/11551 ,  H01L27/11553 ,  H01L27/11556 ,  H01L27/11563 ,  H01L27/11565 ,  H01L27/11568 ,  H01L27/1157

摘要： The memory string comprises: a plurality of control gate electrodes stacked on the substrate and extending in a first direction and a second direction parallel to the substrate; a semiconductor layer that has one end thereof connected to the substrate, has as its longitudinal direction a third direction perpendicular to the substrate, and faces the plurality of control gate electrodes; and a charge accumulation layer positioned between the control gate electrode and the semiconductor layer. The contact includes, in the third direction, a first portion, a second portion which is more to a substrate side than is the first portion, and a third portion which is more to the substrate side than is the second portion. A width of the second portion is larger than a width of the first portion, and larger than a width of the third portion.

公开(公告)号：US10121797B2

公开(公告)日：2018-11-06

申请号：US15269082

申请日：2016-09-19

申请人： TOSHIBA MEMORY CORPORATION

发明人： Shigeki Kobayashi ,  Satoshi Konagai ,  Atsushi Konno ,  Kenta Yamada ,  Masaaki Higuchi ,  Masao Shingu ,  Soichiro Kitazaki ,  Yoshimasa Mikajiri

IPC分类号： H01L27/115 ,  H01L29/51 ,  H01L27/11582 ,  H01L29/423 ,  H01L29/49 ,  H01L21/285 ,  H01L21/28 ,  H01L21/768

摘要： According to an embodiment, a semiconductor memory device comprises: a stacked body including control gate electrodes stacked upwardly of a substrate; a semiconductor layer facing the control gate electrodes; and a gate insulating layer provided between the control gate electrode and the semiconductor layer. The stacked body comprises: a first metal layer configuring the control gate electrode; a first barrier metal layer contacting an upper surface of this first metal layer; a first silicon nitride layer contacting an upper surface of this first barrier metal layer; a first inter-layer insulating layer contacting an upper surface of this first silicon nitride layer; a second barrier metal layer contacting a lower surface of the first metal layer; a second silicon nitride layer contacting a lower surface of this second barrier metal layer; and a second inter-layer insulating layer contacting a lower surface of this second silicon nitride layer.

公开(公告)号：US09917101B1

公开(公告)日：2018-03-13

申请号：US15463612

申请日：2017-03-20

申请人： Toshiba Memory Corporation

发明人： Satoshi Konagai

IPC分类号： H01L27/115 ,  H01L27/11582 ,  H01L27/11575 ,  H01L21/28 ,  H01L27/11565

CPC分类号： H01L27/11582 ,  H01L21/28282 ,  H01L27/11565 ,  H01L27/11573 ,  H01L27/11575

摘要： According to one embodiment, a semiconductor memory device includes a substrate, a stacked body, a columnar member, and an insulating film. The stacked body is provided on the substrate, and includes a plurality of electrode layers separately stacked each other. The columnar member is provided in the stacked body, and includes a first semiconductor portion extending in a stacked direction of the plurality of electrode layers. The insulating film covers a bottom portion of the columnar member.