公开(公告)号：US20180138237A1

公开(公告)日：2018-05-17

申请号：US15696751

申请日：2017-09-06

Applicant: Toshiba Memory Corporation

Inventor： Megumi YAKABE ,  Satoshi SETO ,  Chikayoshi KAMATA ,  Saori KASHIWADA ,  Junichi ITO

IPC: H01L27/22 ,  H01L43/08 ,  H01L43/02

CPC classification number: H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: According to one embodiment, a magnetoresistive effect element includes: a first magnetic layer; a nonmagnetic layer provided on the first magnetic layer; a second magnetic layer provided on the nonmagnetic layer; a first insulating layer provided at least on a side surface of the second magnetic layer; a second insulating layer covering at least a part of the first insulating layer; a conductive layer provided between the first insulating layer and the second insulating layer; and a first electrode including a first portion on the second magnetic layer and a second portion on a side surface of the second insulating layer. A height of a lower surface of the second portion is equal to or less than a height of an upper surface of the conductive layer.

公开(公告)号：US20190006580A1

公开(公告)日：2019-01-03

申请号：US16125764

申请日：2018-09-09

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Masatoshi YOSHIKAWA ,  Hiroaki YODA ,  Shuichi TSUBATA ,  Kenji NOMA ,  Tatsuya KISHI ,  Satoshi SETO ,  Kazuhiro TOMIOKA

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/08 ,  H01L43/12

Abstract: A method of manufacturing a magnetic memory device includes forming a stacked structure including a magnetic element, forming a metal film which covers the stacked structure, and forming a protective insulating film formed of a metallic oxide by oxidizing the metal film. A metal element contained in the metallic oxide is selected from yttrium (Y), aluminum (Al), magnesium (Mg), calcium (Ca), zirconium (Zr) and hafnium (Hf).