公开(公告)号：US20190006580A1

公开(公告)日：2019-01-03

申请号：US16125764

申请日：2018-09-09

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Masatoshi YOSHIKAWA ,  Hiroaki YODA ,  Shuichi TSUBATA ,  Kenji NOMA ,  Tatsuya KISHI ,  Satoshi SETO ,  Kazuhiro TOMIOKA

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/08 ,  H01L43/12

Abstract: A method of manufacturing a magnetic memory device includes forming a stacked structure including a magnetic element, forming a metal film which covers the stacked structure, and forming a protective insulating film formed of a metallic oxide by oxidizing the metal film. A metal element contained in the metallic oxide is selected from yttrium (Y), aluminum (Al), magnesium (Mg), calcium (Ca), zirconium (Zr) and hafnium (Hf).

公开(公告)号：US20200075671A1

公开(公告)日：2020-03-05

申请号：US16678316

申请日：2019-11-08

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Jyunichi OZEKI ,  Masahiko NAKAYAMA ,  Hiroaki YODA ,  Eiji KITAGAWA ,  Takao OCHIAI ,  Minoru AMANO ,  Kenji NOMA

IPC: H01L27/22 ,  H01L43/08 ,  H01L43/10

Abstract: According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, and including a first main surface and a second main surface located opposite to the first main surface, a second magnetic layer provided on a first main surface side of the first magnetic layer, and having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein a saturation magnetization of a part of the first magnetic layer which is located close to the first main surface is higher than a saturation magnetization of a part of the first magnetic layer which is located close to the second main surface.