公开(公告)号：US20190088856A1

公开(公告)日：2019-03-21

申请号：US15918820

申请日：2018-03-12

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Masatoshi YOSHIKAWA ,  Shuichi TSUBATA

IPC: H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

CPC classification number: H01L43/02 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: According to one embodiment, a magnetic memory device includes a stacked structure, the stacked structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein the nonmagnetic layer comprises a structure in which a first oxide layer formed of a first metal oxide and a second oxide layer formed of a second metal oxide having a relative dielectric constant greater than a relative dielectric constant of the first metal oxide are stacked.

公开(公告)号：US20180269386A1

公开(公告)日：2018-09-20

申请号：US15691446

申请日：2017-08-30

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Shuichi TSUBATA ,  Masatoshi YOSHIKAWA ,  Kenji NOMA

IPC: H01L43/08 ,  H01L43/02 ,  H01L43/12

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  H01L43/02 ,  H01L43/12

Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer having a variable magnetization direction, a nonmagnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the nonmagnetic layer and having a fixed magnetization direction, wherein as viewed in a direction parallel to a stacked direction of the stacked structure, a pattern of a lower surface of the first magnetic layer is located inside a pattern of an upper surface of the first magnetic layer, and a pattern of an upper surface of the second magnetic layer is located inside a pattern of a lower surface of the second magnetic layer or substantially conforms to the pattern of the lower surface of the second magnetic layer.

公开(公告)号：US20180076261A1

公开(公告)日：2018-03-15

申请号：US15457556

申请日：2017-03-13

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Masatoshi YOSHIKAWA ,  Shuichi TSUBATA

IPC: H01L27/22 ,  H01L43/08 ,  H01L43/10 ,  H01L43/02

CPC classification number: H01L27/222 ,  H01L43/08 ,  H01L43/12

Abstract: According to one embodiment, a semiconductor memory device includes a magnetoresistive element and an insulating layer. The magnetoresistive element includes a first magnetic layer, a nonmagnetic layer, and a second magnetic layer and. The magnetoresistive element is capable of storing data according to a direction of magnetization in the first magnetic layer. The insulating layer covers a side surface of the magnetoresistive element. The first magnetic layer includes a first region and a second region. Each of the first and second regions includes a magnetic material and a nonmagnetic material. A concentration ratio of the nonmagnetic material to the magnetic material is higher in the second region than in the first region.

公开(公告)号：US20180261270A1

公开(公告)日：2018-09-13

申请号：US15702155

申请日：2017-09-12

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Masatoshi YOSHIKAWA ,  Kuniaki SUGIURA

IPC: G11C11/16 ,  H01L43/02 ,  H01L43/08 ,  H01L27/22

CPC classification number: G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L23/528 ,  H01L27/224 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: According to an embodiment, a magnetic storage device includes a memory cell including a magnetoresistive element, a selector, a first end, and a second end. The magnetoresistive element includes a first ferromagnetic layer, a second ferromagnetic layer, a third ferromagnetic layer, a first nonmagnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, and a second nonmagnetic layer disposed between the second ferromagnetic layer and the third ferromagnetic layer to couple the second ferromagnetic layer with the third ferromagnetic layer in an antiferromagnetic manner. The first ferromagnetic layer has a film thickness larger than a film thickness of the second ferromagnetic layer.

公开(公告)号：US20190287590A1

公开(公告)日：2019-09-19

申请号：US16126823

申请日：2018-09-10

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Masatoshi YOSHIKAWA

IPC: G11C11/16 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer, wherein the first magnetic layer includes a first sub-magnetic layer, a second sub-magnetic layer, and a first intermediate layer between the first sub-magnetic layer and the second sub-magnetic layer, and the first sub-magnetic layer is provided between the nonmagnetic layer and the second sub-magnetic layer and has a magnetization direction antiparallel to a magnetization direction of the second sub-magnetic layer and has a magnetization amount smaller than that of the second sub-magnetic layer.

公开(公告)号：US20190006580A1

公开(公告)日：2019-01-03

申请号：US16125764

申请日：2018-09-09

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Masatoshi YOSHIKAWA ,  Hiroaki YODA ,  Shuichi TSUBATA ,  Kenji NOMA ,  Tatsuya KISHI ,  Satoshi SETO ,  Kazuhiro TOMIOKA

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/08 ,  H01L43/12

Abstract: A method of manufacturing a magnetic memory device includes forming a stacked structure including a magnetic element, forming a metal film which covers the stacked structure, and forming a protective insulating film formed of a metallic oxide by oxidizing the metal film. A metal element contained in the metallic oxide is selected from yttrium (Y), aluminum (Al), magnesium (Mg), calcium (Ca), zirconium (Zr) and hafnium (Hf).

公开(公告)号：US20180076263A1

公开(公告)日：2018-03-15

申请号：US15463215

申请日：2017-03-20

Applicant: Toshiba Memory Corporation

Inventor： Kuniaki SUGIURA ,  Masahiko HASUNUMA ,  Masatoshi YOSHIKAWA

IPC: H01L27/22 ,  H01L43/08 ,  H01L43/02

CPC classification number: H01L27/228 ,  H01L43/02 ,  H01L43/08

Abstract: According to one embodiment, a magnetic memory device includes a first insulating film provided on a semiconductor region, and having a portion located in a memory cell array area and thicker than a portion located in a peripheral circuit area, a plurality of conductive plugs located in the memory cell array area and provided in the first insulating film, stacked structures located in the memory cell array area, provided on the conductive plugs, and each having layers including a magnetic layer, and transistors located in the peripheral circuit area, and each including a gate electrode provided on the semiconductor region and covered with the first insulating film, wherein a thickness t0 from a main surface of the semiconductor region to a lower surface of each stacked structure is greater than a predetermined value.

公开(公告)号：US20200321040A1

公开(公告)日：2020-10-08

申请号：US16904080

申请日：2020-06-17

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Masatoshi YOSHIKAWA

IPC: G11C11/16 ,  H01L43/10 ,  H01L43/08 ,  H01L43/02

Abstract: According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer, wherein the first magnetic layer includes a first sub-magnetic layer, a second sub-magnetic layer, and a first intermediate layer between the first sub-magnetic layer and the second sub-magnetic layer, and the first sub-magnetic layer is provided between the nonmagnetic layer and the second sub-magnetic layer and has a magnetization direction antiparallel to a magnetization direction of the second sub-magnetic layer and has a magnetization amount smaller than that of the second sub-magnetic layer.

公开(公告)号：US20200303625A1

公开(公告)日：2020-09-24

申请号：US16564123

申请日：2019-09-09

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Masatoshi YOSHIKAWA ,  Tatsuya KISHI

IPC: H01L43/02 ,  H01L27/22 ,  G11C11/16

Abstract: According to one embodiment, a magnetic memory device includes a first interconnect and a magnetoresistive effect element. The first interconnect includes a first nonmagnet including a light metal and a second nonmagnet including a heavy metal on the first nonmagnet. The magnetoresistive effect element includes a third nonmagnet on the second nonmagnet, a first ferromagnet on the third nonmagnet, a second ferromagnet, and a fourth nonmagnet between the first ferromagnet and the second ferromagnet. The third nonmagnet has a film thickness of 2 nanometers or less.

公开(公告)号：US20200083291A1

公开(公告)日：2020-03-12

申请号：US16353439

申请日：2019-03-14

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Masatoshi YOSHIKAWA

IPC: H01L27/22 ,  H01L43/10 ,  H01L43/08

Abstract: According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein the first magnetic layer includes a first sub-magnetic layer in a polycrystalline state and a second sub-magnetic layer in an amorphous state.