公开(公告)号：US20170365357A1

公开(公告)日：2017-12-21

申请号：US15620295

申请日：2017-06-12

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Shinya KOBAYASHI ,  Kenji NOMA ,  Mikio MIYATA

IPC: G11C29/38 ,  H01L27/22 ,  G11C11/16 ,  H01L43/08 ,  H01L43/02

CPC classification number: G11C29/38 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

Abstract: A magnetic memory device includes a memory cell array comprising memory cells including magnetic tunnel junction elements. Each memory cell is electrically connected between a source line and a bit line. A control circuit is configured to perform a screening test on the memory cell array before writing data to the memory cell array. The screening test determines whether an abnormal cell is present in the memory cell array. The controller applies a first writing voltage to the write data to the memory cell array if the abnormal cell is not present, or applies a second writing voltage to write data to the memory cell array if the abnormal cell is present. The second writing voltage is different from the first writing voltage.

公开(公告)号：US20200075671A1

公开(公告)日：2020-03-05

申请号：US16678316

申请日：2019-11-08

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Jyunichi OZEKI ,  Masahiko NAKAYAMA ,  Hiroaki YODA ,  Eiji KITAGAWA ,  Takao OCHIAI ,  Minoru AMANO ,  Kenji NOMA

IPC: H01L27/22 ,  H01L43/08 ,  H01L43/10

Abstract: According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, and including a first main surface and a second main surface located opposite to the first main surface, a second magnetic layer provided on a first main surface side of the first magnetic layer, and having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein a saturation magnetization of a part of the first magnetic layer which is located close to the first main surface is higher than a saturation magnetization of a part of the first magnetic layer which is located close to the second main surface.

公开(公告)号：US20180269386A1

公开(公告)日：2018-09-20

申请号：US15691446

申请日：2017-08-30

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Shuichi TSUBATA ,  Masatoshi YOSHIKAWA ,  Kenji NOMA

IPC: H01L43/08 ,  H01L43/02 ,  H01L43/12

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  H01L43/02 ,  H01L43/12

Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer having a variable magnetization direction, a nonmagnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the nonmagnetic layer and having a fixed magnetization direction, wherein as viewed in a direction parallel to a stacked direction of the stacked structure, a pattern of a lower surface of the first magnetic layer is located inside a pattern of an upper surface of the first magnetic layer, and a pattern of an upper surface of the second magnetic layer is located inside a pattern of a lower surface of the second magnetic layer or substantially conforms to the pattern of the lower surface of the second magnetic layer.

公开(公告)号：US20190006580A1

公开(公告)日：2019-01-03

申请号：US16125764

申请日：2018-09-09

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Masatoshi YOSHIKAWA ,  Hiroaki YODA ,  Shuichi TSUBATA ,  Kenji NOMA ,  Tatsuya KISHI ,  Satoshi SETO ,  Kazuhiro TOMIOKA

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/08 ,  H01L43/12

Abstract: A method of manufacturing a magnetic memory device includes forming a stacked structure including a magnetic element, forming a metal film which covers the stacked structure, and forming a protective insulating film formed of a metallic oxide by oxidizing the metal film. A metal element contained in the metallic oxide is selected from yttrium (Y), aluminum (Al), magnesium (Mg), calcium (Ca), zirconium (Zr) and hafnium (Hf).