公开(公告)号：US10916562B2

公开(公告)日：2021-02-09

申请号：US16411307

申请日：2019-05-14

Applicant: Toshiba Memory Corporation

Inventor： Takashi Ishida ,  Yoshiaki Fukuzumi ,  Takayuki Okada ,  Masaki Tsuji

IPC: H01L23/48 ,  H01L23/52 ,  H01L27/11582 ,  H01L27/11565 ,  H01L27/1157 ,  H01L29/10 ,  H01L29/423

Abstract: According to an embodiment, a non-volatile memory device includes first electrodes stacked on an underlying layer, a second electrode provided on the first electrodes, a semiconductor layer extending in a first direction from the underlying layer to the second electrode, and a memory film provided between each of the first electrodes and the semiconductor layer. The semiconductor layer includes a first portion adjacent to the first electrodes and a second portion adjacent to the second electrode. The second portion has a thickness thinner than a thickness of the first portion in a second direction perpendicular to the first direction.

公开(公告)号：US10340285B2

公开(公告)日：2019-07-02

申请号：US15928951

申请日：2018-03-22

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Takashi Ishida ,  Yoshiaki Fukuzumi ,  Takayuki Okada ,  Masaki Tsuji

IPC: H01L23/48 ,  H01L23/52 ,  H01L27/11582 ,  H01L27/11565 ,  H01L27/1157 ,  H01L29/10 ,  H01L29/423

Abstract: According to an embodiment, a non-volatile memory device includes first electrodes stacked on an underlying layer, a second electrode provided on the first electrodes, a semiconductor layer extending in a first direction from the underlying layer to the second electrode, and a memory film provided between each of the first electrodes and the semiconductor layer. The semiconductor layer includes a first portion adjacent to the first electrodes and a second portion adjacent to the second electrode. The second portion has a thickness thinner than a thickness of the first portion in a second direction perpendicular to the first direction.

公开(公告)号：US20180211971A1

公开(公告)日：2018-07-26

申请号：US15928951

申请日：2018-03-22

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Takashi ISHIDA ,  Yoshiaki Fukuzumi ,  Takayuki Okada ,  Masaki Tsuji

IPC: H01L27/11582 ,  H01L29/10 ,  H01L29/423

CPC classification number: H01L27/11582 ,  H01L27/11565 ,  H01L27/1157 ,  H01L29/1037 ,  H01L29/4234

Abstract: According to an embodiment, a non-volatile memory device includes first electrodes stacked on an underlying layer, a second electrode provided on the first electrodes, a semiconductor layer extending in a first direction from the underlying layer to the second electrode, and a memory film provided between each of the first electrodes and the semiconductor layer. The semiconductor layer includes a first portion adjacent to the first electrodes and a second portion adjacent to the second electrode. The second portion has a thickness thinner than a thickness of the first portion in a second direction perpendicular to the first direction.

公开(公告)号：US20200303393A1

公开(公告)日：2020-09-24

申请号：US16569215

申请日：2019-09-12

Applicant: Toshiba Memory Corporation

Inventor： Ryota Fujitsuka ,  Kenta Yamada ,  Takanori Yamanaka ,  Takayuki Okada ,  Hirokazu Ishigaki ,  Hiroki Kishi ,  Nobushi Matsuura ,  Takashi Yamane ,  Ryota Suzuki

IPC: H01L27/11563 ,  H01L21/02 ,  H01L21/768 ,  H01L21/28 ,  H01L29/423

Abstract: A semiconductor memory device according to an embodiment includes a semiconductor substrate; a laminated body formed by laminating a plurality of electrode layers on the semiconductor substrate; a memory film provided in the laminated body and including a first block insulation film disposed in a direction perpendicular to the electrode layer, a charge storage film facing the first block insulation film, a tunnel insulation film facing the charge storage film, and a channel film facing the tunnel insulation film; and a barrier layer provided at at least one of interface between the plurality of electrode layers and the memory film and an interface in the memory film and mainly composed of carbon.

公开(公告)号：US09991278B2

公开(公告)日：2018-06-05

申请号：US15388510

申请日：2016-12-22

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Takashi Ishida ,  Yoshiaki Fukuzumi ,  Takayuki Okada ,  Masaki Tsuji

IPC: H01L29/792 ,  H01L27/11582 ,  H01L29/423 ,  H01L29/10

CPC classification number: H01L27/11582 ,  H01L27/11565 ,  H01L27/1157 ,  H01L29/1037 ,  H01L29/4234

Abstract: According to an embodiment, a non-volatile memory device includes first electrodes stacked on an underlying layer, a second electrode provided on the first electrodes, a semiconductor layer extending in a first direction from the underlying layer to the second electrode, and a memory film provided between each of the first electrodes and the semiconductor layer. The semiconductor layer includes a first portion adjacent to the first electrodes and a second portion adjacent to the second electrode. The second portion has a thickness thinner than a thickness of the first portion in a second direction perpendicular to the first direction.