公开(公告)号：US20200083431A1

公开(公告)日：2020-03-12

申请号：US16290481

申请日：2019-03-01

Applicant: Toshiba Memory Corporation

Inventor： Takeshi IWASAKI ,  Akiyuki MURAYAMA ,  Tadashi KAI ,  Tadaomi DAIBOU ,  Masaki ENDO ,  Shumpei OMINE ,  Taichi IGARASHI ,  Junichi ITO

IPC: H01L43/02 ,  H01L43/10 ,  H01L27/22 ,  H01L43/12 ,  G11C11/16

Abstract: According to one embodiment, a storage device includes a magnetoresistive effect element comprising a nonmagnetic layer and a stacked body on the nonmagnetic layer. The stacked body includes a first ferromagnetic layer on the nonmagnetic layer, a second ferromagnetic layer exchange-coupled with the first ferromagnetic layer, and a magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer. The magnetic layer includes a magnetic material and at least one compound selected from among a carbide, a nitride, and a boride.

公开(公告)号：US20200286954A1

公开(公告)日：2020-09-10

申请号：US16570230

申请日：2019-09-13

Applicant: Toshiba Memory Corporation

Inventor： Takanori USAMI ,  Takeshi ISHIZAKI ,  Ryohei KITAO ,  Katsuyoshi KOMATSU ,  Takeshi IWASAKI ,  Atsuko SAKATA

IPC: H01L27/24 ,  H01L27/22

Abstract: A storage device according to embodiments includes a first conductive layer; a second conductive layer; a resistance change element provided between the first conductive layer and the second conductive layer; and an intermediate layer provided in any one of a position between the resistance change element and the first conductive layer and a position between the resistance change element and the second conductive layer, the intermediate layer containing at least one element of silicon (Si) and germanium (Ge), tellurium (Te), and aluminum (Al).

公开(公告)号：US20190088862A1

公开(公告)日：2019-03-21

申请号：US15910696

申请日：2018-03-02

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Akiyuki MURAYAMA ,  Takeshi IWASAKI ,  Tadashi KAI ,  Tadaomi DAIBOU ,  Masaki ENDO ,  Taichi IGARASHI ,  Junichi ITO

IPC: H01L43/10 ,  H01L43/08 ,  H01L27/22

CPC classification number: H01L43/10 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

Abstract: According to one embodiment, a magnetic memory device includes a conductive underlayer having an amorphous structure and containing at least one first predetermined element selected from molybdenum (Mo), magnesium (Mg), rhenium (Re), tungsten (W), vanadium (V), and manganese (Mn), and a stacked structure provided on the underlayer, and including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer.

公开(公告)号：US20180269382A1

公开(公告)日：2018-09-20

申请号：US15703409

申请日：2017-09-13

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Shumpei OMINE ,  Takeshi IWASAKI ,  Masaki ENDO ,  Akiyuki MURAYAMA ,  Tadaomi DAIBOU ,  Tadashi KAI ,  Junichi ITO

IPC: H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic memory according to an embodiment includes: a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer; and a first layer disposed between the first magnetic layer and the third magnetic layer, wherein the first layer contains at least one element selected from the group consisting of Co, Fe, Ni, and Mn, and at least one element selected from the group consisting of Ta, Mo, Zr, Nb, Hf, V, Ti, Sc, and La.

公开(公告)号：US20200295086A1

公开(公告)日：2020-09-17

申请号：US16553746

申请日：2019-08-28

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Takeshi IWASAKI ,  Katsuyoshi KOMATSU ,  Hiroki KAWAI

IPC: H01L27/24 ,  H01L45/00

Abstract: A storage device includes a first conductor, a second conductor, a variable resistance layer, a first portion, and a second portion. The variable resistance layer connects with the first conductor or the second conductor. The first portion is provided between the first conductor and the second conductor, and has a first threshold voltage value at which the resistance value changes. The second portion is provided between the first conductor and the first portion and/or between the second conductor and the first portion, and has a second threshold voltage value at which the resistance value changes and which is higher than the first threshold voltage value.

公开(公告)号：US20200083432A1

公开(公告)日：2020-03-12

申请号：US16351985

申请日：2019-03-13

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Takeshi IWASAKI ,  Akiyuki MURAYAMA ,  Tadashi KAI ,  Tadaomi DAIBOU ,  Masaki ENDO ,  Shumpei OMINE ,  Taichi IGARASHI ,  Junichi ITO

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22 ,  G11C11/16

Abstract: According to one embodiment, a magnetic storage device includes: a magnetoresistive effect element including a non-magnet, and a stacked structure on the non-magnet, the stacked structure including: a first ferromagnet on the non-magnet; an anti-ferromagnet being exchange-coupled with the first ferromagnet; and a second ferromagnet between the first ferromagnet and the anti-ferromagnet. The stacked structure is configured to: have a first resistance value in response to a first current flowing through the stacked structure in a first direction, and have a second resistance value different from the first resistance value in response to a second current flowing through the stacked structure in a second direction opposite to the first direction.

公开(公告)号：US20200243763A1

公开(公告)日：2020-07-30

申请号：US16523394

申请日：2019-07-26

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Katsuyoshi KOMATSU ,  Takeshi IWASAKI

IPC: H01L45/00 ,  G11C13/00

Abstract: A semiconductor storage device is disclosed. The device includes: a first conductive layer; a second conductive layer apart from the first conductive layer in a first direction; a variable resistance layer provided between the first conductive layer and the second conductive layer; a third conductive layer provided between the first conductive layer and the variable resistance layer; a nonlinear layer provided between the first conductive layer and the third conductive layer; and a first insulating layer provided at least between the first conductive layer and the nonlinear layer or between the third conductive layer and the nonlinear layer. The first insulating layer includes nitrogen (N) and boron (B).