公开(公告)号：US20190081064A1

公开(公告)日：2019-03-14

申请号：US15909494

申请日：2018-03-01

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Hiroshi NAKAKI ,  Yosuke MITSUNO ,  Tatsuya OKAMOTO

IPC: H01L27/11582 ,  H01L29/10 ,  H01L29/51 ,  H01L29/04 ,  G11C16/04 ,  G11C16/10 ,  G11C16/26 ,  G11C16/14

Abstract: A semiconductor memory device includes a first semiconductor well of a first conductivity type in a memory cell region and a contact region of a substrate, a second semiconductor well of a second conductivity type in the first semiconductor well in the contact region, a plurality of electrode films stacked on the first semiconductor well and spaced from one another in a first direction, the plurality of electrode films extending in a second direction within the memory cell region into the contact region, a first semiconductor pillar extending in the second direction through the plurality of electrode films in the memory cell region, a second semiconductor pillar extending in the second direction through at least one electrode film in the contact region, a charge storage film between the first semiconductor pillar and each electrode film, an insulating film between the second semiconductor pillar and the at least one electrode film.

公开(公告)号：US20190181150A1

公开(公告)日：2019-06-13

申请号：US15929102

申请日：2019-02-05

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Wataru SAKAMOTO ,  Ryota SUZUKI ,  Tatsuya OKAMOTO ,  Tatsuya KATO ,  Fumitaka ARAI

IPC: H01L27/11556 ,  H01L29/792 ,  H01L29/66 ,  H01L29/06 ,  G11C16/04 ,  H01L23/528 ,  H01L27/11582 ,  H01L27/11519

Abstract: A semiconductor memory device includes two first electrode films, a first column and a second insulating film. The two first electrode films extend in a first direction and are separated from each other in a second direction. The first column is provided between the two first electrode films and has a plurality of first members and a plurality of insulating members. Each of the first members and each of the insulating members are arranged alternately in the first direction. One of the plurality of first members has a semiconductor pillar, a second electrode film and a first insulating film provided between the semiconductor pillar and the second electrode film. The semiconductor pillar, the first insulating film and the second electrode film are arranged in the second direction. The second insulating film is provided between the first column and one of the two first electrode films.