公开(公告)号：US20180277745A1

公开(公告)日：2018-09-27

申请号：US15702677

申请日：2017-09-12

Applicant: TOSHIBA MEMORY CORPORATION ,  SK HYNIX INC.

Inventor： Tadaaki OIKAWA ,  Toshihiko NAGASE ,  Youngmin EEH ,  Daisuke WATANABE ,  Kazuya SAWADA ,  Kenichi YOSHINO ,  Hiroyuki OHTORI ,  Yang Kon KIM ,  Ku Youl JUNG ,  Jong Koo LIM ,  Jae Hyoung LEE ,  Soo Man SEO ,  Sung Woong CHUNG ,  Tae Young LEE

IPC: H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: According to one embodiment, a magnetic memory device includes a magnetoresistive element, the magnetoresistive element including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. The first magnetic layer includes first and second sub-magnetic layers each containing at least iron (Fe) and boron (B), and a concentration of boron (B) contained in the first sub-magnetic layer is different from a concentration of boron (B) contained in the second sub-magnetic layer.

公开(公告)号：US20210184102A1

公开(公告)日：2021-06-17

申请号：US17032938

申请日：2020-09-25

Applicant: SK hynix Inc. ,  Kioxia Corporation

Inventor： Tae Young LEE ,  Guk Cheon KIM ,  Soo Gil KIM ,  Soo Man SEO ,  Jong Koo LIM ,  Taiga ISODA

IPC: H01L43/02 ,  G11C11/16 ,  H01L43/10

Abstract: An electronic device may include a semiconductor memory, and the semiconductor memory may include a magnetic tunnel junction (MTJ) structure including a free layer, a pinned layer, and a tunnel barrier layer, the free layer having a variable magnetization direction, the pinned layer having a fixed magnetization direction, the tunnel barrier layer being interposed between the free layer and the pinned layer; and a thermal stability enhanced layer (TSEL) including a homogeneous material having an Fe—O bond.

公开(公告)号：US20160099407A1

公开(公告)日：2016-04-07

申请号：US14710465

申请日：2015-05-12

Applicant: SK hynix Inc. ,  Korea University Research and Business Foundation

Inventor： Sang Ho LIM ,  Tae Young LEE ,  Young Chan WON ,  Seong Rae LEE

IPC: H01L43/10 ,  H01L27/22 ,  H01L43/02

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L27/222 ,  H01L43/08 ,  H01L43/12

Abstract: A multilayered magnetic thin-film stack including a tunneling barrier layer; a magnetic finned layer formed on a first surface of the tunneling barrier layer; and a magnetic free layer formed on a second surface of the tunneling barrier layer, which is opposite to the first surface, wherein at least one of the magnetic finned layer and the magnetic free layer includes a FeZr alloy layer and a first magnetic layer having a (001) bcc structure between the FeZr alloy layer and the tunneling barrier layer.

Abstract translation: 包括隧道势垒层的多层磁性薄膜叠层; 形成在隧道势垒层的第一表面上的磁性翅片层; 以及形成在所述隧道势垒层的与所述第一表面相对的第二表面上的无磁性层，其中所述磁性翅片层和所述无磁性层中的至少一个包括FeZr合金层和具有 （001）bcc结构在FeZr合金层和隧道势垒层之间。