公开(公告)号：US20190109280A1

公开(公告)日：2019-04-11

申请号：US16203114

申请日：2018-11-28

Applicant: SK hynix Inc. ,  TOSHIBA MEMORY CORPORATION

Inventor： Jong-Koo LIM ,  Won-Joon CHOI ,  Guk-Cheon KIM ,  Yang-Kon KIM ,  Ku-Youl JUNG ,  Toshihiko NAGASE ,  Youngmin EEH ,  Daisuke WATANABE ,  Kazuya SAWADA ,  Makoto NAGAMINE

IPC: H01L43/08 ,  H01L43/10 ,  H01L43/12

CPC classification number: H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Provided is a method for fabricating an electronic device including a variable resistance element which includes a free layer formed over a substrate and having a changeable magnetization direction, a pinned layer having a pinned magnetization direction, a tunnel barrier layer interposed between the free layer and the pinned layer, and a magnetic correction layer suitable for reducing the influence of a stray field generated by the pinned layer. The method may include: cooling the substrate; and forming the magnetic correction layer over the cooled substrate.

公开(公告)号：US20180277745A1

公开(公告)日：2018-09-27

申请号：US15702677

申请日：2017-09-12

Applicant: TOSHIBA MEMORY CORPORATION ,  SK HYNIX INC.

Inventor： Tadaaki OIKAWA ,  Toshihiko NAGASE ,  Youngmin EEH ,  Daisuke WATANABE ,  Kazuya SAWADA ,  Kenichi YOSHINO ,  Hiroyuki OHTORI ,  Yang Kon KIM ,  Ku Youl JUNG ,  Jong Koo LIM ,  Jae Hyoung LEE ,  Soo Man SEO ,  Sung Woong CHUNG ,  Tae Young LEE

IPC: H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: According to one embodiment, a magnetic memory device includes a magnetoresistive element, the magnetoresistive element including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. The first magnetic layer includes first and second sub-magnetic layers each containing at least iron (Fe) and boron (B), and a concentration of boron (B) contained in the first sub-magnetic layer is different from a concentration of boron (B) contained in the second sub-magnetic layer.

公开(公告)号：US20190296226A1

公开(公告)日：2019-09-26

申请号：US16123846

申请日：2018-09-06

Applicant: TOSHIBA MEMORY CORPORATION ,  SK HYNIX INC.

Inventor： Young Min EEH ,  Daisuke WATANABE ,  Jae-Hyoung LEE ,  Toshihiko NAGASE ,  Kazuya SAWADA ,  Tadaaki OIKAWA ,  Kenichi YOSHINO ,  Taiga ISODA

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12 ,  G11C11/16

Abstract: According to one embodiment, a magnetic device includes a magnetoresistive effect element including a first ferromagnet, a conductor, and an oxide provided between the first ferromagnet and the conductor, the oxide including a first oxide of a rare-earth element and a second oxide of an element of which a covalent radius is smaller than a covalent radius of the rare-earth element.

公开(公告)号：US20180284199A1

公开(公告)日：2018-10-04

申请号：US15841535

申请日：2017-12-14

Applicant: SK hynix Inc. ,  Toshiba Memory Corporation

Inventor： Ku-Youl JUNG ,  Guk-Cheon KIM ,  Toshihiko NAGASE ,  Daisuke WATANABE ,  Won-Joon CHOI ,  Youngmin EEH ,  Kazuya SAWADA

IPC: G01R33/09 ,  H01L27/11 ,  H01L27/108 ,  H01L27/112

CPC classification number: G01R33/093 ,  G01R33/098 ,  G11C11/16 ,  G11C11/161 ,  H01L27/108 ,  H01L27/1104 ,  H01L27/112 ,  H01L27/22

Abstract: An electronic device may include a semiconductor memory, and the semiconductor memory may include a free layer having a variable magnetization direction; a pinned layer having a pinned magnetization direction; and a tunnel barrier layer between the free layer and the pinned layer, wherein the free layer may include a first magnetic layer; a second magnetic layer having a smaller perpendicular magnetic anisotropy energy density than the first magnetic layer; and a spacer interposed between the first magnetic layer and the second magnetic layer.

公开(公告)号：US20190079873A1

公开(公告)日：2019-03-14

申请号：US16186231

申请日：2018-11-09

Applicant: SK hynix Inc. ,  Toshiba Memory Corporation

Inventor： Yang-Kon KIM ,  Ki-Seon PARK ,  Bo-Mi LEE ,  Won-Joon CHOI ,  Guk-Cheon KIM ,  Daisuke WATANABE ,  Makoto NAGAMINE ,  Young-Min EEH ,  Koji UEDA ,  Toshihiko NAGASE ,  Kazuya SAWADA

IPC: G06F12/0875 ,  H01L43/08 ,  G11C11/16 ,  H01L43/10

Abstract: An electronic device includes semiconductor memory, the semiconductor memory including an under layer; a first magnetic layer located over the under layer and having a variable magnetization direction; a tunnel barrier layer located over the first magnetic layer; and a second magnetic layer located over the tunnel barrier layer and having a pinned magnetization direction, wherein the under layer includes a first metal nitride layer having a NaCl crystal structure and a second metal nitride layer containing a light metal.

公开(公告)号：US20200083285A1

公开(公告)日：2020-03-12

申请号：US16352680

申请日：2019-03-13

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Toshihiko NAGASE ,  Daisuke WATANABE ,  Koji UEDA ,  Tadashi KAI ,  Kazumasa SUNOUCHI

IPC: H01L27/22 ,  H01L43/02 ,  G11C11/16 ,  H01F10/32 ,  H01L43/12 ,  H01F41/34

Abstract: According to one embodiment, a semiconductor storage device includes: a first memory cell and a second memory cell, each including a switching element and a resistance change element coupled to the switching element, and the first memory cell and the second memory cell being adjacent to each other; a non-active member having a switching function between the switching element of the first memory cell and the switching element of the second memory cell; and an insulator which covers at least one of an upper surface or a lower surface of the non-active member, a side surface of the non-active member, a side surface of the switching element of the first memory cell, and a side surface of the switching element of the second memory cell.

公开(公告)号：US20190259438A1

公开(公告)日：2019-08-22

申请号：US16400048

申请日：2019-05-01

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Tatsuya KISHI ,  Tsuneo INABA ,  Daisuke WATANABE ,  Masahiko NAKAYAMA ,  Nobuyuki OGATA ,  Masaru TOKO ,  Hisanori AIKAWA ,  Jyunichi OZEKI ,  Toshihiko NAGASE ,  Young Min EEH ,  Kazuya SAWADA

IPC: G11C11/16 ,  G11C7/10

Abstract: A memory device includes a magnetoresistive element including first and second magnetic layers and a non-magnetic layer provided between the first and second magnetic layers. The memory device also includes a write circuit which controls a first writing setting magnetization of the first and second magnetic layers in a parallel state and a second writing setting the magnetization of the first and second magnetic layers in an antiparallel state, and applies a write current to the magnetoresistive element. A first write current in the first writing includes a first pulse and a second pulse added to the first pulse. A width of the second pulse is smaller than a width of the first pulse, and a scurrent level of the second pulse is different from a current level of the first pulse.

公开(公告)号：US20180075895A1

公开(公告)日：2018-03-15

申请号：US15456031

申请日：2017-03-10

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Tatsuya KISHI ,  Tsuneo INABA ,  Daisuke WATANABE ,  Masahiko NAKAYAMA ,  Nobuyuki OGATA ,  Masaru TOKO ,  Hisanori AIKAWA ,  Jyunichi OZEKI ,  Toshihiko NAGASE ,  Young Min EEH ,  Kazuya SAWADA

IPC: G11C11/16

CPC classification number: G11C11/1675 ,  G11C7/1096 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1673

Abstract: According to one embodiment, a memory device includes: a magnetoresistive element including first and second magnetic layers and a non-magnetic layer provided between the first and second magnetic layers; and a write circuit which controls a first writing setting magnetization of the first and second magnetic layers in a parallel state and a second writing setting the magnetization of the first and second magnetic layers in an antiparallel state, and applies a current pulse to the magnetoresistive element. A first pulse pattern used in the first writing is different from a second pulse pattern used in the second writing.

公开(公告)号：US20210335888A1

公开(公告)日：2021-10-28

申请号：US17371138

申请日：2021-07-09

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Masayoshi IWAYAMA ,  Tatsuya KISHI ,  Masahiko NAKAYAMA ,  Toshihiko NAGASE ,  Daisuke WATANABE ,  Tadashi KAI

IPC: H01L27/22 ,  H01L43/12 ,  H01L43/02 ,  H01L43/10

Abstract: A magnetic memory device including a first memory cell which includes a first stacked structure including a magnetic layer and a second memory cell which is provided on the first memory cell and includes a second stacked structure including a magnetic layer. Each of the first stacked structure and the second stacked structure includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. A concentration of iron (Fe) contained in the first magnetic layer included in the first stacked structure and a concentration of iron (Fe) contained in the first magnetic layer included in the second stacked structure are different from each other.

公开(公告)号：US20180076383A1

公开(公告)日：2018-03-15

申请号：US15463331

申请日：2017-03-20

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Kazuya SAWADA ,  Toshihiko NAGASE ,  Youngmin EEH ,  Daisuke WATANABE ,  Kenichi YOSHINO ,  Tadaaki OIKAWA ,  Hiroyuki OHTORI

IPC: H01L43/08 ,  H01L43/10 ,  H01L27/22

CPC classification number: H01L43/08 ,  H01L27/228 ,  H01L43/10 ,  H01L43/12

Abstract: According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer between the first and second magnetic layers. The second magnetic layer includes a first main surface on the nonmagnetic layer side and a second main surface opposite to the first main surface, and includes a first region on the first main surface side and a second region on the second main surface side, and an intermediate region between the first and second regions and containing a predetermined nonmagnetic element. A concentration of the predetermined nonmagnetic element in the intermediate region is higher than that in the first and second regions. The second magnetic layer contains a magnetic element from the first to second main surfaces.