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公开(公告)号：US10236373B2
公开(公告)日：2019-03-19
申请号：US15647041
申请日：2017-07-11
发明人： Junichiro Kurosaki , Tohru Oka , Junya Nishii , Tsutomu Ina
IPC分类号： H01L29/78 , H01L21/306 , H01L29/786 , H01L21/205 , H01L29/12 , H01L29/51 , H01L29/417 , H01L29/66 , H01L29/739 , H01L29/20 , H01L29/16
摘要： To suppress current leakage in a semiconductor device having a gate insulating film and a gate electrode. A gate electrode is continuously formed in a film via a gate insulating film on the bottom surface of a trench, the side surfaces of a trench, and the top surfaces of a second n-type layer in the vicinity of the side surfaces of the trench. The ends of the bottom surface of the gate electrode are aligned with the ends of the top surface of the gate insulating film, and the ends of the bottom surface of the gate insulating film are formed in contact with the surfaces of the second n-type layer facing the ends of the bottom surface of the gate electrode. The passivation film covers the entire top surface of the device except the contact holes of the gate electrode and the source electrode.
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公开(公告)号：US20160093703A1
公开(公告)日：2016-03-31
申请号：US14853867
申请日：2015-09-14
发明人： Tsutomu Ina , Tohru Oka
IPC分类号： H01L29/417 , H01L29/20 , H01L21/32 , H01L21/768 , H01L21/311
CPC分类号： H01L29/2003 , H01L29/41741 , H01L29/513 , H01L29/66348 , H01L29/66734 , H01L29/7397 , H01L29/7813
摘要： A semiconductor device includes: a semiconductor layer; a first electrode that is in ohmic contact with part of the semiconductor layer; an insulating film that is formed over from the semiconductor layer to the first electrode and has an opening area on an inner side of a first edge of the first electrode; a second electrode that is located at a position different from the first electrode and is formed on at least one of the insulating film and the semiconductor layer; and a third electrode that is made of an identical component with a component of the second electrode and is formed on the first electrode through the opening area and is also formed over from the first electrode to an inner side of the first edge on the insulating film.
摘要翻译： 半导体器件包括：半导体层; 与所述半导体层的一部分欧姆接触的第一电极; 绝缘膜，其从所述半导体层到所述第一电极形成，并且在所述第一电极的第一边缘的内侧具有开口区域; 位于与所述第一电极不同的位置并形成在所述绝缘膜和所述半导体层中的至少一个上的第二电极; 以及第三电极，其由与所述第二电极的部件相同的部件制成并且通过所述开口区域形成在所述第一电极上，并且还从所述第一电极到所述绝缘膜上的所述第一边缘的内侧形成 。
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公开(公告)号：US10468515B2
公开(公告)日：2019-11-05
申请号：US15164677
申请日：2016-05-25
发明人： Tsutomu Ina , Tohru Oka
IPC分类号： H01L29/78 , H01L29/778 , H01L29/10 , H01L29/20 , H01L29/205 , H01L29/423 , H01L29/66 , H02M1/08 , H02M1/42 , H02M7/06 , H01L29/08 , H02M7/00
摘要： There is provided a semiconductor device comprising a substrate, a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a trench and an insulating film arranged to cover a surface of the trench. The first semiconductor layer has a carrier concentration that provides a peak in a thickness direction perpendicular to a plane direction. A high carrier concentration area having a peak of the carrier concentration in the first semiconductor layer is extended in the plane direction at a location away from the trench to be located on the substrate side of the trench. This configuration reduces the on resistance while suppressing reduction of the breakdown voltage in the semiconductor device.
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公开(公告)号：US09831311B2
公开(公告)日：2017-11-28
申请号：US14853867
申请日：2015-09-14
发明人： Tsutomu Ina , Tohru Oka
CPC分类号： H01L29/2003 , H01L29/41741 , H01L29/513 , H01L29/66348 , H01L29/66734 , H01L29/7397 , H01L29/7813
摘要： A semiconductor device includes: a semiconductor layer; a first electrode that is in ohmic contact with part of the semiconductor layer; an insulating film that is formed over from the semiconductor layer to the first electrode and has an opening area on an inner side of a first edge of the first electrode; a second electrode that is located at a position different from the first electrode and is formed on at least one of the insulating film and the semiconductor layer; and a third electrode that is made of an identical component with a component of the second electrode and is formed on the first electrode through the opening area and is also formed over from the first electrode to an inner side of the first edge on the insulating film.
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公开(公告)号：US12002853B2
公开(公告)日：2024-06-04
申请号：US17244604
申请日：2021-04-29
发明人： Toru Oka , Tsutomu Ina
IPC分类号： H01L29/08 , H01L29/20 , H01L29/24 , H01L29/423 , H01L29/78
CPC分类号： H01L29/0843 , H01L29/2003 , H01L29/24 , H01L29/4236
摘要： The present invention provides a semiconductor device in which the contact resistance of the body electrode is reduced without reducing the channel mobility. The p-type layer is a Mg-doped p-GaN layer deposited on the first re-type layer. The p-type layer has a two-layer structure in which a first p-type layer and a second p-type layer are sequentially deposited. The second p-type layer has a Mg concentration higher than the Mg concentration of the first p-type layer. The recess is formed in a predetermined position on the surface of the second n-type layer, and has a depth passing through the second n-type layer and reaching the second p-type layer. The body electrode is formed on the bottom surface of the recess in contact with the p-type layer exposed thereon.
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公开(公告)号：US10403727B2
公开(公告)日：2019-09-03
申请号：US16129554
申请日：2018-09-12
发明人： Tsutomu Ina , Yukihisa Ueno , Tohru Oka
IPC分类号： H01L29/78 , H01L29/40 , H01L29/417 , H01L29/423 , H01L29/06 , H01L29/12 , H01L29/739 , H01L21/8234 , H01L29/66 , H01L29/16 , H01L29/20
摘要： To provide a technique for alleviating electric field concentration at an end portion and the vicinity of the end portion of the bottom surface of a trench. In a non-active region, a semiconductor device comprises: an outer trench penetrating a third semiconductor layer and a second semiconductor layer to reach a first semiconductor layer, and surrounding an active region; a second insulating film covering the surface of the outer trench; a conductor formed in the outer trench covered by the second insulating film and electrically insulated from a control electrode and a contact electrode; and an outer electrode located outside the outer trench, contacting the second semiconductor layer, and being electrically connected to the contact electrode.
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公开(公告)号：US09685348B2
公开(公告)日：2017-06-20
申请号：US15055357
申请日：2016-02-26
发明人： Tsutomu Ina , Tohru Oka , Nariaki Tanaka
IPC分类号： H01L21/3213 , H01L29/45
CPC分类号： H01L21/32135 , H01L21/28575 , H01L29/2003 , H01L29/4236 , H01L29/45 , H01L29/452 , H01L29/7786
摘要： An object is to avoid an increase in contact resistance of an ohmic electrode by etching in a semiconductor device. There is provided a method of manufacturing a semiconductor device. The method of manufacturing comprises forming a semiconductor layer; forming an ohmic electrode by stacking a plurality of metal layers, on the semiconductor layer; forming another metal layer that is mainly made of another metal different from a material of an outermost layer among the plurality of metal layers, on the ohmic electrode; removing the another metal layer from top of the ohmic electrode by etching; and processing the ohmic electrode by heat treatment, subsequent to the etching.
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