公开(公告)号：US07432564B2

公开(公告)日：2008-10-07

申请号：US11960737

申请日：2007-12-20

申请人： Ta-Jung Su ,  Yea-Chung Shih ,  Cheng-Fang Su

发明人： Ta-Jung Su ,  Yea-Chung Shih ,  Cheng-Fang Su

IPC分类号： H01L29/78

CPC分类号： G02F1/1362 ,  G02F1/13458

摘要： A method for fabricating a pixel structure is provided. First, a gate, a scan line, and a first terminal are formed on a substrate. A gate insulating layer is formed over the substrate to cover the gate, the scan line, and the first terminal. After defining the semiconductor layer, the gate insulating layer is patterned to exposure the first terminal. A transparent conductive layer is formed over the substrate and a patterned photoresist layer is formed on the transparent conductive layer. The transparent conductive layer is patterned using the patterned photoresist layer as a mask, so as to define a source, a drain, a data line, a pixel electrode, a second terminal, and a contact pad. Because only four photomasks are used to implement the above method for fabricating the pixel structure, the cost of manufacturing can be reduced.

摘要翻译： 提供了一种用于制造像素结构的方法。 首先，在基板上形成栅极，扫描线和第一端子。 栅极绝缘层形成在衬底上以覆盖栅极，扫描线和第一端子。 在限定半导体层之后，栅极绝缘层被图案化以暴露第一端子。 在衬底上形成透明导电层，并且在透明导电层上形成图案化的光致抗蚀剂层。 使用图案化的光致抗蚀剂层作为掩模来图案化透明导电层，以便限定源极，漏极，数据线，像素电极，第二端子和接触焊盘。 由于仅使用四个光掩模来实现用于制造像素结构的上述方法，所以可以降低制造成本。

公开(公告)号：US20080128700A1

公开(公告)日：2008-06-05

申请号：US11960737

申请日：2007-12-20

申请人： Ta-Jung Su ,  Yea-Chung Shih ,  Cheng-Fang Su

发明人： Ta-Jung Su ,  Yea-Chung Shih ,  Cheng-Fang Su

IPC分类号： H01L29/04

CPC分类号： G02F1/1362 ,  G02F1/13458

摘要： A method for fabricating a pixel structure is provided. First, a gate, a scan line, and a first terminal are formed on a substrate. A gate insulating layer is formed over the substrate to cover the gate, the scan line, and the first terminal. After defining the semiconductor layer, the gate insulating layer is patterned to exposure the first terminal. A transparent conductive layer is formed over the substrate and a patterned photoresist layer is formed on the transparent conductive layer. The transparent conductive layer is patterned using the patterned photoresist layer as a mask, so as to define a source, a drain, a data line, a pixel electrode, a second terminal, and a contact pad. Because only four photomasks are used to implement the above method for fabricating the pixel structure, the cost of manufacturing can be reduced.

摘要翻译： 提供了一种用于制造像素结构的方法。 首先，在基板上形成栅极，扫描线和第一端子。 栅极绝缘层形成在衬底上以覆盖栅极，扫描线和第一端子。 在限定半导体层之后，栅极绝缘层被图案化以暴露第一端子。 在衬底上形成透明导电层，并且在透明导电层上形成图案化的光致抗蚀剂层。 使用图案化的光致抗蚀剂层作为掩模来图案化透明导电层，以便限定源极，漏极，数据线，像素电极，第二端子和接触焊盘。 由于仅使用四个光掩模来实现用于制造像素结构的上述方法，所以可以降低制造成本。

公开(公告)号：US07338846B2

公开(公告)日：2008-03-04

申请号：US11306814

申请日：2006-01-12

申请人： Ta-Jung Su ,  Yea-Chung Shih ,  Cheng-Fang Su

发明人： Ta-Jung Su ,  Yea-Chung Shih ,  Cheng-Fang Su

IPC分类号： H01L21/84

CPC分类号： G02F1/1362 ,  G02F1/13458

摘要： A method for fabricating a pixel structure is provided. First, a gate, a scan line, and a first terminal are formed on a substrate. A gate insulating layer is formed over the substrate to cover the gate, the scan line, and the first terminal. After defining the semiconductor layer, the gate insulating layer is patterned to exposure the first terminal. A transparent conductive layer is formed over the substrate and a patterned photoresist layer is formed on the transparent conductive layer. The transparent conductive layer is patterned using the patterned photoresist layer as a mask, so as to define a source, a drain, a data line, a pixel electrode, a second terminal, and a contact pad. Because only four photomasks are used to implement the above method for fabricating the pixel structure, the cost of manufacturing can be reduced.

摘要翻译： 提供了一种用于制造像素结构的方法。 首先，在基板上形成栅极，扫描线和第一端子。 栅极绝缘层形成在衬底上以覆盖栅极，扫描线和第一端子。 在限定半导体层之后，栅极绝缘层被图案化以暴露第一端子。 在衬底上形成透明导电层，并且在透明导电层上形成图案化的光致抗蚀剂层。 使用图案化的光致抗蚀剂层作为掩模来图案化透明导电层，以便限定源极，漏极，数据线，像素电极，第二端子和接触焊盘。 由于仅使用四个光掩模来实现用于制造像素结构的上述方法，所以可以降低制造成本。

公开(公告)号：US20070161136A1

公开(公告)日：2007-07-12

申请号：US11306814

申请日：2006-01-12

申请人： Ta-Jung Su ,  Yea-Chung Shih ,  Cheng-Fang Su

发明人： Ta-Jung Su ,  Yea-Chung Shih ,  Cheng-Fang Su

IPC分类号： H01L21/00

CPC分类号： G02F1/1362 ,  G02F1/13458

摘要： A method for fabricating a pixel structure is provided. First, a gate, a scan line, and a first terminal are formed on a substrate. A gate insulating layer is formed over the substrate to cover the gate, the scan line, and the first terminal. After defining the semiconductor layer, the gate insulating layer is patterned to exposure the first terminal. A transparent conductive layer is formed over the substrate and a patterned photoresist layer is formed on the transparent conductive layer. The transparent conductive layer is patterned using the patterned photoresist layer as a mask, so as to define a source, a drain, a data line, a pixel electrode, a second terminal, and a contact pad. Because only four photomasks are used to implement the above method for fabricating the pixel structure, the cost of manufacturing can be reduced.

摘要翻译： 提供了一种用于制造像素结构的方法。 首先，在基板上形成栅极，扫描线和第一端子。 栅极绝缘层形成在衬底上以覆盖栅极，扫描线和第一端子。 在限定半导体层之后，栅极绝缘层被图案化以暴露第一端子。 在衬底上形成透明导电层，并且在透明导电层上形成图案化的光致抗蚀剂层。 使用图案化的光致抗蚀剂层作为掩模来图案化透明导电层，以便限定源极，漏极，数据线，像素电极，第二端子和接触焊盘。 由于仅使用四个光掩模来实现用于制造像素结构的上述方法，所以可以降低制造成本。

公开(公告)号：US07754509B2

公开(公告)日：2010-07-13

申请号：US11393436

申请日：2006-03-29

申请人： Ta-Jung Su ,  Chin-Tzu Kao ,  Chia-Che Hsu

发明人： Ta-Jung Su ,  Chin-Tzu Kao ,  Chia-Che Hsu

IPC分类号： H01L21/00

CPC分类号： H01L27/1288 ,  H01L27/1214

摘要： A manufacturing method for a thin film transistor (TFT) is provided. In the manufactured TFT, after a source structure, a drain structure and a channel structure are formed, a first photoresist layer is not removed and a second photoresist is formed on the first photoresist layer through which a semiconductor structure is formed. Further, n-type amorphous silicon, poly silicon or an organic metallic compound is used in replace of the conventional metal to form the source and drain structures so as to reduce step number of manufacturing for the TFT.

摘要翻译： 提供了薄膜晶体管（TFT）的制造方法。 在制造的TFT中，在源极结构形成漏极结构和沟道结构之后，不去除第一光致抗蚀剂层，并且在形成半导体结构的第一光致抗蚀剂层上形成第二光致抗蚀剂。 此外，使用n型非晶硅，多晶硅或有机金属化合物代替常规金属以形成源极和漏极结构，以便减少TFT的制造步骤数量。

公开(公告)号：US07682310B2

公开(公告)日：2010-03-23

申请号：US11757413

申请日：2007-06-04

申请人： Chung-Yuo Wu ,  Yi-Hong Chou ,  Ta-Jung Su ,  Meng-Tsung Lo

发明人： Chung-Yuo Wu ,  Yi-Hong Chou ,  Ta-Jung Su ,  Meng-Tsung Lo

IPC分类号： A61B8/00 ,  A61B8/14

CPC分类号： A61B5/031 ,  A61B8/04 ,  A61B8/0808 ,  A61B8/481

摘要： A method for measuring intracranial pressure in an intracranial area filled with micro-bubbles formed by an injected contrast agent includes: (1) emitting an ultrasound signal having a bandwidth to the intracranial area, (2) receiving an echoed signal from a micro-bubble, (3) performing a spectral analysis on the echoed signal to extract a low-frequency response, which is close to a DC component, (4) calculating a resonant frequency of the micro-bubbles according to the bandwidth and strength of the low-frequency response, the bandwidth of the low-frequency response similar to the bandwidth of the ultrasound signal, (5) calculating a size of the micro-bubble according to the resonant frequency and a property of the contrast agent, and (6) calculating the intracranial pressure.

摘要翻译： 一种用于测量填充有注射造影剂形成的微气泡的颅内区域的颅内压的方法包括：（1）向颅内区域发射具有带宽的超声信号，（2）从微泡接收回波信号 （3）对回波信号进行频谱分析，提取接近直流分量的低频响应，（4）根据低频响应的带宽和强度来计算微气泡的共振频率， 频率响应，低频响应的带宽类似于超声信号的带宽，（5）根据谐振频率和造影剂的性质计算微气泡的尺寸，（6）计算 颅内压

公开(公告)号：US20070238228A1

公开(公告)日：2007-10-11

申请号：US11393436

申请日：2006-03-29

申请人： Ta-Jung Su ,  Chin-Tzu Kao ,  Chia-Che Hsu

发明人： Ta-Jung Su ,  Chin-Tzu Kao ,  Chia-Che Hsu

IPC分类号： H01L21/84

CPC分类号： H01L27/1288 ,  H01L27/1214

摘要： A manufacturing method for a thin film transistor (TFT) is provided. In the manufactured TFT, after a source structure, a drain structure and a channel structure are formed, a first photoresist layer is not removed and a second photoresist is formed on the first photoresist layer through which a semiconductor structure is formed. Further, n-type amorphous silicon, poly silicon or an organic metallic compound is used in replace of the conventional metal to form the source and drain structures so as to reduce step number of manufacturing for the TFT.

摘要翻译： 提供了薄膜晶体管（TFT）的制造方法。 在制造的TFT中，在源极结构形成漏极结构和沟道结构之后，不去除第一光致抗蚀剂层，并且在形成半导体结构的第一光致抗蚀剂层上形成第二光致抗蚀剂。 此外，使用n型非晶硅，多晶硅或有机金属化合物代替常规金属以形成源极和漏极结构，以便减少TFT的制造步骤数量。

公开(公告)号：US20070003845A1

公开(公告)日：2007-01-04

申请号：US11161311

申请日：2005-07-29

申请人： Ta-Jung Su ,  Shu-Min Wu

发明人： Ta-Jung Su ,  Shu-Min Wu

IPC分类号： G02B5/20

CPC分类号： G02B5/204 ,  G02F1/133512 ,  G02F1/133516

摘要： A color filter substrate including a substrate, a black matrix, a plurality of color filter patterns and a common electrode is provided. The substrate has a plurality of pixel regions thereon. The black matrix comprises a plurality of strip patterns, wherein the strip patterns are disposed between the pixel regions to isolate the pixel regions, and each strip pattern has a side portion distant from the substrate and extending to the edge of the adjacent pixel region. Each color filter pattern is disposed in each pixel region. The common electrode is disposed over the substrate and covering the color filter patterns and the black matrix.

摘要翻译： 提供了包括基板，黑矩阵，多个滤色器图案和公共电极的滤色器基板。 基板上具有多个像素区域。 黑色矩阵包括多个条形图案，其中条形图案设置在像素区域之间以隔离像素区域，并且每个条形图案具有远离基板并延伸到相邻像素区域的边缘的侧部。 每个滤色器图案设置在每个像素区域中。 公共电极设置在衬底上并覆盖滤色器图案和黑色矩阵。

公开(公告)号：US20080111959A1

公开(公告)日：2008-05-15

申请号：US11907361

申请日：2007-10-11

申请人： Ta-Jung Su ,  Yu-Wei Chang ,  Ming-Sheng Chiang

发明人： Ta-Jung Su ,  Yu-Wei Chang ,  Ming-Sheng Chiang

IPC分类号： H01L21/02 ,  G02F1/1335

CPC分类号： G02F1/133553 ,  G02F1/1362 ,  G02F2202/42

摘要： The structure of a trans-reflective liquid crystal display panel includes stacks in longitudinally and two areas in transversely, which are reflective area and transmissive area. A thin-film-transistor layer and a dielectric layer are formed on a substrate in sequential. For the transmissive area, a transparent conductive film, such as a pixel electrode, is formed. For the reflective area, a reflective film with multi-layer is formed on the dielectric layer and then the thin-film-transistor layer. After assembling, the trans-reflective liquid crystal display is complete. The materials of the reflective film with multi-layer and the dielectric layer are similar to have greater adhesion. Each layer of the reflective film with multi-layer includes two sublayers, the first reflective sublayer and the second reflective sublayer, which have the different refractive indexes. By modifying the temperature, pressure, gas flow and power of emitting in manufacturing process can make the refractive indexes of both layers.

摘要翻译： 反射型液晶显示面板的结构纵向包括两个横向的区域，它们是反射区域和透射区域。 依次在基板上形成薄膜晶体管层和电介质层。 对于透射区域，形成诸如像素电极的透明导电膜。 对于反射区域，在介电层上形成多层反射膜，然后形成薄膜晶体管层。 组装后，反射式液晶显示屏完成。 具有多层和介电层的反射膜的材料类似于具有更大的附着力。 具有多层的反射膜的每个层包括具有不同折射率的两个子层，第一反射子层和第二反射子层。 通过改变制造过程中的温度，压力，气体流量和发射功率可以使两层的折射率。

公开(公告)号：US20070225607A1

公开(公告)日：2007-09-27

申请号：US11757413

申请日：2007-06-04

申请人： Chung-Yuo Wu ,  Yi-Hong Chou ,  Ta-Jung Su ,  Meng-Tsung Lo

发明人： Chung-Yuo Wu ,  Yi-Hong Chou ,  Ta-Jung Su ,  Meng-Tsung Lo

IPC分类号： A61B8/00

CPC分类号： A61B5/031 ,  A61B8/04 ,  A61B8/0808 ,  A61B8/481

摘要： A method for measuring intracranial pressure in an intracranial area filled with micro-bubbles formed by an injected contrast agent includes: (1) emitting an ultrasound signal having a bandwidth to the intracranial area, (2) receiving an echoed signal from a micro-bubble, (3) performing a spectral analysis on the echoed signal to extract a low-frequency response, which is close to a DC component, (4) calculating a resonant frequency of the micro-bubbles according to the bandwidth and strength of the low-frequency response, the bandwidth of the low-frequency response similar to the bandwidth of the ultrasound signal, (5) calculating a size of the micro-bubble according to the resonant frequency and a property of the contrast agent, and (6) calculating the intracranial pressure.

摘要翻译： 一种用于测量填充有注射造影剂形成的微气泡的颅内区域的颅内压的方法包括：（1）向颅内区域发射具有带宽的超声信号，（2）从微泡接收回波信号 （3）对回波信号进行频谱分析，提取接近直流分量的低频响应，（4）根据低频响应的带宽和强度来计算微气泡的共振频率， 频率响应，低频响应的带宽类似于超声信号的带宽，（5）根据谐振频率和造影剂的性质计算微气泡的尺寸，（6）计算 颅内压