公开(公告)号：US07754509B2

公开(公告)日：2010-07-13

申请号：US11393436

申请日：2006-03-29

申请人： Ta-Jung Su ,  Chin-Tzu Kao ,  Chia-Che Hsu

发明人： Ta-Jung Su ,  Chin-Tzu Kao ,  Chia-Che Hsu

IPC分类号： H01L21/00

CPC分类号： H01L27/1288 ,  H01L27/1214

摘要： A manufacturing method for a thin film transistor (TFT) is provided. In the manufactured TFT, after a source structure, a drain structure and a channel structure are formed, a first photoresist layer is not removed and a second photoresist is formed on the first photoresist layer through which a semiconductor structure is formed. Further, n-type amorphous silicon, poly silicon or an organic metallic compound is used in replace of the conventional metal to form the source and drain structures so as to reduce step number of manufacturing for the TFT.

摘要翻译： 提供了薄膜晶体管（TFT）的制造方法。 在制造的TFT中，在源极结构形成漏极结构和沟道结构之后，不去除第一光致抗蚀剂层，并且在形成半导体结构的第一光致抗蚀剂层上形成第二光致抗蚀剂。 此外，使用n型非晶硅，多晶硅或有机金属化合物代替常规金属以形成源极和漏极结构，以便减少TFT的制造步骤数量。

公开(公告)号：US20070238228A1

公开(公告)日：2007-10-11

申请号：US11393436

申请日：2006-03-29

申请人： Ta-Jung Su ,  Chin-Tzu Kao ,  Chia-Che Hsu

发明人： Ta-Jung Su ,  Chin-Tzu Kao ,  Chia-Che Hsu

IPC分类号： H01L21/84

CPC分类号： H01L27/1288 ,  H01L27/1214

摘要： A manufacturing method for a thin film transistor (TFT) is provided. In the manufactured TFT, after a source structure, a drain structure and a channel structure are formed, a first photoresist layer is not removed and a second photoresist is formed on the first photoresist layer through which a semiconductor structure is formed. Further, n-type amorphous silicon, poly silicon or an organic metallic compound is used in replace of the conventional metal to form the source and drain structures so as to reduce step number of manufacturing for the TFT.

摘要翻译： 提供了薄膜晶体管（TFT）的制造方法。 在制造的TFT中，在源极结构形成漏极结构和沟道结构之后，不去除第一光致抗蚀剂层，并且在形成半导体结构的第一光致抗蚀剂层上形成第二光致抗蚀剂。 此外，使用n型非晶硅，多晶硅或有机金属化合物代替常规金属以形成源极和漏极结构，以便减少TFT的制造步骤数量。

公开(公告)号：US07005332B2

公开(公告)日：2006-02-28

申请号：US11019074

申请日：2004-12-21

申请人： Ying-Ming Wu ,  Ta-Jung Su ,  Yi-Tsai Hsu ,  Chin-Tzu Kao

发明人： Ying-Ming Wu ,  Ta-Jung Su ,  Yi-Tsai Hsu ,  Chin-Tzu Kao

IPC分类号： H01L21/336

CPC分类号： H01L29/66765 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/458 ,  H01L29/4908

摘要： A TFT fabrication method includes: forming a gate insulation layer, a semiconductor layer and a metal layer on a substrate in sequence, which cover a gate; patterning the metal layer and the semiconductor layer; forming a patterned first passivation layer on the substrate and exposing the patterned metal layer; forming a pixel electrode layer on the substrate to cover the patterned first passivation layer and the patterned metal layer; forming a patterned photoresist layer on the substrate and exposing the pixel electrode layer above the gate; etching the pixel electrode layer and the patterned metal layer to form a patterned pixel electrode layer, a source, and a drain to form a channel region on the patterned semiconductor layer; forming a second passivation layer on the substrate; and removing the patterned photoresist layer to lift off the second passivation layer, thereby exposing the patterned pixel electrode layer.

摘要翻译： TFT制造方法包括：依次在基板上形成覆盖栅极的栅极绝缘层，半导体层和金属层; 图案化金属层和半导体层; 在所述衬底上形成图案化的第一钝化层并暴露所述图案化的金属层; 在所述衬底上形成像素电极层以覆盖所述图案化的第一钝化层和所述图案化的金属层; 在衬底上形成图案化的光致抗蚀剂层，并使栅极上方的像素电极层曝光; 蚀刻像素电极层和图案化的金属层以形成图案化的像素电极层，源极和漏极，以在图案化的半导体层上形成沟道区域; 在所述衬底上形成第二钝化层; 以及去除图案化的光致抗蚀剂层以剥离第二钝化层，从而暴露图案化的像素电极层。

公开(公告)号：US07049163B1

公开(公告)日：2006-05-23

申请号：US10907003

申请日：2005-03-16

申请人： Chin-Tzu Kao ,  Ta-Jung Su ,  Fu-Liang Lin

发明人： Chin-Tzu Kao ,  Ta-Jung Su ,  Fu-Liang Lin

IPC分类号： H01L21/28

CPC分类号： H01L27/1288 ,  H01L27/124

摘要： A manufacture method of a pixel structure is provided. A gate is formed over a substrate, and a gate insulator layer is formed over the substrate covering the gate. A semiconductor layer is formed over the gate insulator layer and a metal layer is formed over the semiconductor layer. A first mask layer is formed on the metal layer, and the metal layer is patterned to form a source/drain by using the first mask layer as etching mask. Afterward, a second mask layer is formed on the first mask layer and further covers a region between the source/drain. The semiconductor layer is patterned by using the first and second mask layers as etching mask, and then the first and second mask layers are removed. A passivation layer is formed over the substrate. A pixel electrode is formed on the passivation layer. The pixel electrode is electrically connected with the drain.

摘要翻译： 提供了像素结构的制造方法。 栅极形成在衬底上，并且栅极绝缘体层形成在覆盖栅极的衬底上。 半导体层形成在栅极绝缘体层上方，并且在半导体层上形成金属层。 在金属层上形成第一掩模层，通过使用第一掩模层作为蚀刻掩模，将金属层图案化以形成源极/漏极。 之后，在第一掩模层上形成第二掩模层，并进一步覆盖源极/漏极之间的区域。 通过使用第一和第二掩模层作为蚀刻掩模来对半导体层进行构图，然后去除第一和第二掩模层。 钝化层形成在衬底上。 在钝化层上形成像素电极。 像素电极与漏极电连接。

公开(公告)号：US20060079036A1

公开(公告)日：2006-04-13

申请号：US10711835

申请日：2004-10-08

申请人： Ta-Jung Su ,  Chin-Tzu Kao ,  Mi-Cheng Lai ,  Yi-Tsai Hsu

发明人： Ta-Jung Su ,  Chin-Tzu Kao ,  Mi-Cheng Lai ,  Yi-Tsai Hsu

IPC分类号： H01L21/4763

CPC分类号： H01L29/4908 ,  H01L29/66765

摘要： A method of manufacturing a gate, a thin film transistor and a pixel. First, a patterned mask layer is formed on a substrate. The mask layer exposes an area for forming the gate. A gate is formed on the exposed area of the substrate and then the mask layer is removed. The method produces a gate having a well-defined profile. When the method is applied to form a transistor or a pixel, coverage of a subsequently form film layer is improved and point discharge is prevented.

摘要翻译： 一种制造栅极，薄膜晶体管和像素的方法。 首先，在基板上形成图案化的掩模层。 掩模层露出用于形成栅极的区域。 在衬底的暴露区域上形成栅极，然后去除掩模层。 该方法产生具有明确限定的轮廓的门。 当该方法用于形成晶体管或像素时，随后形成的膜层的覆盖率得到改善，并且防止点放电。

公开(公告)号：US20060008952A1

公开(公告)日：2006-01-12

申请号：US11019074

申请日：2004-12-21

申请人： Ying-Ming Wu ,  Ta-Jung Su ,  Yi-Tsai Hsu ,  Chin-Tzu Kao

发明人： Ying-Ming Wu ,  Ta-Jung Su ,  Yi-Tsai Hsu ,  Chin-Tzu Kao

IPC分类号： H01L21/00

CPC分类号： H01L29/66765 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/458 ,  H01L29/4908

摘要： A TFT fabrication method includes: forming a gate insulation layer, a semiconductor layer and a metal layer on a substrate in sequence, which cover a gate; patterning the metal layer and the semiconductor layer; forming a patterned first passivation layer on the substrate and exposing the patterned metal layer; forming a pixel electrode layer on the substrate to cover the patterned first passivation layer and the patterned metal layer; forming a patterned photoresist layer on the substrate and exposing the pixel electrode layer above the gate; etching the pixel electrode layer and the patterned metal layer to form a patterned pixel electrode layer, a source, and a drain to form a channel region on the patterned semiconductor layer; forming a second passivation layer on the substrate; and removing the patterned photoresist layer to lift off the second passivation layer, thereby exposing the patterned pixel electrode layer.

摘要翻译： TFT制造方法包括：依次在基板上形成覆盖栅极的栅极绝缘层，半导体层和金属层; 图案化金属层和半导体层; 在所述衬底上形成图案化的第一钝化层并暴露所述图案化的金属层; 在所述衬底上形成像素电极层以覆盖所述图案化的第一钝化层和所述图案化的金属层; 在衬底上形成图案化的光致抗蚀剂层，并使栅极上方的像素电极层曝光; 蚀刻像素电极层和图案化的金属层以形成图案化的像素电极层，源极和漏极，以在图案化的半导体层上形成沟道区域; 在所述衬底上形成第二钝化层; 以及去除图案化的光致抗蚀剂层以剥离第二钝化层，从而暴露图案化的像素电极层。

公开(公告)号：US07682310B2

公开(公告)日：2010-03-23

申请号：US11757413

申请日：2007-06-04

申请人： Chung-Yuo Wu ,  Yi-Hong Chou ,  Ta-Jung Su ,  Meng-Tsung Lo

发明人： Chung-Yuo Wu ,  Yi-Hong Chou ,  Ta-Jung Su ,  Meng-Tsung Lo

IPC分类号： A61B8/00 ,  A61B8/14

CPC分类号： A61B5/031 ,  A61B8/04 ,  A61B8/0808 ,  A61B8/481

摘要： A method for measuring intracranial pressure in an intracranial area filled with micro-bubbles formed by an injected contrast agent includes: (1) emitting an ultrasound signal having a bandwidth to the intracranial area, (2) receiving an echoed signal from a micro-bubble, (3) performing a spectral analysis on the echoed signal to extract a low-frequency response, which is close to a DC component, (4) calculating a resonant frequency of the micro-bubbles according to the bandwidth and strength of the low-frequency response, the bandwidth of the low-frequency response similar to the bandwidth of the ultrasound signal, (5) calculating a size of the micro-bubble according to the resonant frequency and a property of the contrast agent, and (6) calculating the intracranial pressure.

摘要翻译： 一种用于测量填充有注射造影剂形成的微气泡的颅内区域的颅内压的方法包括：（1）向颅内区域发射具有带宽的超声信号，（2）从微泡接收回波信号 （3）对回波信号进行频谱分析，提取接近直流分量的低频响应，（4）根据低频响应的带宽和强度来计算微气泡的共振频率， 频率响应，低频响应的带宽类似于超声信号的带宽，（5）根据谐振频率和造影剂的性质计算微气泡的尺寸，（6）计算 颅内压

公开(公告)号：US07432564B2

公开(公告)日：2008-10-07

申请号：US11960737

申请日：2007-12-20

申请人： Ta-Jung Su ,  Yea-Chung Shih ,  Cheng-Fang Su

发明人： Ta-Jung Su ,  Yea-Chung Shih ,  Cheng-Fang Su

IPC分类号： H01L29/78

CPC分类号： G02F1/1362 ,  G02F1/13458

摘要： A method for fabricating a pixel structure is provided. First, a gate, a scan line, and a first terminal are formed on a substrate. A gate insulating layer is formed over the substrate to cover the gate, the scan line, and the first terminal. After defining the semiconductor layer, the gate insulating layer is patterned to exposure the first terminal. A transparent conductive layer is formed over the substrate and a patterned photoresist layer is formed on the transparent conductive layer. The transparent conductive layer is patterned using the patterned photoresist layer as a mask, so as to define a source, a drain, a data line, a pixel electrode, a second terminal, and a contact pad. Because only four photomasks are used to implement the above method for fabricating the pixel structure, the cost of manufacturing can be reduced.

摘要翻译： 提供了一种用于制造像素结构的方法。 首先，在基板上形成栅极，扫描线和第一端子。 栅极绝缘层形成在衬底上以覆盖栅极，扫描线和第一端子。 在限定半导体层之后，栅极绝缘层被图案化以暴露第一端子。 在衬底上形成透明导电层，并且在透明导电层上形成图案化的光致抗蚀剂层。 使用图案化的光致抗蚀剂层作为掩模来图案化透明导电层，以便限定源极，漏极，数据线，像素电极，第二端子和接触焊盘。 由于仅使用四个光掩模来实现用于制造像素结构的上述方法，所以可以降低制造成本。

公开(公告)号：US20070003845A1

公开(公告)日：2007-01-04

申请号：US11161311

申请日：2005-07-29

申请人： Ta-Jung Su ,  Shu-Min Wu

发明人： Ta-Jung Su ,  Shu-Min Wu

IPC分类号： G02B5/20

CPC分类号： G02B5/204 ,  G02F1/133512 ,  G02F1/133516

摘要： A color filter substrate including a substrate, a black matrix, a plurality of color filter patterns and a common electrode is provided. The substrate has a plurality of pixel regions thereon. The black matrix comprises a plurality of strip patterns, wherein the strip patterns are disposed between the pixel regions to isolate the pixel regions, and each strip pattern has a side portion distant from the substrate and extending to the edge of the adjacent pixel region. Each color filter pattern is disposed in each pixel region. The common electrode is disposed over the substrate and covering the color filter patterns and the black matrix.

摘要翻译： 提供了包括基板，黑矩阵，多个滤色器图案和公共电极的滤色器基板。 基板上具有多个像素区域。 黑色矩阵包括多个条形图案，其中条形图案设置在像素区域之间以隔离像素区域，并且每个条形图案具有远离基板并延伸到相邻像素区域的边缘的侧部。 每个滤色器图案设置在每个像素区域中。 公共电极设置在衬底上并覆盖滤色器图案和黑色矩阵。

公开(公告)号：US20080111959A1

公开(公告)日：2008-05-15

申请号：US11907361

申请日：2007-10-11

申请人： Ta-Jung Su ,  Yu-Wei Chang ,  Ming-Sheng Chiang

发明人： Ta-Jung Su ,  Yu-Wei Chang ,  Ming-Sheng Chiang

IPC分类号： H01L21/02 ,  G02F1/1335

CPC分类号： G02F1/133553 ,  G02F1/1362 ,  G02F2202/42

摘要： The structure of a trans-reflective liquid crystal display panel includes stacks in longitudinally and two areas in transversely, which are reflective area and transmissive area. A thin-film-transistor layer and a dielectric layer are formed on a substrate in sequential. For the transmissive area, a transparent conductive film, such as a pixel electrode, is formed. For the reflective area, a reflective film with multi-layer is formed on the dielectric layer and then the thin-film-transistor layer. After assembling, the trans-reflective liquid crystal display is complete. The materials of the reflective film with multi-layer and the dielectric layer are similar to have greater adhesion. Each layer of the reflective film with multi-layer includes two sublayers, the first reflective sublayer and the second reflective sublayer, which have the different refractive indexes. By modifying the temperature, pressure, gas flow and power of emitting in manufacturing process can make the refractive indexes of both layers.

摘要翻译： 反射型液晶显示面板的结构纵向包括两个横向的区域，它们是反射区域和透射区域。 依次在基板上形成薄膜晶体管层和电介质层。 对于透射区域，形成诸如像素电极的透明导电膜。 对于反射区域，在介电层上形成多层反射膜，然后形成薄膜晶体管层。 组装后，反射式液晶显示屏完成。 具有多层和介电层的反射膜的材料类似于具有更大的附着力。 具有多层的反射膜的每个层包括具有不同折射率的两个子层，第一反射子层和第二反射子层。 通过改变制造过程中的温度，压力，气体流量和发射功率可以使两层的折射率。