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    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    3.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号：US20120244658A1

    公开(公告)日：2012-09-27

    申请号：US13419468

    申请日：2012-03-14

    申请人： Junichi KOEZUKA ,  Shinji OHNO ,  Yuichi SATO

    发明人： Junichi KOEZUKA ,  Shinji OHNO ,  Yuichi SATO

    IPC分类号： H01L21/425

    CPC分类号： H01L21/425 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

    摘要： A semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability, is provided. In a method for manufacturing a transistor including an oxide semiconductor film, an implantation step where rare gas ions are implanted to the oxide semiconductor film is performed, and the oxide semiconductor film to which rare gas ions are implanted is subjected to a heating step under reduced pressure, in a nitrogen atmosphere, or in a rare gas atmosphere, whereby hydrogen or water contained in the oxide semiconductor film to which rare gas ions are implanted is released; thus, the oxide semiconductor film is highly purified.

    摘要翻译： 提供了包括具有稳定的电特性和高可靠性的氧化物半导体的半导体器件。 在制造包括氧化物半导体膜的晶体管的方法中，执行将稀有气体离子注入到氧化物半导体膜中的注入步骤，并且将减少稀有气体离子的氧化物半导体膜在减小的温度下进行加热步骤 压力，在氮气气氛中或在稀有气体气氛中，由此释放在其中植入稀有气体离子的氧化物半导体膜中所含的氢或水; 因此，氧化物半导体膜被高度纯化。

    IMAGE CAPTURING APPARATUS
    5.
    发明申请
    IMAGE CAPTURING APPARATUS 审中-公开
    图像捕获设备

    公开(公告)号：US20090232486A1

    公开(公告)日：2009-09-17

    申请号：US12401980

    申请日：2009-03-11

    申请人： Yuichi SATO ,  Koichi MORITA ,  Shuji YAHAGI

    发明人： Yuichi SATO ,  Koichi MORITA ,  Shuji YAHAGI

    IPC分类号： G03B15/06

    CPC分类号： G01N21/253 ,  G01N21/6452

    摘要： In the image capturing apparatus which images a micro plate 10 in which a liquid sample is contained as a screening object, an imaging unit 3 having a first optical axis A1 and an illumination unit 4 having a second optical axis A2 are housed in a positional relation therebetween to be vertically overlapped with each other, the micro plate 10 is held in a horizontal attitude at a selected observation position of any one of the first observation position [P1] and the second observation position [P2] which are set at the positions higher or lower than the first optical axis A1, respectively, and an optical path of light irradiated along the first optical axis A1 is bent to any one of an optical path 1 at an upper side or an optical path 2 at a lower side by using an optical path switching unit 7 which is disposed at a middle position [PM]. Therefore, it is possible to image the micro plate 10 from any one of the upper side and the lower side thereof.

    摘要翻译： 在其中容纳有液体样本的微板10作为筛选对象的图像拍摄设备中，具有第一光轴A1和具有第二光轴A2的照明单元4的成像单元3以位置关系 在彼此垂直重叠的状态下，微型板10在设置在高位置的第一观察位置[P1]和第二观察位置[P2]中的任意一个的选定观察位置处保持水平姿态 或低于第一光轴A1，并且沿着第一光轴A1照射的光的光路被弯曲到上侧的光路1或下侧的光路2中的任一个，通过使用 光路切换单元7设置在中间位置[PM]。 因此，可以从其上侧和下侧的任何一个对微板10进行成像。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    6.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
    半导体器件及其制造方法

    公开(公告)号：US20130062600A1

    公开(公告)日：2013-03-14

    申请号：US13604937

    申请日：2012-09-06

    申请人： Junichi KOEZUKA ,  Shinji OHNO ,  Yuichi SATO ,  Sachiaki TEZUKA ,  Tomokazu YOKOI ,  Yusuke SHINO

    发明人： Junichi KOEZUKA ,  Shinji OHNO ,  Yuichi SATO ,  Sachiaki TEZUKA ,  Tomokazu YOKOI ,  Yusuke SHINO

    IPC分类号： H01L29/12 ,  H01L21/336

    CPC分类号： H01L29/242 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/84 ,  H01L27/10873 ,  H01L27/1156 ,  H01L27/1203 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/7869

    摘要： The contact resistance between an oxide semiconductor film and a metal film is reduced. A transistor that uses an oxide semiconductor film and has excellent on-state characteristics is provided. A semiconductor device capable of high-speed operation is provided. In a transistor that uses an oxide semiconductor film, the oxide semiconductor film is subjected to nitrogen plasma treatment. Thus, part of oxygen included in the oxide semiconductor film is replaced with nitrogen, so that an oxynitride region is formed. A metal film is formed in contact with the oxynitride region. The oxynitride region has lower resistance than the other region of the oxide semiconductor film. In addition, the oxynitride region is unlikely to form high-resistance metal oxide at the interface with the contacting metal film.

    摘要翻译： 氧化物半导体膜与金属膜之间的接触电阻降低。 提供了使用氧化物半导体膜并且具有优异的导通状态特性的晶体管。 提供能够进行高速运转的半导体装置。 在使用氧化物半导体膜的晶体管中，对氧化物半导体膜进行氮等离子体处理。 因此，氧化物半导体膜中包含的部分氧被氮代替，从而形成氧氮化物区。 形成与氧氮化物区域接触的金属膜。 氧氮化物区域的电阻比氧化物半导体膜的其他区域低。 此外，氧氮化物区域不可能在与接触金属膜的界面处形成高电阻金属氧化物。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    7.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
    半导体器件及其制造方法

    公开(公告)号：US20130009149A1

    公开(公告)日：2013-01-10

    申请号：US13540029

    申请日：2012-07-02

    申请人： Yuta ENDO ,  Junichi KOEZUKA ,  Yuichi SATO

    发明人： Yuta ENDO ,  Junichi KOEZUKA ,  Yuichi SATO

    IPC分类号： H01L29/786 ,  H01L21/425

    CPC分类号： H01L27/1225 ,  H01L27/1218 ,  H01L29/4908 ,  H01L29/78603 ,  H01L29/78618 ,  H01L29/7869

    摘要： An object of an embodiment of the present invention is to provide a semiconductor device which includes a transistor including an oxide semiconductor with high field-effect mobility, a small variation in threshold voltage, and high reliability. The semiconductor device includes a transistor which includes an insulating substrate from which oxygen is released by heat treatment and an oxide semiconductor film over the insulating substrate. A channel is formed in the oxide semiconductor film. The insulating substrate from which oxygen is released by heat treatment can be manufactured by implanting oxygen ions into at least a region of an insulating substrate on the side provided with the oxide semiconductor film.

    摘要翻译： 本发明的一个实施例的目的是提供一种半导体器件，其包括具有高场效应迁移率的氧化物半导体，阈值电压变化小，可靠性高的晶体管。 半导体器件包括晶体管，其包括通过热处理释放氧的绝缘基板和绝缘基板上的氧化物半导体膜。 在氧化物半导体膜中形成沟道。 通过热处理释放氧的绝缘基板可以通过在设置有氧化物半导体膜的一侧的绝缘基板的至少一个区域中注入氧离子来制造。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    8.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
    半导体器件的半导体器件和制造方法

    公开(公告)号：US20130241072A1

    公开(公告)日：2013-09-19

    申请号：US13607308

    申请日：2012-09-07

    申请人： Yuichi SATO ,  Satoshi Nagashima

    发明人： Yuichi SATO ,  Satoshi Nagashima

    IPC分类号： H01L23/48 ,  H01L21/768

    CPC分类号： H01L21/0337 ,  H01L21/0338 ,  H01L27/11519 ,  H01L27/11524

    摘要： A semiconductor device has 3n, 3n+1, and 3n+2 connector lines that are formed together. The 3n+1 connector line is located between the 3n connector line and the 3n+2 connector line. The first fringe pattern pad is located at the terminus of the 3n connector line and is formed with a wider space than the width of the 3n connector line. The second fringe pattern pad is located at the terminus of the 3n+1 connector line and is formed with a wider width than the width of the 3n+1 connector line. The third fringe pattern pad is located at the terminus of the 3n+2 connector line and is formed with a wider width than the width of the 3n+2 connector line. The second fringe pattern pad is positioned closer to a memory array as compared with the terminus of each connector line with the first and third fringe pattern pads.

    摘要翻译： 半导体器件具有形成在一起的3n，3n + 1和3n + 2连接器线。 3n + 1连接器线位于3n连接线和3n + 2连接线之间。 第一条纹图案垫位于3n连接器线的末端，并且形成有比3n连接器线的宽度更宽的空间。 第二条纹图案垫位于3n + 1连接器线的末端，并且形成有比3n + 1连接器线的宽度宽的宽度。 第三条纹图案垫位于3n + 2连接器线的末端，并且形成有比3n + 2连接器线的宽度宽的宽度。 与具有第一和第三条纹图案垫的每个连接器线的末端相比，第二条纹图案垫位于更靠近存储器阵列的位置。

    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    9.
    发明申请
    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
    半导体器件的制造方法

    公开(公告)号：US20120315735A1

    公开(公告)日：2012-12-13

    申请号：US13482398

    申请日：2012-05-29

    申请人： Junichi KOEZUKA ,  Shinji OHNO ,  Yuichi SATO ,  Shunpei YAMAZAKI

    发明人： Junichi KOEZUKA ,  Shinji OHNO ,  Yuichi SATO ,  Shunpei YAMAZAKI

    IPC分类号： H01L21/336

    CPC分类号： H01L29/7869

    摘要： A transistor using an oxide semiconductor, which has good on-state characteristics is provided. A high-performance semiconductor device including the transistor capable of high-speed response and high-speed operation is provided. In a manufacturing method of the transistor including the oxide semiconductor film including a channel formation region, an insulating film including a metal element is formed over the oxide semiconductor film, and low-resistance regions in which a dopant added through the insulating film by an implantation method is included are formed in the oxide semiconductor film. The channel formation region is positioned between the low-resistance regions in the channel length direction.

    摘要翻译： 提供了具有良好的导通状态特性的使用氧化物半导体的晶体管。 提供了包括能够进行高速响应和高速运行的晶体管的高性能半导体器件。 在包括具有沟道形成区域的氧化物半导体膜的晶体管的制造方法中，在氧化物半导体膜上形成包含金属元素的绝缘膜，以及通过注入在绝缘膜上添加的掺杂剂的低电阻区域 包含的方法形成在氧化物半导体膜中。 沟道形成区域位于沟道长度方向的低电阻区域之间。

    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    10.
    发明申请
    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
    半导体器件的制造方法

    公开(公告)号：US20120315730A1

    公开(公告)日：2012-12-13

    申请号：US13484670

    申请日：2012-05-31

    申请人： Junichi KOEZUKA ,  Shinji OHNO ,  Yuichi SATO ,  Shunpei YAMAZAKI

    发明人： Junichi KOEZUKA ,  Shinji OHNO ,  Yuichi SATO ,  Shunpei YAMAZAKI

    IPC分类号： H01L21/336

    CPC分类号： H01L29/7869 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78618

    摘要： A transistor using an oxide semiconductor, which has good on-state characteristics is provided. A high-performance semiconductor device including the transistor capable of high-speed response and high-speed operation is provided. The transistor includes the oxide semiconductor film including a channel formation region and low-resistance regions in which a metal element and a dopant are included. The channel formation region is positioned between the low-resistance regions in the channel length direction. In a manufacturing method of the transistor, the metal element is added by heat treatment performed in the state where the oxide semiconductor film is in contact with a film including the metal element and the dopant is added through the film including the metal element by an implantation method so that the low resistance regions in which a metal element and a dopant are included are formed.

    摘要翻译： 提供了具有良好的导通状态特性的使用氧化物半导体的晶体管。 提供了包括能够进行高速响应和高速运行的晶体管的高性能半导体器件。 晶体管包括包括沟道形成区域的氧化物半导体膜和包含金属元素和掺杂剂的低电阻区域。 沟道形成区域位于沟道长度方向的低电阻区域之间。 在晶体管的制造方法中，通过在氧化物半导体膜与包含金属元素的膜接触的状态下进行的热处理来添加金属元素，并且通过植入通过包含金属元素的膜添加掺杂剂 形成包含金属元素和掺杂剂的低电阻区域。