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1.发明申请Processing Liquid and Processing Method for Semiconductor Device, and Semiconductor Manufacturing Apparatus 审中-公开半导体器件的处理液体和处理方法以及半导体制造装置公开(公告)号：US20070227567A1
公开(公告)日：2007-10-04
申请号：US11631671
申请日：2005-07-11
IPC分类号： B08B3/00 , C11D9/44 , H01L21/302
CPC分类号： H01L21/02063
摘要： Disclosed is a process liquid which causes only little dissolution of atoms from a semiconductor surface and enables to form a clean and flat semiconductor surface. Also disclosed are a processing method and an apparatus for manufacturing a semiconductor. Specifically disclosed is a process liquid-which causes only little dissolution of atoms from a semiconductor surface by using an aqueous solution containing at least one alcohol or ketone, thereby realizing a clean and flat surface.
摘要翻译： 公开了一种处理液体，其仅使半导体表面的原子几乎不溶解，并且能够形成清洁且平坦的半导体表面。 还公开了一种用于制造半导体的处理方法和装置。 具体公开了一种处理液体，其通过使用含有至少一种醇或酮的水溶液使半导体表面的原子几乎不溶解，从而实现清洁和平坦的表面。
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公开(公告)号：US07179746B2
公开(公告)日：2007-02-20
申请号：US10725063
申请日：2003-12-02
IPC分类号： H01L21/00 , H01L21/302
CPC分类号： H01L21/3185 , H01L21/30604 , H01L21/31654 , H01L21/318 , H01L29/6659
摘要： In a semiconductor device formed on a silicon surface which has a substantial (110) crystal plane orientation, the silicon surface is flattened so that an arithmetical mean deviation of surface Ra is not greater than 0.15 nm, preferably, 0.09 nm, which enables to manufacture an n-MOS transistor of a high mobility. Such a flattened silicon surface is obtained by repeating a deposition process of a self-sacrifice oxide film in an oxygen radical atmosphere and a removing process of the self-sacrifice oxide film, by cleaning the silicon surface in deaerated H2O or a low OH density atmosphere, or by strongly terminating the silicon surface by hydrogen or heavy hydrogen. The deposition process of the self-sacrifice oxide film may be carried out by isotropic oxidation.
摘要翻译： 在形成在具有大致（110）晶面取向的硅表面上的半导体器件中，硅表面变平，使得表面Ra的算术平均偏差不大于0.15nm，优选为0.09nm，这使得能够制造 高迁移率的n-MOS晶体管。 通过在脱氧H 2中清洗硅表面，通过在氧自由基气氛中重复自牺牲氧化物膜的沉积工艺和自牺牲氧化物膜的去除工艺来获得这种扁平化的硅表面， 或低OH密度气氛，或通过氢或重氢强烈地终止硅表面。 自牺牲氧化膜的沉积工艺可以通过各向同性氧化进行。
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公开(公告)号：US08183670B2
公开(公告)日：2012-05-22
申请号：US11651034
申请日：2007-01-09
IPC分类号： H01L29/04
CPC分类号： H01L21/3185 , H01L21/30604 , H01L21/31654 , H01L21/318 , H01L29/6659
摘要： In a semiconductor device formed on a silicon surface which has a substantial (110) crystal plane orientation, the silicon surface is flattened so that an arithmetical mean deviation of surface Ra is not greater than 0.15 nm, preferably, 0.09 nm, which enables to manufacture an n-MOS transistor of a high mobility. Such a flattened silicon surface is obtained by repeating a deposition process of a self-sacrifice oxide film in an oxygen radical atmosphere and a removing process of the self-sacrifice oxide film, by cleaning the silicon surface in deaerated H2O or a low OH density atmosphere, or by strongly terminating the silicon surface by hydrogen or heavy hydrogen. The deposition process of the self-sacrifice oxide film may be carried out by isotropic oxidation.
摘要翻译： 在形成在具有大致（110）晶面取向的硅表面上的半导体器件中，硅表面变平，使得表面Ra的算术平均偏差不大于0.15nm，优选为0.09nm，这使得能够制造 高迁移率的n-MOS晶体管。 通过在脱氧H 2 O或低OH密度气氛中清洗硅表面，通过在氧自由基气氛中重复自牺牲氧化物膜的沉积工艺和自牺牲氧化物膜的去除工艺来获得这种扁平化的硅表面 ，或通过氢或重氢强烈地终止硅表面。 自牺牲氧化膜的沉积工艺可以通过各向同性氧化进行。
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公开(公告)号：US20120208375A1
公开(公告)日：2012-08-16
申请号：US13453206
申请日：2012-04-23
IPC分类号： H01L21/316 , H01L21/314
CPC分类号： H01L21/3185 , H01L21/0214 , H01L21/02142 , H01L21/02164 , H01L21/02175 , H01L21/02238 , H01L21/02271 , H01L21/02301 , H01L21/30604 , H01L21/31654 , H01L21/318 , H01L29/6659
摘要： In a semiconductor device formed on a silicon surface which has a substantial (110) crystal plane orientation, the silicon surface is flattened so that an arithmetical mean deviation of surface Ra is not greater than 0.15 nm, preferably, 0.09 nm, which enables to manufacture an n-MOS transistor of a high mobility. Such a flattened silicon surface is obtained by repeating a deposition process of a self-sacrifice oxide film in an oxygen radical atmosphere and a removing process of the self-sacrifice oxide film, by cleaning the silicon surface in deaerated H2O or a low OH density atmosphere, or by strongly terminating the silicon surface by hydrogen or heavy hydrogen. The deposition process of the self-sacrifice oxide film may be carried out by isotropic oxidation.
摘要翻译： 在形成在具有大致（110）晶面取向的硅表面上的半导体器件中，硅表面变平，使得表面Ra的算术平均偏差不大于0.15nm，优选为0.09nm，这使得能够制造 高迁移率的n-MOS晶体管。 通过在脱氧H 2 O或低OH密度气氛中清洗硅表面，通过在氧自由基气氛中重复自牺牲氧化物膜的沉积工艺和自牺牲氧化物膜的去除工艺来获得这种扁平化的硅表面 ，或通过氢或重氢强烈地终止硅表面。 自牺牲氧化膜的沉积工艺可以通过各向同性氧化进行。
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公开(公告)号：US20070145535A1
公开(公告)日：2007-06-28
申请号：US11651034
申请日：2007-01-09
IPC分类号： H01L29/06
CPC分类号： H01L21/3185 , H01L21/30604 , H01L21/31654 , H01L21/318 , H01L29/6659
摘要： In a semiconductor device formed on a silicon surface which has a substantial (110) crystal plane orientation, the silicon surface is flattened so that an arithmetical mean deviation of surface Ra is not greater than 0.15 nm, preferably, 0.09 nm, which enables to manufacture an n-MOS transistor of a high mobility. Such a flattened silicon surface is obtained by repeating a deposition process of a self-sacrifice oxide film in an oxygen radical atmosphere and a removing process of the self-sacrifice oxide film, by cleaning the silicon surface in deaerated H2O or a low OH density atmosphere, or by strongly terminating the silicon surface by hydrogen or heavy hydrogen. The deposition process of the self-sacrifice oxide film may be carried out by isotropic oxidation.
摘要翻译： 在形成在具有大致（110）晶面取向的硅表面上的半导体器件中，硅表面变平，使得表面Ra的算术平均偏差不大于0.15nm，优选为0.09nm，这使得能够制造 高迁移率的n-MOS晶体管。 通过在脱氧H 2中清洗硅表面，通过在氧自由基气氛中重复自牺牲氧化物膜的沉积工艺和自牺牲氧化物膜的去除工艺来获得这种扁平化的硅表面， 或低OH密度气氛，或通过氢或重氢强烈地终止硅表面。 自牺牲氧化膜的沉积工艺可以通过各向同性氧化进行。
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公开(公告)号：US07928518B2
公开(公告)日：2011-04-19
申请号：US12568415
申请日：2009-09-28
IPC分类号： H01L29/76
CPC分类号： H01L29/7813 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L29/045 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66734
摘要： In a P-channel power MIS field effect transistor formed on a silicon surface having substantially a (110) plane, a gate insulation film is used which provides a gate-to-source breakdown voltage of 10 V or more, and planarizes the silicon surface, or contains Kr, Ar, or Xe.
摘要翻译： 在形成在具有（110）面的硅表面上的P沟道功率MIS场效应晶体管中，使用提供10V以上的栅极 - 源极击穿电压的栅极绝缘膜，并平坦化硅表面 ，或含有Kr，Ar或Xe。
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公开(公告)号：US20100072519A1
公开(公告)日：2010-03-25
申请号：US12568415
申请日：2009-09-28
IPC分类号： H01L29/04
CPC分类号： H01L29/7813 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L29/045 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66734
摘要： In a P-channel power MIS field effect transistor formed on a silicon surface having substantially a (110) plane, a gate insulation film is used which provides a gate-to-source breakdown voltage of 10 V or more, and planarizes the silicon surface, or contains Kr, Ar, or Xe.
摘要翻译： 在形成在具有（110）面的硅表面上的P沟道功率MIS场效应晶体管中，使用提供10V以上的栅极 - 源极击穿电压的栅极绝缘膜，并平坦化硅表面 ，或含有Kr，Ar或Xe。
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公开(公告)号：US07663195B2
公开(公告)日：2010-02-16
申请号：US11285772
申请日：2005-11-22
IPC分类号： H01L29/76
CPC分类号： H01L29/7813 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L29/045 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66734
摘要： In a P-channel power MIS field effect transistor formed on a silicon surface having substantially a (110) plane, a gate insulation film is used which provides a gate-to-source breakdown voltage of 10 V or more, and planarizes the silicon surface, or contains Kr, Ar, or Xe.
摘要翻译： 在形成在具有（110）面的硅表面上的P沟道功率MIS场效应晶体管中，使用提供10V以上的栅极 - 源极击穿电压的栅极绝缘膜，并平坦化硅表面 ，或含有Kr，Ar或Xe。
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公开(公告)号：US20060138538A1
公开(公告)日：2006-06-29
申请号：US11285772
申请日：2005-11-22
IPC分类号： H01L29/76
CPC分类号： H01L29/7813 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L29/045 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66734
摘要： In a P-channel power MIS field effect transistor formed on a silicon surface having substantially a (110) plane, a gate insulation film is used which provides a gate-to-source breakdown voltage of 10 V or more, and planarizes the silicon surface, or contains Kr, Ar, or Xe.
摘要翻译： 在形成在具有（110）面的硅表面上的P沟道功率MIS场效应晶体管中，使用提供10V以上的栅极 - 源极击穿电压的栅极绝缘膜，并平坦化硅表面 ，或含有Kr，Ar或Xe。
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公开(公告)号：US07727415B2
公开(公告)日：2010-06-01
申请号：US11722120
申请日：2005-12-19
申请人： Hirohisa Kikuyama , Masahide Waki , Kanenori Ito , Takanobu Kujime , Keiichi Nii , Rui Hasebe , Hitoshi Tsurumaru , Hideki Nakashima
发明人： Hirohisa Kikuyama , Masahide Waki , Kanenori Ito , Takanobu Kujime , Keiichi Nii , Rui Hasebe , Hitoshi Tsurumaru , Hideki Nakashima
CPC分类号： H01L21/32134 , C23F1/26 , H01L27/124
摘要： A fine treatment agent according to the present invention is a fine treatment agent for the fine treatment of a multilayer film, including a tungsten film and a silicon oxide film comprising at least one from among hydrogen fluoride, nitric acid, ammonium fluoride and ammonium chloride. Thus, a fine treatment agent which makes fine treatment on a multilayer film, including a tungsten film and a silicon oxide film, possible by controlling the etching rate and a fine treatment method using the same can be provided.
摘要翻译： 根据本发明的精细处理剂是用于精细处理包括钨膜和包含氟化氢，硝酸，氟化铵和氯化铵中的至少一种的氧化硅膜的多层膜的精细处理剂。 因此，可以提供通过控制蚀刻速率和使用其的精细处理方法对包括钨膜和氧化硅膜在内的多层膜进行精细处理的精细处理剂。
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