Abstract:
A pattern inspection apparatus is used for inspecting a pattern, such as semiconductor integrated circuit (LSI), liquid crystal panel, and a photomask by using an image of the pattern to-be-inspected and design data for fabricating the pattern to-be-inspected. The pattern inspection apparatus includes a reference pattern generation device for generating a reference pattern represented by one or more lines from design data, an image generation device for generating the image of the pattern to-be-inspected, a detecting device for detecting an edge of the image of the pattern to-be-inspected, and an inspection device for inspecting the pattern to-be-inspected by comparing the edge of the image of the pattern to-be-inspected with the one or more lines of the reference pattern.
Abstract:
A method for producing a liquid crystal display cell comprising processes of applying a sealing agent on a sealing portion of at least one liquid crystal display cell substrate, dropping liquid crystal on the substrate, and bonding substrates to each other under vacuum, wherein the sealing agent comprising a material to be cured and a curing agent is applied to the sealing portion without mixing the material to be cured and the curing agent, and then the substrates are bonded to each other under vacuum at room temperature to cure the sealing agent, is disclosed. A sealing agent for a liquid crystal display cell wherein the above material to be cured comprise a radically polymerizable resin and an organic peroxide, and the above curing agent comprises a radically polymerizable resin and a decomposition accelerator, is also disclosed.
Abstract:
A system and method for precise control of fine-line photolithography is disclosed. The system includes a wafer inspector that detects and measures edges and contours of patterns as produced on a wafer and a lithography simulator. The method calibrates the lithography simulator using multiple measurements and/or edges of patterns on the wafer. The calibrated lithography simulator is used to simulate processing to permit optimization of processing conditions by iterative adjustment and re-simulation. In embodiments, the process conditions optimized include one or more of dose, placement of edges on masks, and placement, shape, and locations of SRAF/OPC structures on the masks. In embodiments, the method includes using the calibrated lithography simulator to match results of production process equipment to those achieved with standard equipment. In embodiments, process data from multiple process simulations is stored in a single image file. The method concludes with fabrication of wafers using the optimized conditions and masks.
Abstract:
A system and method is described for evaluating a wafer fabrication process for forming patterns on a wafer based upon data. Multiple inspection regions are defined on the wafer for analysis. For each inspection region, images of patterns within the inspection region are captured, edges are detected, and lines are registered to lines of a reference pattern automatically generated from the design data. Line widths are determined from the edges. Measured line widths are analyzed to provide statistics and feedback information regarding the fabrication process. In particular embodiments defects are identified as where measured line widths lie outside boundaries determined from the statistics. In particular embodiments, lines of different drawn width and/or orientation are grouped and analyzed separately. Measured line widths may also be grouped for analysis according to geometry such as shape or proximity to other shapes in the inspection region to provide feedback for optical proximity correction rules.
Abstract:
A pattern inspection apparatus is used for inspecting a fine pattern, such as a semiconductor integrated circuit (LSI), a liquid crystal panel, and a photomask (reticle) for the semiconductor or the liquid crystal panel, which are fabricated based on data for fabricating the fine pattern such as design data. The pattern inspection apparatus includes a reference pattern generation device configured to generate a reference pattern represented by one or more lines, comprising one of a line segment and a curve, from the data, an image generation device configured to generate the image of the pattern to-be-inspected, a detecting device configured to detect an edge of the image of the pattern to-be-inspected, and an inspection device configured to inspect the pattern to-be-inspected by comparing the edge of the image of the pattern to-be-inspected with the one or more lines of the reference pattern.
Abstract:
A method for beveling a thin glass plate by simultaneously grinding an edge of the glass using multiple abrasive cup wheels, wherein the edge of the glass plate is extended from the fixturing device. The extension of the glass plate allows the glass plate to bend in response to forces applied by the abrasive cup wheels, thereby reducing the sensitivity of the grinding process to variations in position of the abrasive wheels. The axes of rotation of the abrasive wheels are separated by a distance selected to prevent deflection in the glass plate caused by a first abrasive wheel to influence the deflection in the glass plate caused by a second (adjacent) abrasive wheel.
Abstract:
Apparatus and method evaluate a wafer fabrication process for forming patterns on a wafer based upon design data. Within a recipe database, two or more inspection regions are defined on the wafer for analysis. Patterns within each of the inspection regions are automatically selected based upon tendency for measurement variation resulting from variation in the fabrication process. For each inspection region, at least one image of patterns within the inspection region is captured, a reference pattern, represented by one or both of (a) one or more line segments and (b) one or more curves, is automatically generated from the design data. An inspection unit detects edges within each of the images and registers the image with the reference pattern. One or more measurements are determined from the edges for each of the selected patterns and are processed within a statistical analyzer to form statistical information associated with the fabrication process.
Abstract:
A liquid crystal sealing agent composition that is a one-component light and heat-curable resin composition containing: (1) a solid epoxy resin having a ring and ball method softening temperature of 40° C. or above; (2) an acrylate monomer and/or a methacrylate monomer, or an oligomer thereof; (3) a thermoplastic polymer having a ring and ball method softening temperature of 50 to 120° C., the thermoplastic polymer being obtained by copolymerizing an acrylate monomer and/or a methacrylate monomer with a monomer copolymerizable therewith; (4) a light-activated radical polymerization initiator; and (5) a latent epoxy curing agent. The light and heat curable liquid crystal sealing agent composition is employable in one drop fill, is excellent in properties of a cured product particularly after first-stage light curing, achieves stable cell gap after cell gap formation, permits prevention of contamination of the liquid crystal in second-stage heat curing, is excellent in curing properties in shaded area, and shows superior bonding reliability.
Abstract:
A sealant composition for a plastic liquid crystal display cell is composed of a two-component epoxy resin composition of a base resin liquid and a curing agent liquid, wherein the base resin is a liquid epoxy resin having from 1.7 to 6 in weight average of epoxy groups in one molecule and an ionic conductivity of 2 mS/m or less; and the curing agent has an ionic conductivity of 0.6 mS/m or less. The sealant composition facilitates the fabrication of plastic liquid crystal displays having enhanced durability and sealant properties, particularly in high temperature and high humidity environments.
Abstract:
First, a pattern inspection apparatus detects the first edge from an image of a pattern to-be-inspected. Next, the pattern inspection apparatus conducts matching of the image of the pattern to-be-inspected and the first reference pattern by comparing the first edge and an edge of the first reference pattern. Since, as a result of the matching, a shift quantity S1 can be obtained, and then the first reference pattern is shifted by this shift quantity S1. Subsequently the pattern to-be-inspected is inspected by comparing the first edge and the edge of the first reference pattern so shifted. In this first inspection, pattern deformation quantities are obtained and defects are detected. A shift quantity S2 can be obtained as one of the pattern deformation quantities. Next, in order to detect the second edge from the pattern image to-be-inspected, the corresponding second reference pattern is shifted by a shift quantity S1+S2. Using the second reference pattern so shifted, a profile is obtained on the pattern image to-be-inspected and the second edge is detected. Then, by comparing the second edge and the edge of the second reference pattern so shifted, the pattern to-be-inspected is inspected. Also in this second inspection, the pattern deformation quantities are obtained and defects are detected. A shift quantity S3 can be obtained as one of the pattern deformation quantities.