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55 条记录 (耗时 0.059 秒)

    Apparatus for forming deposited film
    6.
    发明授权
    Apparatus for forming deposited film 失效
    用于形成沉积膜的装置

    公开(公告)号：US06877458B2

    公开(公告)日：2005-04-12

    申请号：US09797566

    申请日：2001-03-05

    申请人： Hiroyuki Ozaki ,  Shotaro Okabe ,  Masahiro Kanai ,  Yuzo Koda ,  Tadashi Hori

    发明人： Hiroyuki Ozaki ,  Shotaro Okabe ,  Masahiro Kanai ,  Yuzo Koda ,  Tadashi Hori

    IPC分类号： C23C16/455 ,  C23C16/44 ,  C23C16/509 ,  C23C16/54 ,  H01L21/205 ,  H01L31/04 ,  C23C16/00

    CPC分类号： H01J37/32834 ,  C23C16/4412 ,  C23C16/5096 ,  C23C16/545

    摘要： To provide an apparatus for forming a deposited film, which is a parallel plate electrode type CVD apparatus, with a discharge vessel receiving a material gas flowing therein and discharging air therefrom, decomposing the material gas by the aid of a plasma generated therein, and depositing the film on the substrate, in which the exhaust port of the material gas exhaust means has an opening wider in the lateral direction than the parallel plate electrode. This structure diminishes the stagnant region of the material gas during the deposited film forming process and controls formation of by-products, to deposit the film uniform in quality and thickness.

    摘要翻译： 为了提供一种用于形成沉积膜的装置，其是平行板电极型CVD装置，放电容器容纳在其中流动的材料气体并从其中排出空气，借助于其中产生的等离子体分解原料气体，并沉积 基板上的材料气体排出装置的排气口的横向方向上的开口比平行板电极宽。 这种结构减少了沉积膜形成过程期间材料气体的停滞区域，并且控制副产物的形成，以使膜在质量和厚度上均匀。

    Process for producing photovoltaic element
    7.
    发明授权
    Process for producing photovoltaic element 有权
    光电元件生产工艺

    公开(公告)号：US06261862B1

    公开(公告)日：2001-07-17

    申请号：US09358930

    申请日：1999-07-23

    申请人： Tadashi Hori ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Naoto Okada ,  Koichiro Moriyama ,  Hiroshi Shimoda ,  Hiroyuki Ozaki

    发明人： Tadashi Hori ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Naoto Okada ,  Koichiro Moriyama ,  Hiroshi Shimoda ,  Hiroyuki Ozaki

    IPC分类号： H01L2100

    CPC分类号： H01L31/076 ,  H01L31/075 ,  H01L31/1804 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

    摘要： A process is provided for producing a photovoltaic element which has at least one pin junction, and a buffering semiconductor layer constituted of plural sublayers between an n-type layer and an i-type layer and/or between an i-type layer and a p-type layer, through production steps of introducing a source material gas into an electric discharge space in a reaction chamber, and decomposing the source material gas by plasma discharge to form a non-monocrystalline semiconductor layer. In the process, in electric discharge generation for formation of at least one of the sublayers, the polarity of the electrode confronting the substrate for formation of a first sublayer and the polarity of the electrode confronting the substrate for formation of a second sublayer adjacent to the first sublayer is made different from each other, or the potential of one of the electrodes is set at zero volt. Thereby, diffusion of the dopant from the p-type layer or the n-type layer into the i-type layer is prevented effectively. The produced photovoltaic element is improved in the output properties, the open-circuit voltage, and the fill factor, and these properties deteriorate less.

    摘要翻译： 提供了一种制造具有至少一个pin结的光电元件的工艺，以及在n型层和i型层之间和/或i型层与p型之间由多个子层构成的缓冲半导体层 型层，通过将源材料气体引入反应室中的放电空间的生产步骤，以及通过等离子体放电来分解原料气体以形成非单晶半导体层。 在该过程中，在用于形成至少一个子层的放电产生中，与用于形成第一子层的衬底相对的电极的极性和与衬底相对的用于形成邻近第二子层的第二子层的电极的极性 使第一子层彼此不同，或者将一个电极的电位设置为零伏。 由此，有效地防止了掺杂剂从p型层或n型层向i型层的扩散。 所产生的光电元件的输出性能，开路电压和填充因子得到改善，并且这些特性劣化较少。

    Vacuum-processing method using a movable cooling plate during processing
    8.
    发明授权
    Vacuum-processing method using a movable cooling plate during processing 失效
    加工过程中使用可移动冷却板的真空加工方法

    公开(公告)号：US06858087B2

    公开(公告)日：2005-02-22

    申请号：US10320430

    申请日：2002-12-17

    申请人： Tadashi Hori ,  Masahiro Kanai ,  Koichiro Moriyama ,  Hiroshi Shimoda ,  Hiroyuki Ozaki

    发明人： Tadashi Hori ,  Masahiro Kanai ,  Koichiro Moriyama ,  Hiroshi Shimoda ,  Hiroyuki Ozaki

    IPC分类号： C23C16/509 ,  C23C16/54 ,  H01L21/00 ,  C23C16/00

    CPC分类号： C23C16/4411 ,  C23C16/5096 ,  C23C16/545 ,  H01L21/67098

    摘要： A vacuum-processing apparatus comprising a vacuum vessel, a processing chamber arranged in the vacuum vessel and a heater for heating a circumferential wall of the processing chamber, wherein a substrate is arranged in the processing chamber and the substrate is vacuum-processed in the processing chamber, characterized in that the vacuum-processing apparatus has a cooling plate located outside the processing chamber and arranged at a position to oppose the circumferential wall of the processing chamber for cooling the circumferential wall of the processing chamber, and a mechanism for moving the cooling plate so as to change a distance between the cooling plate and the circumferential wall of the processing chamber. A vacuum-processing method for performing a surface treatment for a substrate using the vacuum-processing apparatus.

    摘要翻译： 一种真空处理装置，包括真空容器，布置在真空容器中的处理室和用于加热处理室的周壁的加热器，其中在处理室中布置基板，并且在处理中对基板进行真空处理 其特征在于，所述真空处理装置具有位于所述处理室外部的冷却板，并且配置在与所述处理室的周壁对置的位置，用于冷却所述处理室的周壁，以及用于使所述冷却 以便改变冷却板和处理室的周壁之间的距离。 一种使用真空处理装置对基板进行表面处理的真空处理方法。

    Apparatus and method for processing a substrate
    9.
    发明授权
    Apparatus and method for processing a substrate 有权
    用于处理衬底的装置和方法

    公开(公告)号：US06576061B1

    公开(公告)日：2003-06-10

    申请号：US09469797

    申请日：1999-12-22

    申请人： Koichiro Moriyama ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Tadashi Hori ,  Naoto Okada ,  Hiroshi Shimoda ,  Hiroyuki Ozaki

    发明人： Koichiro Moriyama ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Tadashi Hori ,  Naoto Okada ,  Hiroshi Shimoda ,  Hiroyuki Ozaki

    IPC分类号： H01L2100

    CPC分类号： H01L21/67173 ,  H01L21/67236 ,  H01L21/67253 ,  H01L21/6776

    摘要： A substrate-processing method comprising transporting a substrate to pass through a plurality of processing spaces communicated with each other while processing said substrate in each processing space, characterized in that based on an inner pressure of (a) one of said plurality of processing spaces, said inner pressure of said processing space (a) and an inner pressure of (b) at least one of the processing spaces arranged before or after said processing space (a) are controlled. A substrate-processing apparatus comprising a plurality of processing spaces, a substrate transportation means for transporting a substrate to pass through said plurality of processing spaces while said substrate being processed in each processing space, and a pressure gage of measuring an inner pressure of (a) one of said plurality of processing spaces, characterized in that said substrate-processing apparatus has a control unit for controlling the inner pressure of said processing space (a) and that of (b) at least one of the processing spaces arranged before or after said processing space (a) based on information obtained from said pressure gage.

    摘要翻译： 一种基板处理方法，包括在每个处理空间中处理所述基板的同时传送基板以通过彼此连通的多个处理空间，其特征在于，基于所述多个处理空间中的一个的内部压力， 所述处理空间（a）的所述内部压力和所述处理空间（a）之前或之后布置的处理空间中的至少一个处理空间（b）的内部压力被控制。1。一种基板处理设备，包括多个处理空间， 基板传送装置，用于在每个处理空间中处理所述基板的同时传送基板以通过所述多个处理空间;以及压力计，测量所述多个处理空间中的一个处理空间中的（a）的内部压力，其特征在于， 所述基板处理装置具有用于控制所述处理空间（a）和（b）的内部压力的控制单元 基于从所述压力计获得的信息，在所述处理空间（a）之前或之后布置的处理空间中的至少一个。

    Vacuum-processing apparatus using a movable cooling plate during processing
    10.
    发明授权
    Vacuum-processing apparatus using a movable cooling plate during processing 失效
    在加工过程中使用可动冷却板的真空处理装置

    公开(公告)号：US06547922B2

    公开(公告)日：2003-04-15

    申请号：US09772987

    申请日：2001-01-31

    申请人： Tadashi Hori ,  Masahiro Kanai ,  Koichiro Moriyama ,  Hiroshi Shimoda ,  Hiroyuki Ozaki

    发明人： Tadashi Hori ,  Masahiro Kanai ,  Koichiro Moriyama ,  Hiroshi Shimoda ,  Hiroyuki Ozaki

    IPC分类号： H01L2100

    CPC分类号： C23C16/4411 ,  C23C16/5096 ,  C23C16/545 ,  H01L21/67098

    摘要： A vacuum-processing apparatus comprising a vacuum vessel, a processing chamber arranged in the vacuum vessel and a heater for heating a circumferential wall of the processing chamber, wherein a substrate is arranged in the processing chamber and the substrate is vacuum-processed in the processing chamber, characterized in that the vacuum-processing apparatus has a cooling plate arranged at a position to oppose the circumferential wall of the processing chamber for cooling the circumferential wall of the processing chamber, and a mechanism for moving the cooling plate so as to change a distance between the cooling plate and the circumferential wall of the processing chamber.

    摘要翻译： 一种真空处理装置，包括真空容器，布置在真空容器中的处理室和用于加热处理室的周壁的加热器，其中在处理室中布置基板，并且在处理中对基板进行真空处理 其特征在于，所述真空处理装置具有布置在与所述处理室的周壁相对的位置以冷却所述处理室的周壁的位置的冷却板，以及用于使所述冷却板移动以改变所述处理室的机构 冷却板与处理室的周壁之间的距离。