公开(公告)号：US06858087B2

公开(公告)日：2005-02-22

申请号：US10320430

申请日：2002-12-17

申请人： Tadashi Hori ,  Masahiro Kanai ,  Koichiro Moriyama ,  Hiroshi Shimoda ,  Hiroyuki Ozaki

发明人： Tadashi Hori ,  Masahiro Kanai ,  Koichiro Moriyama ,  Hiroshi Shimoda ,  Hiroyuki Ozaki

IPC分类号： C23C16/509 ,  C23C16/54 ,  H01L21/00 ,  C23C16/00

CPC分类号： C23C16/4411 ,  C23C16/5096 ,  C23C16/545 ,  H01L21/67098

摘要： A vacuum-processing apparatus comprising a vacuum vessel, a processing chamber arranged in the vacuum vessel and a heater for heating a circumferential wall of the processing chamber, wherein a substrate is arranged in the processing chamber and the substrate is vacuum-processed in the processing chamber, characterized in that the vacuum-processing apparatus has a cooling plate located outside the processing chamber and arranged at a position to oppose the circumferential wall of the processing chamber for cooling the circumferential wall of the processing chamber, and a mechanism for moving the cooling plate so as to change a distance between the cooling plate and the circumferential wall of the processing chamber. A vacuum-processing method for performing a surface treatment for a substrate using the vacuum-processing apparatus.

摘要翻译： 一种真空处理装置，包括真空容器，布置在真空容器中的处理室和用于加热处理室的周壁的加热器，其中在处理室中布置基板，并且在处理中对基板进行真空处理 其特征在于，所述真空处理装置具有位于所述处理室外部的冷却板，并且配置在与所述处理室的周壁对置的位置，用于冷却所述处理室的周壁，以及用于使所述冷却 以便改变冷却板和处理室的周壁之间的距离。 一种使用真空处理装置对基板进行表面处理的真空处理方法。

公开(公告)号：US06576061B1

公开(公告)日：2003-06-10

申请号：US09469797

申请日：1999-12-22

申请人： Koichiro Moriyama ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Tadashi Hori ,  Naoto Okada ,  Hiroshi Shimoda ,  Hiroyuki Ozaki

发明人： Koichiro Moriyama ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Tadashi Hori ,  Naoto Okada ,  Hiroshi Shimoda ,  Hiroyuki Ozaki

IPC分类号： H01L2100

CPC分类号： H01L21/67173 ,  H01L21/67236 ,  H01L21/67253 ,  H01L21/6776

摘要： A substrate-processing method comprising transporting a substrate to pass through a plurality of processing spaces communicated with each other while processing said substrate in each processing space, characterized in that based on an inner pressure of (a) one of said plurality of processing spaces, said inner pressure of said processing space (a) and an inner pressure of (b) at least one of the processing spaces arranged before or after said processing space (a) are controlled. A substrate-processing apparatus comprising a plurality of processing spaces, a substrate transportation means for transporting a substrate to pass through said plurality of processing spaces while said substrate being processed in each processing space, and a pressure gage of measuring an inner pressure of (a) one of said plurality of processing spaces, characterized in that said substrate-processing apparatus has a control unit for controlling the inner pressure of said processing space (a) and that of (b) at least one of the processing spaces arranged before or after said processing space (a) based on information obtained from said pressure gage.

摘要翻译： 一种基板处理方法，包括在每个处理空间中处理所述基板的同时传送基板以通过彼此连通的多个处理空间，其特征在于，基于所述多个处理空间中的一个的内部压力， 所述处理空间（a）的所述内部压力和所述处理空间（a）之前或之后布置的处理空间中的至少一个处理空间（b）的内部压力被控制。1。一种基板处理设备，包括多个处理空间， 基板传送装置，用于在每个处理空间中处理所述基板的同时传送基板以通过所述多个处理空间;以及压力计，测量所述多个处理空间中的一个处理空间中的（a）的内部压力，其特征在于， 所述基板处理装置具有用于控制所述处理空间（a）和（b）的内部压力的控制单元 基于从所述压力计获得的信息，在所述处理空间（a）之前或之后布置的处理空间中的至少一个。

公开(公告)号：US06547922B2

公开(公告)日：2003-04-15

申请号：US09772987

申请日：2001-01-31

申请人： Tadashi Hori ,  Masahiro Kanai ,  Koichiro Moriyama ,  Hiroshi Shimoda ,  Hiroyuki Ozaki

发明人： Tadashi Hori ,  Masahiro Kanai ,  Koichiro Moriyama ,  Hiroshi Shimoda ,  Hiroyuki Ozaki

IPC分类号： H01L2100

CPC分类号： C23C16/4411 ,  C23C16/5096 ,  C23C16/545 ,  H01L21/67098

摘要： A vacuum-processing apparatus comprising a vacuum vessel, a processing chamber arranged in the vacuum vessel and a heater for heating a circumferential wall of the processing chamber, wherein a substrate is arranged in the processing chamber and the substrate is vacuum-processed in the processing chamber, characterized in that the vacuum-processing apparatus has a cooling plate arranged at a position to oppose the circumferential wall of the processing chamber for cooling the circumferential wall of the processing chamber, and a mechanism for moving the cooling plate so as to change a distance between the cooling plate and the circumferential wall of the processing chamber.

摘要翻译： 一种真空处理装置，包括真空容器，布置在真空容器中的处理室和用于加热处理室的周壁的加热器，其中在处理室中布置基板，并且在处理中对基板进行真空处理 其特征在于，所述真空处理装置具有布置在与所述处理室的周壁相对的位置以冷却所述处理室的周壁的位置的冷却板，以及用于使所述冷却板移动以改变所述处理室的机构 冷却板与处理室的周壁之间的距离。

公开(公告)号：US06261862B1

公开(公告)日：2001-07-17

申请号：US09358930

申请日：1999-07-23

申请人： Tadashi Hori ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Naoto Okada ,  Koichiro Moriyama ,  Hiroshi Shimoda ,  Hiroyuki Ozaki

发明人： Tadashi Hori ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Naoto Okada ,  Koichiro Moriyama ,  Hiroshi Shimoda ,  Hiroyuki Ozaki

IPC分类号： H01L2100

CPC分类号： H01L31/076 ,  H01L31/075 ,  H01L31/1804 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A process is provided for producing a photovoltaic element which has at least one pin junction, and a buffering semiconductor layer constituted of plural sublayers between an n-type layer and an i-type layer and/or between an i-type layer and a p-type layer, through production steps of introducing a source material gas into an electric discharge space in a reaction chamber, and decomposing the source material gas by plasma discharge to form a non-monocrystalline semiconductor layer. In the process, in electric discharge generation for formation of at least one of the sublayers, the polarity of the electrode confronting the substrate for formation of a first sublayer and the polarity of the electrode confronting the substrate for formation of a second sublayer adjacent to the first sublayer is made different from each other, or the potential of one of the electrodes is set at zero volt. Thereby, diffusion of the dopant from the p-type layer or the n-type layer into the i-type layer is prevented effectively. The produced photovoltaic element is improved in the output properties, the open-circuit voltage, and the fill factor, and these properties deteriorate less.

摘要翻译： 提供了一种制造具有至少一个pin结的光电元件的工艺，以及在n型层和i型层之间和/或i型层与p型之间由多个子层构成的缓冲半导体层 型层，通过将源材料气体引入反应室中的放电空间的生产步骤，以及通过等离子体放电来分解原料气体以形成非单晶半导体层。 在该过程中，在用于形成至少一个子层的放电产生中，与用于形成第一子层的衬底相对的电极的极性和与衬底相对的用于形成邻近第二子层的第二子层的电极的极性 使第一子层彼此不同，或者将一个电极的电位设置为零伏。 由此，有效地防止了掺杂剂从p型层或n型层向i型层的扩散。 所产生的光电元件的输出性能，开路电压和填充因子得到改善，并且这些特性劣化较少。

公开(公告)号：US06602347B1

公开(公告)日：2003-08-05

申请号：US09439609

申请日：1999-11-12

申请人： Hiroshi Shimoda ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Tadashi Hori ,  Koichiro Moriyama

发明人： Hiroshi Shimoda ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Tadashi Hori ,  Koichiro Moriyama

IPC分类号： C23C1600

CPC分类号： C23C16/545 ,  G21K5/10 ,  H01L31/03921 ,  H01L31/206 ,  Y02E10/50 ,  Y02P70/521

摘要： A substrate-processing apparatus includes a substrate delivery chamber, a substrate-processing chamber and a substrate takeup chamber, wherein in the substrate delivery chamber, a web substrate and an interleaf are delivered from a delivery bobbin including the web substrate and the interleaf alternately wound while the web substrate delivered is transported into the substrate-processing chamber to process the web substrate therein and the interleaf delivered is wound on an interleaf takeup bobbin. In the substrate takeup chamber, the web substrate transported from the substrate-processing chamber and an interleaf delivered from an interleaf delivery bobbin are alternately wound in a roll form on a substrate takeup bobbin. The substrate-processing apparatus is provided with a mechanism for detecting transport abnormality of the interleaf either in the substrate delivery chamber or in the substrate takeup chamber.

摘要翻译： 基板处理装置包括基板输送室，基板处理室和基板卷取室，其中，在基板输送室中，从基板和交错卷绕的输送线轴输送卷筒纸基板和夹板 而输送的网状基材被输送到基材处理室中以在其中处理网状物基材，并且输送的中间层被卷绕在中间卷取线轴上。 在基板卷取室中，从基板处理室输送的网状基板和从中间输送线轴输送的夹层交替地卷绕在基板卷绕筒管上。 衬底处理装置设置有用于检测衬底输送室或衬底收容室中的插入物的运输异常的机构。

公开(公告)号：US06833155B2

公开(公告)日：2004-12-21

申请号：US10425652

申请日：2003-04-30

申请人： Hiroshi Shimoda ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Tadashi Hori ,  Koichiro Moriyama

发明人： Hiroshi Shimoda ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Tadashi Hori ,  Koichiro Moriyama

IPC分类号： H05H100

CPC分类号： C23C16/545 ,  G21K5/10 ,  H01L31/03921 ,  H01L31/206 ,  Y02E10/50 ,  Y02P70/521

摘要： A substrate-processing method includes at least (a) a step of delivering a web substrate and an interleaf from a substrate delivery bobbin provided in a substrate delivery chamber while the web substrate is transported into a substrate-processing chamber and the interleaf delivered is wound on an interleaf takeup bobbin, and (b) a step of subjecting the web substrate transported into the substrate-processing chamber to desired processing in the substrate-processing chamber. The web substrate processed in the substrate-processing chamber is transported outside the substrate-processing chamber, and transport abnormality of the interleaf in the substrate delivery chamber is detected by a transport abnormality-detecting mechanism.

摘要翻译： 基板处理方法至少包括以下步骤：将幅材基板输送到基板处理室中并且所传送的中间片被卷绕时，从设置在基板输送室中的基板输送线轴输送纸幅基板和插页的步骤 并且（b）使运送到基板处理室中的卷筒纸基板在基板处理室中进行所希望的处理的步骤。 在基板处理室中处理的网状基板被输送到基板处理室外部，并且通过运输异常检测机构来检测基板输送室内的交错异常。

公开(公告)号：US06667240B2

公开(公告)日：2003-12-23

申请号：US09800724

申请日：2001-03-08

申请人： Hiroyuki Ozaki ,  Masahiro Kanai ,  Naoto Okada ,  Koichiro Moriyama ,  Hiroshi Shimoda

发明人： Hiroyuki Ozaki ,  Masahiro Kanai ,  Naoto Okada ,  Koichiro Moriyama ,  Hiroshi Shimoda

IPC分类号： H01L21311

CPC分类号： C23C16/511 ,  C23C16/52 ,  C23C16/545 ,  H01J37/32192 ,  H01J37/32761 ,  H05H1/46 ,  H05H2001/4622

摘要： A method for forming a deposited film, comprising generating plasma in a plurality of successive vacuum containers and continuously forming a deposited film on a belt-like substrate while continuously moving the substrate in its longitudinal direction, wherein an opening of a discharge container is adjusted with an opening adjusting plate having a shape set so as to reduce ununiformity of a deposited film thickness in a width direction of the substrate on the basis of a measurement of a deposition rate distribution. Accordingly, there is provided a method and an apparatus for forming a deposited film which are capable of producing a photovoltaic element without ununiformity in characteristics by depositing semiconductor layers without ununiformity in thickness and quality.

公开(公告)号：US06562400B2

公开(公告)日：2003-05-13

申请号：US09844071

申请日：2001-04-30

申请人： Hideo Tamura ,  Masahiro Kanai ,  Yasuyoshi Takai ,  Hiroshi Shimoda ,  Hidetoshi Tsuzuki

发明人： Hideo Tamura ,  Masahiro Kanai ,  Yasuyoshi Takai ,  Hiroshi Shimoda ,  Hidetoshi Tsuzuki

IPC分类号： B05D312

CPC分类号： C23C14/564 ,  C23C14/562 ,  H01L31/20 ,  Y02E10/50

摘要： A gas adsorptive member is disposed in a space communicating with film deposition chambers, and deposition films are deposited while continuously feeding gas components released from this member, thereby enabling the high quality and uniform deposition films to be formed on the substrate with good reproducibility.

摘要翻译： 气体吸附构件设置在与成膜室连通的空间中，并且沉积膜沉积，同时连续地供给从该构件释放的气体成分，从而能够以良好的再现性在基板上形成高品质和均匀的沉积膜。

公开(公告)号：US06811816B2

公开(公告)日：2004-11-02

申请号：US10195543

申请日：2002-07-16

申请人： Hideo Tamura ,  Masahiro Kanai ,  Yasuyoshi Takai ,  Hiroshi Shimoda ,  Hidetoshi Tsuzuki

发明人： Hideo Tamura ,  Masahiro Kanai ,  Yasuyoshi Takai ,  Hiroshi Shimoda ,  Hidetoshi Tsuzuki

IPC分类号： C23C1600

CPC分类号： C23C14/564 ,  C23C14/562 ,  H01L31/20 ,  Y02E10/50

摘要： A gas adsorptive member is disposed in a space communicating with film deposition chambers, and deposition films are deposited while continuously feeding gas components released from this member, thereby enabling the high quality and uniform deposition films to be formed on the substrate with good reproducibility.

摘要翻译： 气体吸附构件设置在与成膜室连通的空间中，并且沉积膜沉积，同时连续地供给从该构件释放的气体成分，从而能够以良好的再现性在基板上形成高品质和均匀的沉积膜。

公开(公告)号：US08999434B2

公开(公告)日：2015-04-07

申请号：US11626534

申请日：2007-01-24

申请人： Hiroshi Shimoda ,  Hirokazu Wakabayashi ,  Shinji Kinoshita ,  Toshihiro Tanuma ,  Hideki Nakagawa

发明人： Hiroshi Shimoda ,  Hirokazu Wakabayashi ,  Shinji Kinoshita ,  Toshihiro Tanuma ,  Hideki Nakagawa

IPC分类号： B05D5/12 ,  B29C65/00 ,  B32B37/00 ,  H01M8/02 ,  H01M8/10

CPC分类号： H01M8/1004 ,  H01M8/0245 ,  Y02E60/523

摘要： A process is provided whereby a membrane/electrode assembly for polymer electrolyte fuel cells whereby a high output voltage is obtainable within a wide range of current densities.A process for producing a membrane/electrode assembly 1 comprising a first electrode 10 having a first catalyst layer 12 and a first gas diffusion layer 14, a second electrode 20 having a second catalyst layer 22 and a second gas diffusion layer 24, and an electrolyte membrane 30, wherein the first gas diffusion layer 14, a first intermediate having the first catalyst layer 12 formed on the surface of the electrolyte membrane 30 by coating followed by annealing, and a second intermediate having the second catalyst layer 22 formed on the surface of the second gas diffusion layer 24 by coating, are bonded, so that the first catalyst layer 12 is located between the first gas diffusion layer 14 and the electrolyte membrane 30, and the second catalyst layer 22 is located between the second gas diffusion layer 24 and the electrolyte membrane 30.

摘要翻译： 提供了一种方法，由此能够在宽的电流密度范围内获得高输出电压的聚合物电解质燃料电池的膜/电极组件。 包括具有第一催化剂层12和第一气体扩散层14的第一电极10，具有第二催化剂层22和第二气体扩散层24的第二电极20以及电解质 膜30，其中第一气体扩散层14，具有通过涂覆退火而形成在电解质膜30的表面上的第一催化剂层12的第一中间体，以及形成在第二催化剂层22的表面上的第二中间体 通过涂布将第二气体扩散层24接合，使得第一催化剂层12位于第一气体扩散层14和电解质膜30之间，第二催化剂层22位于第二气体扩散层24和 电解质膜30。