公开(公告)号：US20070188185A1

公开(公告)日：2007-08-16

申请号：US11710543

申请日：2007-02-26

申请人： Tae-Min Eom ,  Chung-Sam Jun ,  Yu-Sin Yang ,  Yun-Jung Jee

发明人： Tae-Min Eom ,  Chung-Sam Jun ,  Yu-Sin Yang ,  Yun-Jung Jee

IPC分类号： G01R31/26

CPC分类号： G01R31/1263

摘要： A method of inspecting a leakage current of a dielectric layer on a substrate including a cell array region having a plurality of cell blocks including a patterned structure, the dielectric layer formed on the patterned structure, and a peripheral circuit region includes depositing a corona ion charge on a cell block selected from the plurality of cell blocks and measuring a variance of a surface voltage caused by a leakage current through the dielectric layer on the selected cell block. The variance of the surface voltage is compared with reference data to determine a leakage current characteristic of the dielectric layer.

摘要翻译： 一种在包括具有包括图案化结构的多个单元块，形成在图案化结构上的电介质层和外围电路区域的单元阵列区域的基板上检查介质层的漏电流的方法，包括沉积电晕离子电荷 在从所述多个单元块中选择的单元块上测量由所选择的单元块上的介电层的漏电流引起的表面电压的方差。 将表面电压的方差与参考数据进行比较，以确定电介质层的漏电流特性。

公开(公告)号：US07310140B2

公开(公告)日：2007-12-18

申请号：US10877684

申请日：2004-06-25

申请人： Tae-Min Eom ,  Yu-Sin Yang ,  Chung-Sam Jun ,  Yun-Jung Jee ,  Joung-Soo Kim ,  Moon-Kyung Kim ,  Sang-Mun Chon ,  Sun-Yong Choi

发明人： Tae-Min Eom ,  Yu-Sin Yang ,  Chung-Sam Jun ,  Yun-Jung Jee ,  Joung-Soo Kim ,  Moon-Kyung Kim ,  Sang-Mun Chon ,  Sun-Yong Choi

IPC分类号： G01N21/00

CPC分类号： G01N21/9501 ,  G01N21/47 ,  G01N21/55 ,  G01N2021/556

摘要： In a method and an apparatus for inspecting a wafer surface, a wafer is loaded into a chamber. An incident light including a first light for sensing a vertical position of the wafer and a second light for inspecting the wafer surface is irradiated onto the wafer. The first light is reflected on an inspection region or a next inspection region of the wafer and is detected to control a wafer position. The second light is scattered on the inspection region and is detected to inspect the wafer surface of the inspection region. Position information of a wafer is examined and a position of the wafer is adjusted before inspecting a surface of inspection region of a wafer so as to enable accurate inspection of the wafer surface.

摘要翻译： 在用于检查晶片表面的方法和装置中，将晶片装入室中。 将包括用于感测晶片的垂直位置的第一光和用于检查晶片表面的第二光的入射光照射到晶片上。 第一光被反射在晶片的检查区域或下一个检查区域上，并被检测以控制晶片位置。 第二光被分散在检查区域上，并被检测以检查检查区域的晶片表面。 在检查晶片的检查区域的表面之前检查晶片的位置信息并调整晶片的位置，以便能够精确地检查晶片表面。

公开(公告)号：US07186280B2

公开(公告)日：2007-03-06

申请号：US11175363

申请日：2005-07-07

申请人： Tae-Min Eom ,  Chung-Sam Jun ,  Yu-Sin Yang ,  Yun-Jung Jee

发明人： Tae-Min Eom ,  Chung-Sam Jun ,  Yu-Sin Yang ,  Yun-Jung Jee

IPC分类号： H01L21/00 ,  H01L21/66

CPC分类号： G01R31/1263 ,  Y10T29/41

摘要： A method of inspecting a leakage current of a dielectric layer on a substrate including a cell array region having a plurality of cell blocks including a patterned structure, the dielectric layer formed on the patterned structure, and a peripheral circuit region includes depositing a corona ion charge on a cell block selected from the plurality of cell blocks and measuring a variance of a surface voltage caused by a leakage current through the dielectric layer on the selected cell block. The variance of the surface voltage is compared with reference data to determine a leakage current characteristic of the dielectric layer.

摘要翻译： 一种在包括具有包括图案化结构的多个单元块，形成在图案化结构上的电介质层和外围电路区域的单元阵列区域的基板上检查介质层的漏电流的方法，包括沉积电晕离子电荷 在从所述多个单元块中选择的单元块上测量由所选择的单元块上的介电层的漏电流引起的表面电压的方差。 将表面电压的方差与参考数据进行比较，以确定电介质层的漏电流特性。

公开(公告)号：US20060022698A1

公开(公告)日：2006-02-02

申请号：US11175363

申请日：2005-07-07

申请人： Tae-Min Eom ,  Chung-Sam Jun ,  Yu-Sin Yang ,  Yun-Jung Jee

发明人： Tae-Min Eom ,  Chung-Sam Jun ,  Yu-Sin Yang ,  Yun-Jung Jee

IPC分类号： G01R31/26

CPC分类号： G01R31/1263 ,  Y10T29/41

摘要： A method of inspecting a leakage current of a dielectric layer on a substrate including a cell array region having a plurality of cell blocks including a patterned structure, the dielectric layer formed on the patterned structure, and a peripheral circuit region includes depositing a corona ion charge on a cell block selected from the plurality of cell blocks and measuring a variance of a surface voltage caused by a leakage current through the dielectric layer on the selected cell block. The variance of the surface voltage is compared with reference data to determine a leakage current characteristic of the dielectric layer.

摘要翻译： 一种在包括具有包括图案化结构的多个单元块，形成在图案化结构上的电介质层和外围电路区域的单元阵列区域的基板上检查介质层的漏电流的方法，包括沉积电晕离子电荷 在从所述多个单元块中选择的单元块上测量由所选择的单元块上的介电层的漏电流引起的表面电压的方差。 将表面电压的方差与参考数据进行比较，以确定电介质层的漏电流特性。

公开(公告)号：US06927077B2

公开(公告)日：2005-08-09

申请号：US10704753

申请日：2003-11-12

申请人： Tae-Min Eom ,  Yu-Sin Yang ,  Kwan-Woo Ryu ,  Park-Song Kim ,  Sang-Mun Chon ,  Sun-Yong Choi ,  Chung-Sam Jun

发明人： Tae-Min Eom ,  Yu-Sin Yang ,  Kwan-Woo Ryu ,  Park-Song Kim ,  Sang-Mun Chon ,  Sun-Yong Choi ,  Chung-Sam Jun

IPC分类号： H01L21/66 ,  G01R31/303 ,  G01R31/311 ,  H01L21/00 ,  G01N21/00 ,  G01R31/302

CPC分类号： G01R31/303 ,  G01R31/311

摘要： An apparatus for measuring contamination of a semiconductor substrate includes a chuck for loading a substrate, a position detection means for recognizing a front surface of the loaded substrate to obtain position data of a portion of the substrate to be measured, a first driving part for moving the chuck in accordance with the position data to measure a rear portion of the substrate, and a surface measurement means disposed under the chuck for selectively measuring metal contamination of the substrate at the rear portion of the substrate. In operation, the substrate is loaded onto a chuck, position data of a portion of the substrate to be measured is obtained by recognizing patterns formed on the substrate, the substrate is then moved in accordance with the position data to measure a rear portion of the substrate, and metal contamination is selectively measured at the rear portion of the substrate.

摘要翻译： 一种用于测量半导体衬底的污染的装置，包括用于装载衬底的卡盘，位置检测装置，用于识别所加载的衬底的前表面，以获得要测量的衬底的一部分的位置数据，用于移动的第一驱动部件 所述卡盘根据位置数据来测量所述基板的后部;以及表面测量装置，设置在所述卡盘下方，用于选择性地测量所述基板的后部处的所述基板的金属污染。 在操作中，将基板装载到卡盘上，通过识别形成在基板上的图案来获得要测量的基板的一部分的位置数据，然后根据位置数据移动基板，以测量基板的后部 衬底和金属污染物在衬底的后部被选择性地测量。

公开(公告)号：US07428328B2

公开(公告)日：2008-09-23

申请号：US11180504

申请日：2005-07-12

申请人： Yun-Jung Jee ,  Chung-Sam Jun ,  Yu-Sin Yang ,  Tae-Kyoung Kim

发明人： Yun-Jung Jee ,  Chung-Sam Jun ,  Yu-Sin Yang ,  Tae-Kyoung Kim

IPC分类号： G06K9/00

CPC分类号： G21K7/00

摘要： In a method and apparatus for forming a three-dimensional image for an inspection pattern, a reference intensity function of an inspection X-ray is formed in accordance with a continuous scanning depth, and is differentiated with respect to the scanning depth. The differential reference intensity function is decomposed into a start function and a characteristic function. The differential reference intensity function is then repeatedly integrated while a temporary vertical profile function is substituted for the start function until the temporary intensity of a reference X-ray is within an allowable error range. The temporary vertical profile function satisfying the error range is selected as an optimal vertical profile function. A surface shape is combined to the optimal vertical profile function along a depth of the inspection pattern to thereby form the three-dimensional image for the inspection pattern.

摘要翻译： 在用于形成检查图案的三维图像的方法和装置中，根据连续的扫描深度形成检查X射线的参考强度函数，并且相对于扫描深度是不同的。 差分参考强度函数被分解为起始函数和特征函数。 差分参考强度函数然后被重复地积分，而临时垂直轮廓函数被替换为开始函数，直到参考X射线的临时强度在可允许的误差范围内。 选择满足误差范围的临时垂直剖面函数作为最佳垂直剖面函数。 沿着检查图案的深度将表面形状组合到最佳垂直轮廓函数，从而形成用于检查图案的三维图像。

公开(公告)号：US20070202615A1

公开(公告)日：2007-08-30

申请号：US11702599

申请日：2007-02-06

申请人： Byung-Sug Lee ,  Mi-Sung Lee ,  Yu-Sin Yang ,  Yun-Jung Jee ,  Chung-Sam Jun

发明人： Byung-Sug Lee ,  Mi-Sung Lee ,  Yu-Sin Yang ,  Yun-Jung Jee ,  Chung-Sam Jun

IPC分类号： H01L21/66 ,  G01R31/26

CPC分类号： H01L22/12

摘要： In a method of measuring a critical dimension for conductive structures or openings exposing conductive structures formed on a substrate, a corona ion charge is deposited on the conductive structures and/or an insulating layer having the openings in a measurement region of the substrate. The critical dimension of the conductive structures or the openings may be determined by comparing variations of a surface voltage caused by leakage current through the conductive structures with reference data to thereby improve reliability of the critical dimension measurement.

摘要翻译： 在测量形成在衬底上的导电结构的导电结构或开口的临界尺寸的方法中，电晕离子电荷沉积在导电结构和/或在衬底的测量区域中具有开口的绝缘层上。 可以通过将通过导电结构的漏电流引起的表面电压的变化与参考数据进行比较来确定导电结构或开口的临界尺寸，从而提高临界尺寸测量的可靠性。

公开(公告)号：US20060011837A1

公开(公告)日：2006-01-19

申请号：US11180504

申请日：2005-07-12

申请人： Yun-Jung Jee ,  Chung-Sam Jun ,  Yu-Sin Yang ,  Tae-Kyoung Kim

发明人： Yun-Jung Jee ,  Chung-Sam Jun ,  Yu-Sin Yang ,  Tae-Kyoung Kim

IPC分类号： G21K7/00

CPC分类号： G21K7/00

摘要： In a method and apparatus for forming a three-dimensional image for an inspection pattern, a reference intensity function of an inspection X-ray is formed in accordance with a continuous scanning depth, and is differentiated with respect to the scanning depth. The differential reference intensity function is decomposed into a start function and a characteristic function. The differential reference intensity function is then repeatedly integrated while a temporary vertical profile function is substituted for the start function until the temporary intensity of a reference X-ray is within an allowable error range. The temporary vertical profile function satisfying the error range is selected as an optimal vertical profile function. A surface shape is combined to the optimal vertical profile function along a depth of the inspection pattern to thereby form the three-dimensional image for the inspection pattern.

摘要翻译： 在用于形成检查图案的三维图像的方法和装置中，根据连续的扫描深度形成检查X射线的参考强度函数，并且相对于扫描深度是不同的。 差分参考强度函数被分解为起始函数和特征函数。 差分参考强度函数然后被重复地积分，而临时垂直轮廓函数被替换为开始函数，直到参考X射线的临时强度在可允许的误差范围内。 选择满足误差范围的临时垂直剖面函数作为最佳垂直剖面函数。 沿着检查图案的深度将表面形状组合到最佳垂直轮廓函数，从而形成用于检查图案的三维图像。

公开(公告)号：US20100156446A1

公开(公告)日：2010-06-24

申请号：US12641918

申请日：2009-12-18

申请人： Chun-Yong KIM ,  Mi-Ra Park ,  Yun-Jung Jee ,  Chung-Sam Jun

发明人： Chun-Yong KIM ,  Mi-Ra Park ,  Yun-Jung Jee ,  Chung-Sam Jun

IPC分类号： G01R31/02 ,  G01R31/26

CPC分类号： H01L22/20 ,  H01L22/14

摘要： A method of inspecting a substrate includes measuring a first current flowing between a first region and a second region of the substrate using a first probe. A second current flowing between the first region and the second region of the substrate may be measured using a second probe including a material different from that of the first probe. By comparing the first and second currents, it can be determined whether there is a change in a physical composition of the substrate and a change in a physical configuration of the substrate between the first region and the second region. Thus, when the current change is induced by the change in a physical configuration of the substrate, a determination error that the contaminants on the semiconductor substrate may exist based on the current change may be prevented.

摘要翻译： 检查衬底的方法包括使用第一探针来测量在衬底的第一区域和第二区域之间流动的第一电流。 可以使用包括不同于第一探针的材料的第二探针来测量在衬底的第一区域和第二区域之间流动的第二电流。 通过比较第一和第二电流，可以确定衬底的物理组成是否存在变化以及衬底在第一区域和第二区域之间的物理结构的变化。 因此，当通过基板的物理结构的变化引起电流变化时，可以防止基于电流变化存在半导体衬底上的污染物的确定误差。

公开(公告)号：US07666069B2

公开(公告)日：2010-02-23

申请号：US11783534

申请日：2007-04-10

申请人： Tae-Kyoung Kim ,  Yun-Jung Jee ,  Kyoung-Su Shin ,  Chung-Sam Jun

发明人： Tae-Kyoung Kim ,  Yun-Jung Jee ,  Kyoung-Su Shin ,  Chung-Sam Jun

IPC分类号： B24B47/02

CPC分类号： H01L21/68785 ,  H01L21/6776

摘要： The present invention is directed to a wafer holder and a related wafer conveyor system. The wafer holder holds a wafer and moves horizontally within a chamber. A contact area between the wafer and the wafer holder is reduced, and potential contaminants generated by ear between components of the wafer holder are trapped by an airtight cover. Since the wafer holder moves horizontally while being fixed to a guide rail, the wafer conveyor system reduces friction between the guide rail and the wafer holder.

摘要翻译： 本发明涉及晶片保持器和相关的晶片输送系统。 晶片保持器保持晶片并且在腔室内水平移动。 晶片和晶片保持架之间的接触面积减小，并且由晶片保持器的部件之间的耳朵产生的潜在的污染物被气密的盖子所困住。 由于晶片保持架在固定到导轨的同时水平移动，所以晶片传送系统减小了导轨和晶片保持器之间的摩擦。