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43 条记录 (耗时 0.035 秒)

    Method and apparatus for measuring contamination of a semiconductor substrate
    1.
    发明授权
    Method and apparatus for measuring contamination of a semiconductor substrate 失效
    用于测量半导体衬底的污染物的方法和装置

    公开(公告)号：US06927077B2

    公开(公告)日：2005-08-09

    申请号：US10704753

    申请日：2003-11-12

    申请人： Tae-Min Eom ,  Yu-Sin Yang ,  Kwan-Woo Ryu ,  Park-Song Kim ,  Sang-Mun Chon ,  Sun-Yong Choi ,  Chung-Sam Jun

    发明人： Tae-Min Eom ,  Yu-Sin Yang ,  Kwan-Woo Ryu ,  Park-Song Kim ,  Sang-Mun Chon ,  Sun-Yong Choi ,  Chung-Sam Jun

    IPC分类号： H01L21/66 ,  G01R31/303 ,  G01R31/311 ,  H01L21/00 ,  G01N21/00 ,  G01R31/302

    CPC分类号： G01R31/303 ,  G01R31/311

    摘要： An apparatus for measuring contamination of a semiconductor substrate includes a chuck for loading a substrate, a position detection means for recognizing a front surface of the loaded substrate to obtain position data of a portion of the substrate to be measured, a first driving part for moving the chuck in accordance with the position data to measure a rear portion of the substrate, and a surface measurement means disposed under the chuck for selectively measuring metal contamination of the substrate at the rear portion of the substrate. In operation, the substrate is loaded onto a chuck, position data of a portion of the substrate to be measured is obtained by recognizing patterns formed on the substrate, the substrate is then moved in accordance with the position data to measure a rear portion of the substrate, and metal contamination is selectively measured at the rear portion of the substrate.

    摘要翻译： 一种用于测量半导体衬底的污染的装置，包括用于装载衬底的卡盘，位置检测装置，用于识别所加载的衬底的前表面，以获得要测量的衬底的一部分的位置数据，用于移动的第一驱动部件 所述卡盘根据位置数据来测量所述基板的后部;以及表面测量装置，设置在所述卡盘下方，用于选择性地测量所述基板的后部处的所述基板的金属污染。 在操作中，将基板装载到卡盘上，通过识别形成在基板上的图案来获得要测量的基板的一部分的位置数据，然后根据位置数据移动基板，以测量基板的后部 衬底和金属污染物在衬底的后部被选择性地测量。

    Method and apparatus for inspecting a wafer surface
    3.
    发明授权
    Method and apparatus for inspecting a wafer surface 有权
    检查晶片表面的方法和装置

    公开(公告)号：US07310140B2

    公开(公告)日：2007-12-18

    申请号：US10877684

    申请日：2004-06-25

    申请人： Tae-Min Eom ,  Yu-Sin Yang ,  Chung-Sam Jun ,  Yun-Jung Jee ,  Joung-Soo Kim ,  Moon-Kyung Kim ,  Sang-Mun Chon ,  Sun-Yong Choi

    发明人： Tae-Min Eom ,  Yu-Sin Yang ,  Chung-Sam Jun ,  Yun-Jung Jee ,  Joung-Soo Kim ,  Moon-Kyung Kim ,  Sang-Mun Chon ,  Sun-Yong Choi

    IPC分类号： G01N21/00

    CPC分类号： G01N21/9501 ,  G01N21/47 ,  G01N21/55 ,  G01N2021/556

    摘要： In a method and an apparatus for inspecting a wafer surface, a wafer is loaded into a chamber. An incident light including a first light for sensing a vertical position of the wafer and a second light for inspecting the wafer surface is irradiated onto the wafer. The first light is reflected on an inspection region or a next inspection region of the wafer and is detected to control a wafer position. The second light is scattered on the inspection region and is detected to inspect the wafer surface of the inspection region. Position information of a wafer is examined and a position of the wafer is adjusted before inspecting a surface of inspection region of a wafer so as to enable accurate inspection of the wafer surface.

    摘要翻译： 在用于检查晶片表面的方法和装置中，将晶片装入室中。 将包括用于感测晶片的垂直位置的第一光和用于检查晶片表面的第二光的入射光照射到晶片上。 第一光被反射在晶片的检查区域或下一个检查区域上，并被检测以控制晶片位置。 第二光被分散在检查区域上，并被检测以检查检查区域的晶片表面。 在检查晶片的检查区域的表面之前检查晶片的位置信息并调整晶片的位置，以便能够精确地检查晶片表面。

    Method and apparatus for inspecting defects
    5.
    发明授权
    Method and apparatus for inspecting defects 失效
    检查缺陷的方法和装置

    公开(公告)号：US07271890B2

    公开(公告)日：2007-09-18

    申请号：US10903852

    申请日：2004-07-30

    申请人： Joung-Soo Kim ,  Yu-Sin Yang ,  Moon-Kyung Kim ,  Sang-Mun Chon ,  Sun-Yong Choi ,  Chung-Sam Jun

    发明人： Joung-Soo Kim ,  Yu-Sin Yang ,  Moon-Kyung Kim ,  Sang-Mun Chon ,  Sun-Yong Choi ,  Chung-Sam Jun

    IPC分类号： G01N21/00

    CPC分类号： G01N21/9501 ,  G01N21/55

    摘要： In a method for inspecting a defect in accordance with one aspect of the present invention, an object is divided into a plurality of regions. Reflectivity of each of the plurality of regions is obtained. Amplification ratio for each region is determined using the reflectivity. A light is irradiated onto the regions. A light reflected from a first region is amplified by a first amplification ratio that is determined for the first region. Moving the irradiated light from the first region to a second region is detected. A light reflected from the second region is amplified by a second amplification ratio that is determined for the second region. The amplified lights from the first region and the second region are analyzed to determine an existence of a defect on the object.

    摘要翻译： 在根据本发明的一个方面的用于检查缺陷的方法中，对象被分成多个区域。 获得多个区域中的每一个的反射率。 使用反射率确定每个区域的放大率。 光照射到这些区域上。 从第一区域反射的光被第一区域确定的第一放大率放大。 检测到将照射的光从第一区域移动到第二区域。 从第二区域反射的光被第二区域确定的第二放大率放大。 分析来自第一区域和第二区域的放大的光以确定物体上存在缺陷。

    Method and apparatus for inspecting a substrate
    6.
    发明授权
    Method and apparatus for inspecting a substrate 有权
    用于检查基板的方法和装置

    公开(公告)号：US07113274B2

    公开(公告)日：2006-09-26

    申请号：US10777922

    申请日：2004-02-11

    申请人： Yu-Sin Yang ,  Sang-Mun Chon ,  Sun-Yong Choi ,  Chung-Sam Jun

    发明人： Yu-Sin Yang ,  Sang-Mun Chon ,  Sun-Yong Choi ,  Chung-Sam Jun

    IPC分类号： G01N21/00

    CPC分类号： G01N21/4738 ,  G01N21/94 ,  G01N21/9501 ,  G01N21/956

    摘要： In a method and an apparatus for inspecting defects on a substrate using a light beam, a light source irradiates light beams having different wavelengths onto the substrate. A detector detects first lights scattered from a surface of the substrate and second lights scattered from impurities on the substrate by irradiation of the light beams. An operation unit compares first intensities of the first lights with second intensities of the second lights in order to produce differential values therebetween, and selects a wavelength corresponding to a maximum value of the differential values. An inspection process for inspecting the defects on the substrate is performed using a light beam having the selected wavelength.

    摘要翻译： 在使用光束检查基板上的缺陷的方法和装置中，光源将具有不同波长的光束照射到基板上。 检测器通过照射光束来检测从基板的表面散射的第一光和从基板上的杂质散射的第二光。 操作单元将第一光的第一强度与第二光的第二强度进行比较，以便在其间产生微分值，并选择与差分值的最大值对应的波长。 使用具有所选择的波长的光进行用于检查基板上的缺陷的检查处理。

    Method and apparatus for inspecting defects
    7.
    发明申请
    Method and apparatus for inspecting defects 失效
    检查缺陷的方法和装置

    公开(公告)号：US20050094137A1

    公开(公告)日：2005-05-05

    申请号：US10903852

    申请日：2004-07-30

    申请人： Joung-Soo Kim ,  Yu-Sin Yang ,  Moon-Kyung Kim ,  Sang-Mun Chon ,  Sun-Yong Choi ,  Chung-Sam Jun

    发明人： Joung-Soo Kim ,  Yu-Sin Yang ,  Moon-Kyung Kim ,  Sang-Mun Chon ,  Sun-Yong Choi ,  Chung-Sam Jun

    IPC分类号： H01L21/66 ,  G01N21/00 ,  G01N21/55 ,  G01N21/95

    CPC分类号： G01N21/9501 ,  G01N21/55

    摘要： In a method for inspecting a defect in accordance with one aspect of the present invention, an object is divided into a plurality of regions. Reflectivity of each of the plurality of regions is obtained. Amplification ratio for each region is determined using the reflectivity. A light is irradiated onto the regions. A light reflected from a first region is amplified by a first amplification ratio that is determined for the first region. Moving the irradiated light from the first region to a second region is detected. A light reflected from the second region is amplified by a second amplification ratio that is determined for the second region. The amplified lights from the first region and the second region are analyzed to determine an existence of a defect on the object.

    摘要翻译： 在根据本发明的一个方面的用于检查缺陷的方法中，对象被分成多个区域。 获得多个区域中的每一个的反射率。 使用反射率确定每个区域的放大率。 光照射到这些区域上。 从第一区域反射的光被第一区域确定的第一放大率放大。 检测到将照射的光从第一区域移动到第二区域。 从第二区域反射的光被第二区域确定的第二放大率放大。 分析来自第一区域和第二区域的放大的光以确定物体上存在缺陷。

    Method and apparatus for inspecting defects in multiple regions with different parameters
    9.
    发明授权
    Method and apparatus for inspecting defects in multiple regions with different parameters 有权
    用于检查具有不同参数的多个区域中的缺陷的方法和装置

    公开(公告)号：US07433032B2

    公开(公告)日：2008-10-07

    申请号：US11253028

    申请日：2005-10-17

    申请人： Joung-Soo Kim ,  Sang-Mun Chon ,  Chung-Sam Jun ,  Yu-Sin Yang

    发明人： Joung-Soo Kim ,  Sang-Mun Chon ,  Chung-Sam Jun ,  Yu-Sin Yang

    IPC分类号： G01B15/00 ,  G01N21/00

    CPC分类号： G01N21/95607 ,  G01N21/21 ,  G01N21/47

    摘要： In a method of inspecting defects, a first actual region of an actual object is inspected based on a first characteristic parameter as an inspection condition. A point where an inspection region of the actual object is changed into a second actual region from the first actual region is determined. The second actual region is then inspected based on a second characteristic parameter as the inspection condition. The first and second parameters may include contrast of a light that is reflected from a reference object, intensity of the light, brightness of the light, a size of a minute structure on the reference object, etc. The characteristic parameters of each reference region on the reference object are set. Thus, the defects may be accurately classified so that a time and a cost for reviewing the defects may be markedly reduced.

    摘要翻译： 在检查缺陷的方法中，基于作为检查条件的第一特征参数来检查实际物体的第一实际区域。 确定实际物体的检查区域从第一实际区域变为第二实际区域的点。 然后基于作为检查条件的第二特征参数检查第二实际区域。 第一和第二参数可以包括从参考对象反射的光的对比度，光的强度，光的亮度，参考对象上的微小结构的大小等。每个参考区域的特征参数在 参考对象被设置。 因此，可以将缺陷精确地分类，从而可以显着降低检查缺陷的时间和成本。