摘要:
A method of manufacturing an electronic apparatus including a plastic substrate, which can facilitate in separating the electronic apparatus including the plastic substrate from a stage, an electronic apparatus manufactured using the method, and an apparatus including the stage for use in the method. The method includes: preparing a stage on which a plurality of island-shaped separation lubricators are arranged; disposing the plastic substrate on the stage; forming a device on the plastic substrate; and separating the plastic substrate from the stage.
摘要:
A method of manufacturing an electronic apparatus including a plastic substrate, which can facilitate in separating the electronic apparatus including the plastic substrate from a stage, an electronic apparatus manufactured using the method, and an apparatus including the stage for use in the method. The method includes: preparing a stage on which a plurality of island-shaped separation lubricators are arranged; disposing the plastic substrate on the stage; forming a device on the plastic substrate; and separating the plastic substrate from the stage.
摘要:
A flexible substrate for a TFT includes a metal substrate having a predetermined coefficient of thermal expansion, and a buffer layer on the metal substrate, the buffer layer including a silicon oxide or a silicon nitride, wherein the predetermined coefficient of thermal expansion of the metal substrate satisfies an equation as follows, α f + 0.162 × ( 1 - v f ) E f ≤ α s ≤ α f + 0.889 × ( 1 - v f ) E f Ef representing Young's modulus of the buffer layer, vf representing Poisson's ratio of the buffer layer, αf representing a coefficient of thermal expansion of the buffer layer, and αs representing the predetermined coefficient of thermal expansion of the metal substrate.
摘要翻译:用于TFT的柔性基板包括具有预定热膨胀系数的金属基板和金属基板上的缓冲层,缓冲层包括氧化硅或氮化硅,其中金属基板的预定热膨胀系数 满足以下等式:αf + 0.162×(1-vf)E f≤αs≤αf + 0.889×(1-vf)E f Ef表示缓冲层的杨氏模量,vf表示缓冲器的泊松比 层,表示缓冲层的热膨胀系数的αf,表示金属基板的规定的热膨胀系数的αs。
摘要:
A flexible substrate for a TFT includes a metal substrate having a predetermined coefficient of thermal expansion, and a buffer layer on the metal substrate, the buffer layer including a silicon oxide or a silicon nitride, wherein the predetermined coefficient of thermal expansion of the metal substrate satisfies an equation as follows, α f + 0.162 × ( 1 - v f ) E f ≤ α s ≤ α f + 0.889 × ( 1 - v f ) E f Ef representing Young's modulus of the buffer layer, vf representing Poisson's ratio of the buffer layer, αf representing a coefficient of thermal expansion of the buffer layer, and αs representing the predetermined coefficient of thermal expansion of the metal substrate.
摘要:
A flexible substrate for a TFT includes a metal substrate having a predetermined coefficient of thermal expansion, and a buffer layer on the metal substrate, the buffer layer including a silicon oxide or a silicon nitride, wherein the predetermined coefficient of thermal expansion of the metal substrate satisfies an equation as follows, α f + 0.162 × ( 1 - v f ) E f ≤ α s ≤ α f + 0.889 × ( 1 - v f ) E f Ef representing Young's modulus of the buffer layer, vf representing Poisson's ratio of the buffer layer, αf representing a coefficient of thermal expansion of the buffer layer, and αs representing the predetermined coefficient of thermal expansion of the metal substrate.
摘要:
A method for manufacturing a flexible display is provided. A sacrificial layer is formed on a substrate support, the sacrificial layer having an absorptivity of 1 E+02 to 1 E+06 cm−1 as a function of the wavelength of a laser. A flexible substrate is formed on the sacrificial layer. A device is formed on the flexible substrate. Laser irradiating is performed on a rear of the substrate support for detaching the sacrificial layer from the flexible substrate.
摘要:
An organic light emitting display (OLED), which includes a display unit and a controlling unit, is provided. The display unit includes an organic light emission layer and a transparent thin film transistor (TFT) to drive the organic light emission layer, and the display unit emits light into two opposite surfaces (upper and lower surfaces). The controlling unit includes an electro-optical layer that is capable of being switched from one state to another state by applying voltage to the layer. The controlling unit controls transmission of light emitted from the display unit. Therefore the flat panel display of the present invention is capable of displaying an image in one surface or in two surfaces. The selection of surface of image display can be manually or automatically controlled by a user. The controlling unit can includes a liquid crystal device, an electrophoretic device, or an electrochromic device.
摘要:
An organic light emitting display (OLED), which includes a display unit and a controlling unit, is provided. The display unit includes an organic light emission layer and a transparent thin film transistor (TFT) to drive the organic light emission layer, and the display unit emits light into two opposite surfaces (upper and lower surfaces). The controlling unit includes an electro-optical layer that is capable of being switched from one state to another state by applying voltage to the layer. The controlling unit controls transmission of light emitted from the display unit. Therefore the flat panel display of the present invention is capable of displaying an image in one surface or in two surfaces. The selection of surface of image display can be manually or automatically controlled by a user. The controlling unit can includes a liquid crystal device, an electrophoretic device, or an electrochromic device.
摘要:
An oxide semiconductor thin film transistor and a flat panel display device incorporating the same oxide semiconductor thin film transistor. The thin film transistor includes a gate electrode formed on the substrate, a gate insulating layer formed on the substrate and covering the gate electrode, an oxide semiconductor layer formed on the gate insulating layer and covering the gate electrode, a titanium layer formed in a source region and a drain region of the oxide semiconductor layer, and source and drain electrodes respectively coupled to the source region and the drain region through the titanium layer and made of copper. The titanium layer reduces the contact resistance between the source and drain electrodes made of copper and the oxide semiconductor layer, forms a stable interface junction therebetween, and blocks a diffusion of copper.
摘要:
Disclosed is an organic light emitting display device and a method of manufacturing the same. The organic light emitting display device includes the thin film transistor of the drive unit that has the activation layer formed in a structure where the first oxide semiconductor layer and the second oxide semiconductor layer are stacked, the thin film transistor of the pixel unit that has the activation layer formed of the second oxide semiconductor layer, and the organic light emitting diode coupled to the thin film transistor of the pixel unit. The thin film transistor of the drive unit has channel formed on the first oxide semiconductor layer having a higher carrier concentration than the second oxide semiconductor layer, having a high charge mobility, and the thin film transistor of the pixel unit has a channel formed on the second oxide semiconductor layer, having a stable and uniform functional property.