公开(公告)号：US08680531B2

公开(公告)日：2014-03-25

申请号：US13115883

申请日：2011-05-25

申请人： Jae-Seob Lee ,  Yong-Hwan Park ,  Young-Shin Pyo

发明人： Jae-Seob Lee ,  Yong-Hwan Park ,  Young-Shin Pyo

IPC分类号： H01L27/14

CPC分类号： H01L27/127 ,  G02F1/133351 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1266 ,  H01L29/78603 ,  H01L51/003

摘要： A thin film transistor according to an example embodiment includes: a substrate body; a semiconductor layer formed on the substrate body and comprising a polycrystalline silicon film having a surface resistance from about 2000 ohm/sq to about 8000 ohm/sq; and a source electrode and a drain electrode each contacted with the semiconductor layer and comprising a metallic material having a resistance from about 350 to about 2000 ohm.

公开(公告)号：US20130092937A1

公开(公告)日：2013-04-18

申请号：US13431869

申请日：2012-03-27

申请人： Jae-Seob Lee ,  Chang-Yong Jeong ,  Yong-Hwan Park ,  Kyung-Mi Kwon

发明人： Jae-Seob Lee ,  Chang-Yong Jeong ,  Yong-Hwan Park ,  Kyung-Mi Kwon

IPC分类号： H01L23/544

CPC分类号： G09G3/006 ,  G09G2300/0413 ,  G09G2330/12

摘要： A display device according to an exemplary embodiment of the present invention includes a display portion including a plurality of display pixels displaying an image and a dummy portion including a plurality of dummy pixels formed in a periphery region of the display portion. An electrostatic test element group (TEG) may be formed in at least one of the dummy pixels.

摘要翻译： 根据本发明的示例性实施例的显示装置包括显示部分，该显示部分包括显示图像的多个显示像素和包括形成在显示部分的外围区域中的多个虚拟像素的虚拟部分。 静电测试元件组（TEG）可以形成在至少一个虚拟像素中。

公开(公告)号：US08376017B2

公开(公告)日：2013-02-19

申请号：US12138313

申请日：2008-06-12

申请人： Jae-Seob Lee ,  Jin-Ho Kwack ,  Tae-Kyung Ahn

发明人： Jae-Seob Lee ,  Jin-Ho Kwack ,  Tae-Kyung Ahn

IPC分类号： B32B38/10

CPC分类号： B32B38/10 ,  B32B37/10 ,  B32B38/0008 ,  B32B38/162 ,  B32B38/164 ,  B32B43/006 ,  B32B2309/02 ,  B32B2309/12 ,  B32B2310/0843 ,  B32B2310/14 ,  Y10T156/1153 ,  Y10T156/1184 ,  Y10T156/1911 ,  Y10T156/1967

摘要： A flexible substrate bonding and debonding apparatus is disclosed. In one embodiment, the apparatus includes i) a chamber, ii) a lower chuck disposed in a lower portion of the chamber and having a lower heating unit and a cooling conduit built therein, iii) an upper chuck disposed above the lower chuck and having an upper heating unit built therein, iv) a pressurizing unit disposed above the upper chuck and v) a separating unit corresponding to either side of bonding surfaces of a support substrate and a flexible substrate which are disposed between the lower chuck and the upper chuck. The flexible substrate bonding and debonding apparatus can pressurize the flexible substrate and the support substrate simultaneously using a heat-treatment process. Therefore, the flexible substrate can be more reliably bonded and debonded even at low temperature.

摘要翻译： 公开了一种柔性基板接合和剥离装置。 在一个实施例中，该设备包括：i）室，ii）设置在室的下部中并具有下部加热单元和内置冷却管道的下卡盘，iii）设置在下卡盘上方的上卡盘， 其中内置上加热单元，iv）设置在上卡盘上方的加压单元，以及v）对应于设置在下卡盘和上卡盘之间的支撑基板和柔性基板的接合表面的任一侧的分离单元。 柔性基板接合和脱粘装置可以使用热处理工艺同时对柔性基板和支撑基板加压。 因此，即使在低温下，柔性基板也可以更可靠地结合和剥离。

公开(公告)号：US08221889B2

公开(公告)日：2012-07-17

申请号：US12379648

申请日：2009-02-26

申请人： Jae-Seob Lee ,  Dong-Un Jin ,  Yeon-Gon Mo ,  Tae-Woong Kim

发明人： Jae-Seob Lee ,  Dong-Un Jin ,  Yeon-Gon Mo ,  Tae-Woong Kim

IPC分类号： B32B15/04 ,  H05H1/24

CPC分类号： H01L29/78603 ,  Y10T428/12431 ,  Y10T428/31678

摘要： A flexible substrate for a TFT includes a metal substrate having a predetermined coefficient of thermal expansion, and a buffer layer on the metal substrate, the buffer layer including a silicon oxide or a silicon nitride, wherein the predetermined coefficient of thermal expansion of the metal substrate satisfies an equation as follows, α f + 0.162 × ( 1 - v f ) E f ≤ α s ≤ α f + 0.889 × ( 1 - v f ) E f Ef representing Young's modulus of the buffer layer, vf representing Poisson's ratio of the buffer layer, αf representing a coefficient of thermal expansion of the buffer layer, and αs representing the predetermined coefficient of thermal expansion of the metal substrate.

摘要翻译： 用于TFT的柔性基板包括具有预定热膨胀系数的金属基板和金属基板上的缓冲层，缓冲层包括氧化硅或氮化硅，其中金属基板的预定热膨胀系数 满足以下等式：αf + 0.162×（1-vf）E f≤αs≤αf + 0.889×（1-vf）E f Ef表示缓冲层的杨氏模量，vf表示缓冲器的泊松比 层，表示缓冲层的热膨胀系数的αf，表示金属基板的规定的热膨胀系数的αs。

公开(公告)号：US08211725B2

公开(公告)日：2012-07-03

申请号：US13040906

申请日：2011-03-04

申请人： Yong-Hwan Park ,  Jae-Seob Lee ,  Moo-Jin Kim ,  Young-Shin Pyo ,  Sang-Joon Seo ,  Hoon-Kee Min ,  Dong-Un Jin

发明人： Yong-Hwan Park ,  Jae-Seob Lee ,  Moo-Jin Kim ,  Young-Shin Pyo ,  Sang-Joon Seo ,  Hoon-Kee Min ,  Dong-Un Jin

IPC分类号： H01L21/00

CPC分类号： H01L27/1266 ,  H01L27/1218 ,  H01L27/1292 ,  H01L2251/566

摘要： A method of manufacturing a flexible display device is disclosed. The method includes arranging a first substrate having a plurality of depression units, forming a first plastic film in each of the plurality of depression units, forming a thin film transistor (TFT) on the first plastic film, forming a display device on the TFT, where the display device is configured to be electrically connected to the TFT, encapsulating an upper portion of the display device, cutting the first substrate, and separating the first substrate from the first plastic film.

摘要翻译： 公开了制造柔性显示装置的方法。 该方法包括布置具有多个凹陷单元的第一基板，在多个凹陷单元中的每一个中形成第一塑料膜，在第一塑料膜上形成薄膜晶体管（TFT），在TFT上形成显示装置， 其中所述显示装置被配置为电连接到所述TFT，封装所述显示装置的上部，切割所述第一基板，以及将所述第一基板与所述第一塑料膜分离。

公开(公告)号：US08187960B2

公开(公告)日：2012-05-29

申请号：US13227091

申请日：2011-09-07

申请人： Jae-Seob Lee ,  Kyu-Sung Lee ,  Hyo-Jin Kim ,  Jae-Kyeong Jeong ,  Jin-Ho Kwack

发明人： Jae-Seob Lee ,  Kyu-Sung Lee ,  Hyo-Jin Kim ,  Jae-Kyeong Jeong ,  Jin-Ho Kwack

IPC分类号： H01L21/8238 ,  H01L21/30

CPC分类号： B32B38/162 ,  B32B2309/65 ,  B32B2311/00 ,  B32B2457/00 ,  H01L51/003 ,  H01L51/0035 ,  H01L51/0036 ,  H01L51/0059 ,  H01L51/0067 ,  H01L51/007 ,  H01L51/0078 ,  H01L51/0079 ,  H01L51/0085 ,  H01L51/56 ,  H01L2227/326 ,  H01L2251/5338

摘要： A method of joining a flexible layer and a support includes forming a first metal layer on one surface of the flexible layer, forming a second metal layer on one surface of the support, cleaning the first metal layer and the second metal layer, and joining the first metal layer to the second metal layer, such that the first metal layer is between the flexible layer and the second metal layer.

摘要翻译： 一种接合柔性层和支撑体的方法包括在柔性层的一个表面上形成第一金属层，在支撑体的一个表面上形成第二金属层，清洗第一金属层和第二金属层， 第一金属层到第二金属层，使得第一金属层在柔性层和第二金属层之间。

公开(公告)号：US20110297952A1

公开(公告)日：2011-12-08

申请号：US13115883

申请日：2011-05-25

申请人： Jae-Seob LEE ,  Yong-Hwan Park ,  Young-Shin Pyo

发明人： Jae-Seob LEE ,  Yong-Hwan Park ,  Young-Shin Pyo

IPC分类号： H01L33/08 ,  H01L33/16 ,  H01L29/786

CPC分类号： H01L27/127 ,  G02F1/133351 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1266 ,  H01L29/78603 ,  H01L51/003

摘要： A thin film transistor according to an example embodiment includes: a substrate body; a semiconductor layer formed on the substrate body and comprising a polycrystalline silicon film having a surface resistance from about 2000 ohm/sq to about 8000 ohm/sq; and a source electrode and a drain electrode each contacted with the semiconductor layer and comprising a metallic material having a resistance from about 350 to about 2000 ohm.

摘要翻译： 根据示例实施例的薄膜晶体管包括：基板主体; 形成在所述基板主体上并包括具有约2000欧姆/平方至约8000欧姆/平方的表面电阻的多晶硅膜的半导体层; 以及每个与半导体层接触并且包括具有约350至约2000欧姆电阻的金属材料的源电极和漏电极。

公开(公告)号：US20110193067A1

公开(公告)日：2011-08-11

申请号：US12895315

申请日：2010-09-30

申请人： Jae-Seob LEE ,  Dong-Un JIN

发明人： Jae-Seob LEE ,  Dong-Un JIN

IPC分类号： H01L51/30

CPC分类号： H01L51/5256 ,  H01L2251/558

摘要： An organic light-emitting device including a barrier layer that includes a silicon oxide layer and a silicon-rich silicon nitride layer. The organic light-emitting device includes a flexible substrate that includes a barrier layer and plastic films disposed under and over the barrier layer. The barrier layer includes a silicon-rich silicon nitride layer and a silicon oxide layer. The order in which the silicon-rich silicon nitride layer and the silicon oxide layer are stacked is not limited and the silicon oxide layer may be first formed and then the silicon-rich silicon nitride layer may be stacked on the silicon oxide layer. The silicon-rich silicon nitride layer has a refractive index of 1.81 to 1.85.

摘要翻译： 一种包括具有氧化硅层和富硅氮化硅层的阻挡层的有机发光装置。 有机发光装置包括柔性基板，其包括阻挡层和设置在阻挡层下方和上方的塑料膜。 阻挡层包括富含硅的氮化硅层和氧化硅层。 堆积富硅的氮化硅层和氧化硅层的顺序没有限制，可以首先形成氧化硅层，然后可以在硅氧化物层上层叠富硅的氮化硅层。 富硅氮化硅层的折射率为1.81〜1.85。

公开(公告)号：US20110012104A1

公开(公告)日：2011-01-20

申请号：US12656264

申请日：2010-01-22

申请人： Ki-Nyeng Kang ,  Jae-Seob Lee ,  Dong-Un Jin

发明人： Ki-Nyeng Kang ,  Jae-Seob Lee ,  Dong-Un Jin

IPC分类号： H01L33/00 ,  H01L29/786 ,  H01L21/34 ,  H01L21/28

CPC分类号： H01L27/12 ,  H01L27/1225 ,  H01L27/1251

摘要： An organic light emitting display includes data lines and scan lines intersecting each other, a scan driving unit for supplying a scan signal to the scan lines, a data driving unit for supplying a data signal to the data lines, and pixels defined at intersection points of the data and scan lines, each pixel having an organic light emitting diode, a first TFT with an inverted staggered top gate structure and connected to the organic light emitting diode, the first TFT including an oxide semiconductor as an active layer, and a second TFT with an inverted staggered bottom gate structure and configured to receive the scan signal from the scan lines, the second TFT including an oxide semiconductor as an active layer.

摘要翻译： 有机发光显示器包括彼此相交的数据线和扫描线，用于向扫描线提供扫描信号的扫描驱动单元，用于向数据线提供数据信号的数据驱动单元，以及在数据线的交点处定义的像素 数据和扫描线，每个像素具有有机发光二极管，具有倒置交错顶栅结构并连接到有机发光二极管的第一TFT，第一TFT包括氧化物半导体作为有源层，第二TFT 具有倒置交错的底栅结构并被配置为从扫描线接收扫描信号，第二TFT包括氧化物半导体作为有源层。

公开(公告)号：US20090256154A1

公开(公告)日：2009-10-15

申请号：US12379648

申请日：2009-02-26

申请人： Jae-Seob Lee ,  Dong-Un Jin ,  Yeon-Gon Mo ,  Tae-Woong Kim

发明人： Jae-Seob Lee ,  Dong-Un Jin ,  Yeon-Gon Mo ,  Tae-Woong Kim

IPC分类号： H01L29/786

CPC分类号： H01L29/78603 ,  Y10T428/12431 ,  Y10T428/31678

摘要： A flexible substrate for a TFT includes a metal substrate having a predetermined coefficient of thermal expansion, and a buffer layer on the metal substrate, the buffer layer including a silicon oxide or a silicon nitride, wherein the predetermined coefficient of thermal expansion of the metal substrate satisfies an equation as follows, α f + 0.162 × ( 1 - v f ) E f ≤ α s ≤ α f + 0.889 × ( 1 - v f ) E f Ef representing Young's modulus of the buffer layer, vf representing Poisson's ratio of the buffer layer, αf representing a coefficient of thermal expansion of the buffer layer, and αs representing the predetermined coefficient of thermal expansion of the metal substrate.

摘要翻译： 用于TFT的柔性基板包括具有预定热膨胀系数的金属基板和金属基板上的缓冲层，缓冲层包括氧化硅或氮化硅，其中金属基板的预定热膨胀系数 满足以下等式：αf + 0.162 x（1-vf）E fαsαf + 0.889 x（1-vf）E f Ef表示缓冲层的杨氏模量，vf表示缓冲层的泊松比， alfaf表示缓冲层的热膨胀系数，α表示金属基板的预定的热膨胀系数。