公开(公告)号：US10573573B2

公开(公告)日：2020-02-25

申请号：US15925790

申请日：2018-03-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-Huan Chiu ,  Chun-Jen Chen ,  Chen-Shien Chen ,  Kuo-Chio Liu ,  Kuo-Hui Chang ,  Chung-Yi Lin ,  Hsi-Kuei Cheng ,  Yi-Jen Lai

IPC: H01L23/31 ,  H01L25/065 ,  H01L25/07 ,  H01L25/11 ,  H01L21/56 ,  H01L23/00 ,  H01L25/075

Abstract: A package includes a die, a plurality of first conductive structures, a plurality of second conductive structures, an encapsulant, and a redistribution structure. The die has an active surface and a rear surface opposite to the active surface. The first conductive structures and the second conductive structures surround the die. The first conductive structures include cylindrical columns and the second conductive structures include elliptical columns or conical frustums. The encapsulant encapsulates the die, the first conductive structures, and the second conductive structures. The redistribution structure is over the active surface of the die and the encapsulant. The redistribution structure is electrically connected to the die, the first conductive structures, and the second conductive structures.

公开(公告)号：US20190295913A1

公开(公告)日：2019-09-26

申请号：US15925790

申请日：2018-03-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-Huan Chiu ,  Chun-Jen Chen ,  Chen-Shien Chen ,  Kuo-Chio Liu ,  Kuo-Hui Chang ,  Chung-Yi Lin ,  Hsi-Kuei Cheng ,  Yi-Jen Lai

IPC: H01L23/31 ,  H01L21/56 ,  H01L23/00

Abstract: A package includes a die, a plurality of first conductive structures, a plurality of second conductive structures, an encapsulant, and a redistribution structure. The die has an active surface and a rear surface opposite to the active surface. The first conductive structures and the second conductive structures surround the die. The first conductive structures include cylindrical columns and the second conductive structures include elliptical columns or conical frustums. The encapsulant encapsulates the die, the first conductive structures, and the second conductive structures. The redistribution structure is over the active surface of the die and the encapsulant. The redistribution structure is electrically connected to the die, the first conductive structures, and the second conductive structures.

公开(公告)号：US20230275047A1

公开(公告)日：2023-08-31

申请号：US17661154

申请日：2022-04-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Jen Chen ,  Wei-Chun Pai ,  Cheng Wei Ho ,  Sheng-Huan Chiu

IPC: H01L23/00

CPC classification number: H01L24/02 ,  H01L24/05 ,  H01L24/94 ,  H01L24/03 ,  H01L24/13 ,  H01L2224/02313 ,  H01L2224/02331 ,  H01L2224/0235 ,  H01L2224/02381 ,  H01L2224/0239 ,  H01L2224/02373 ,  H01L2224/02375 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L24/04 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05012 ,  H01L2224/05015 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05184 ,  H01L2224/05166 ,  H01L2224/05558 ,  H01L2224/05564 ,  H01L2224/05569 ,  H01L24/06 ,  H01L2224/06138 ,  H01L2224/05582 ,  H01L2224/05647 ,  H01L24/11 ,  H01L2224/1146 ,  H01L2224/13082 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13124 ,  H01L24/16 ,  H01L2224/16148 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L24/81 ,  H01L2224/81801 ,  H01L24/32 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L24/92 ,  H01L2224/92125 ,  H01L2224/94

Abstract: A method includes forming a first polymer layer over a plurality of metal pads, and patterning the first polymer layer to forming a plurality of openings in the first polymer layer. The plurality of metal pads are exposed through the plurality of openings. A plurality of conductive vias are formed in the plurality of openings. A plurality of conductive pads are formed over and contacting the plurality of conductive vias. A conductive pad in the plurality of conductive pads is laterally shifted from a conductive via directly underlying, and in physical contact with, the conductive pad. A second polymer layer is formed to cover and in physical contact with the plurality of conductive pads.

公开(公告)号：US20230245991A1

公开(公告)日：2023-08-03

申请号：US17743086

申请日：2022-05-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Chun-Jen Chen ,  Wei-Chun Pai ,  Cheng Wei Ho ,  Sheng-Huan Chiu

IPC: H01L23/00 ,  H01L25/065 ,  H01L23/538

CPC classification number: H01L24/24 ,  H01L25/0655 ,  H01L23/5381 ,  H01L23/5386 ,  H01L24/19 ,  H01L23/49816

Abstract: In an embodiment, a device includes: an integrated circuit die including a die connector; a dielectric layer on the integrated circuit die; an under-bump metallurgy layer having a line portion on the dielectric layer and having a via portion extending through the dielectric layer to contact the die connector; a through via on the line portion of the under-bump metallurgy layer, the through via having a first curved sidewall proximate the die connector, the through via having a second curved sidewall distal the die connector, the first curved sidewall having a longer arc length than the second curved sidewall; and an encapsulant around the through via and the under-bump metallurgy layer.