公开(公告)号：US20190139895A1

公开(公告)日：2019-05-09

申请号：US15884760

申请日：2018-01-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Cherng JENG ,  Shyh-Wei CHENG ,  Yun CHANG ,  Chen-Chieh CHIANG ,  Jung-Chi JENG

IPC: H01L23/538 ,  H01L21/50 ,  H01L21/762 ,  H01L21/768 ,  H01L23/48 ,  H01L23/522 ,  H01L23/00

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first mask layer over a dielectric layer. The first mask layer has a trench. The trench has an inner wall and a bottom surface. The method includes forming a second mask layer in the trench. The method includes removing the second mask layer covering the bottom surface to form a second trench in the second mask layer. The second trench exposes the bottom surface and is over a first portion of the dielectric layer. The remaining second mask layer covers the inner wall. The method includes removing the first portion, the first mask layer, and the second mask layer to form a third trench in the dielectric layer. The method includes forming a conductive structure in the third trench.

公开(公告)号：US20150158716A1

公开(公告)日：2015-06-11

申请号：US14098974

申请日：2013-12-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Shyh-Wei CHENG ,  Jui-Chun WENG ,  Hsi-Cheng HSU ,  Chih-Yu WANG ,  Chuan-Yi KO ,  Ji-Hong CHIANG ,  Chung-Hsien HUNG ,  Hsin-Yu CHEN ,  Chih-Hsien CHEN ,  Yu-Mei WU ,  Jong CHEN

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/001 ,  B81B3/0005

Abstract: Embodiments of mechanisms for forming a micro-electro mechanical system (MEMS) device are provided. The MEMS device includes a substrate and a MEMS substrate disposed on the substrate. The MEMS substrate includes a movable element, a fixed element and at least a spring connected to the movable element and the fixed element. The MEMS device also includes a polysilicon layer on the movable element.

Abstract translation: 提供了用于形成微机电系统（MEMS）装置的机构的实施例。 MEMS器件包括设置在衬底上的衬底和MEMS衬底。 MEMS基板包括可移动元件，固定元件和连接到可移动元件和固定元件的至少一个弹簧。 MEMS器件还包括可移动元件上的多晶硅层。

公开(公告)号：US20200118932A1

公开(公告)日：2020-04-16

申请号：US16715215

申请日：2019-12-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Cherng JENG ,  Shyh-Wei CHENG ,  Yun CHANG ,  Chen-Chieh CHIANG ,  Jung-Chi JENG

IPC: H01L23/538 ,  H01L23/48 ,  H01L23/00 ,  H01L23/522 ,  H01L21/768 ,  H01L21/762 ,  H01L21/50

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first mask layer over a dielectric layer. The method includes forming a second mask layer over a first top surface of the first mask layer, the inner wall, and the bottom surface. The method includes removing the second mask layer covering the bottom surface to form a second trench in the second mask layer. The method includes forming an anti-bombardment layer over a second top surface of the second mask layer. The second mask layer and the anti-bombardment layer are made of different materials. The method includes removing the first portion, the first mask layer, the second mask layer, and the anti-bombardment layer to form a third trench in the dielectric layer. The method includes forming a conductive structure in the third trench.

公开(公告)号：US20220242724A1

公开(公告)日：2022-08-04

申请号：US17719986

申请日：2022-04-13

Applicant: Taiwan Semiconductor Manufacturing Co.,Ltd.

Inventor： Jui-Chun WENG ,  Lavanya SANAGAVARAPU ,  Ching-Hsiang HU ,  Wei-Ding WU ,  Shyh-Wei CHENG ,  Ji-Hong CHIANG ,  Hsin-Yu CHEN ,  Hsi-Cheng HSU

IPC: B81C1/00 ,  H01J37/34 ,  H01L21/02 ,  B81B3/00

Abstract: A method for treating a micro electro-mechanical system (MEMS) component is disclosed. In one example, the method includes the steps of providing a first wafer, treating the first wafer to form cavities and at least an oxide layer on a top surface of the first wafer using a first chemical vapor deposition (CVD) process, providing a second wafer, bonding the second wafer on a top surface of the at least one oxide layer, treating the second wafer to form a first plurality of structures, depositing a layer of Self-Assembling Monolayer (SAM) to a surface of the MEMS component using a second CVD process.

公开(公告)号：US20190031503A1

公开(公告)日：2019-01-31

申请号：US15904085

申请日：2018-02-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jui-Chun WENG ,  Lavanya SANAGAVARAPU ,  Ching-Hsiang HU ,  Wei-Ding WU ,  Shyh-Wei CHENG ,  Ming-De CHEN ,  Ji-Hong CHIANG ,  Hsin-Yu CHEN ,  Hsi-Cheng HSU

IPC: B81C1/00 ,  B81B3/00

Abstract: A method for treating a micro electro-mechanical system (MEMS) component is disclosed. In one example, the method includes the steps of providing a first wafer, treating the first wafer to form cavities and at least an oxide layer on a top surface of the first wafer using a first chemical vapor deposition (CVD) process, providing a second wafer, bonding the second wafer on a top surface of the at least one oxide layer, treating the second wafer to form a first plurality of structures, depositing a layer of Self-Assembling Monolayer (SAM) to a surface of the MEMS component using a second CVD process.