公开(公告)号：US10522543B2

公开(公告)日：2019-12-31

申请号：US16055526

申请日：2018-08-06

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chih-Wei Lin ,  Chih-Lin Wang ,  Kang-Min Kuo ,  Cheng-Wei Lian

IPC: H01L27/092 ,  H01L29/49 ,  H01L29/51 ,  H01L29/40 ,  H01L21/28 ,  H01L29/423 ,  H01L29/66 ,  H01L21/8238

Abstract: Methods for forming a semiconductor structure are provided. The method includes forming a first dummy gate structure and forming first spacers over a sidewall of the first dummy gate structure. The method includes removing the first dummy gate structure to form a first trench between the first spacers and forming a first capping layer in the first trench. A first portion of the first capping layer covers a sidewall of the first trench and a second portion of the first capping layer covers a bottom surface of the first trench. The method further includes oxidizing a sidewall of the first portion of the first capping layer and a top surface of the second portion of the first capping layer to form a first capping oxide layer and forming a first work function metal layer and forming a first gate electrode layer over the first work function metal layer.

公开(公告)号：US09960246B2

公开(公告)日：2018-05-01

申请号：US15369460

申请日：2016-12-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Wei Lian ,  Chih-Lin Wang ,  Kang-Min Kuo ,  Chih-Wei Lin

IPC: H01L29/78 ,  H01L29/51 ,  H01L21/28 ,  H01L29/66

CPC classification number: H01L29/517 ,  H01L21/28158 ,  H01L21/28194 ,  H01L29/513 ,  H01L29/66545 ,  H01L29/785

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate, an interfacial layer formed over the substrate, and an insertion layer formed over the interfacial layer. The semiconductor structure further includes a gate dielectric layer formed over the insertion layer and a gate structure formed over the gate dielectric layer. The insertion layer and the gate dielectric layer may be metal oxides where the insertion layer has an oxygen coordination number greater than the gate dielectric layer.

公开(公告)号：US09515158B1

公开(公告)日：2016-12-06

申请号：US14918054

申请日：2015-10-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Wei Lian ,  Chih-Lin Wang ,  Kang-Min Kuo ,  Chih-Wei Lin

IPC: H01L29/78 ,  H01L29/51 ,  H01L29/423 ,  H01L21/28 ,  H01L21/02

CPC classification number: H01L29/517 ,  H01L21/28158 ,  H01L21/28194 ,  H01L29/513 ,  H01L29/66545 ,  H01L29/785

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate, an interfacial layer formed over the substrate, and an insertion layer formed over the interfacial layer. The semiconductor structure further includes a gate dielectric layer formed over the insertion layer and a gate structure formed over the gate dielectric layer. In addition, the insertion layer is made of M1Ox, and M1 is a metal, O is oxygen, and x is a value greater than 4.

Abstract translation: 提供半导体结构及其形成方法。 半导体结构包括衬底，在衬底上形成的界面层，以及形成在界面层上的插入层。 半导体结构还包括形成在插入层上的栅极电介质层和形成在栅极介电层上的栅极结构。 此外，插入层由M1Ox制成，M1为金属，O为氧，x为大于4的值。

公开(公告)号：US11362089B2

公开(公告)日：2022-06-14

申请号：US16730271

申请日：2019-12-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chih-Wei Lin ,  Chih-Lin Wang ,  Kang-Min Kuo ,  Cheng-Wei Lian

IPC: H01L27/092 ,  H01L29/49 ,  H01L29/51 ,  H01L29/40 ,  H01L21/28 ,  H01L29/423 ,  H01L29/66 ,  H01L21/8238

Abstract: Semiconductor structures and method for forming the same are provided. The method for manufacturing the semiconductor structure includes forming a first gate dielectric layer over a substrate and forming a first capping layer over the first gate dielectric layer. The method for manufacturing the semiconductor structure includes oxidizing the first capping layer to form a first capping oxide layer and forming a first work function metal layer over the first capping oxide layer. The method for manufacturing the semiconductor structure includes forming a first gate electrode layer over the first work function metal layer.

公开(公告)号：US10043802B2

公开(公告)日：2018-08-07

申请号：US14689859

申请日：2015-04-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Chih-Wei Lin ,  Chih-Lin Wang ,  Kang-Min Kuo ,  Cheng-Wei Lian

IPC: H01L27/092 ,  H01L29/51 ,  H01L29/423 ,  H01L29/49 ,  H01L29/40 ,  H01L21/28 ,  H01L21/8238

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and a gate structure formed over the substrate. The gate structure includes a gate dielectric layer formed over the substrate and a capping layer formed over the gate dielectric layer. The gate structure further includes a capping oxide layer formed over the capping layer and a work function metal layer formed over the capping oxide layer. The gate structure further includes a gate electrode layer formed over the work function metal layer.