公开(公告)号：US11133226B2

公开(公告)日：2021-09-28

申请号：US16169220

申请日：2018-10-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Huan Chen ,  Chien-Chih Chou ,  Ta-Wei Lin ,  Hsiao-Chin Tuan ,  Alexander Kalnitsky ,  Kong-Beng Thei ,  Chia-Hong Wu

IPC: H01L29/49 ,  H01L21/3213 ,  H01L29/423 ,  H01L21/28 ,  H01L29/66 ,  H01L21/8238 ,  H01L29/51 ,  H01L21/3105 ,  H01L29/08 ,  H01L27/092 ,  H01L29/45

Abstract: Various embodiments of the present disclosure are directed towards a method for forming a fully silicided (FUSI) gated device, the method including: forming a masking layer onto a gate structure over a substrate, the gate structure comprising a polysilicon layer. Forming a first source region and a first drain region on opposing sides of the gate structure within the substrate, the gate structure is formed before the first source and drain regions. Performing a first removal process to remove a portion of the masking layer and expose an upper surface of the polysilicon layer. The first source and drain regions are formed before the first removal process. Forming a conductive layer directly contacting the upper surface of the polysilicon layer. The conductive layer is formed after the first removal process. Converting the conductive layer and polysilicon layer into a FUSI layer. The FUSI layer is thin and uniform in thickness.