DISHING PREVENTION STRUCTURE EMBEDDED IN A GATE ELECTRODE

    公开(公告)号:US20210043463A1

    公开(公告)日:2021-02-11

    申请号:US16532753

    申请日:2019-08-06

    Inventor: Ta-Wei Lin

    Abstract: Various embodiments of the present disclosure are directed towards a semiconductor device. The semiconductor device includes a semiconductor substrate. A gate dielectric is disposed over the semiconductor substrate. A first source/drain region and a second source/drain region are disposed in the semiconductor substrate and on opposite sides of the gate dielectric. A gate electrode is disposed over the gate dielectric. A first dishing prevention structure is embedded in the gate electrode, where a perimeter of the first dishing prevention structure is disposed within a perimeter of the gate electrode.

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