公开(公告)号：US11081405B2

公开(公告)日：2021-08-03

申请号：US16396592

申请日：2019-04-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Wei Hung ,  Charng-Long Lu ,  Chien-Feng Lin

IPC: H01L21/66

Abstract: Methods are described that include providing a laser-based measurement tool. An implement of a semiconductor fabrication process tool (e.g., susceptor) is delivered to the laser-based measurement tool where a plurality of measurements is performed of a surface of the implement using a blue wavelength radiation. The measurements are of a distance (e.g., angstroms) from a reference plane and provide an indication of the profile of the surface of the susceptor. As the surface profile of the susceptor can affect layers deposited on target substrates using the susceptor, the measurements provide for a disposition of the susceptor.

公开(公告)号：US09881821B2

公开(公告)日：2018-01-30

申请号：US14983833

申请日：2015-12-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shih-Wei Hung ,  Chia-Chiung Lo ,  Chien-Feng Lin

IPC: H01L21/67 ,  G01B11/06 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/66

CPC classification number: H01L21/67253 ,  G01B11/0641 ,  H01L21/02532 ,  H01L21/02636 ,  H01L21/3065 ,  H01L21/67069 ,  H01L22/12

Abstract: A control wafer making device, a method of measuring an epitaxy thickness in a control wafer, and a method for monitoring a control wafer are provided. In various embodiments, the control wafer making device includes a wafer substrate removing element and an epitaxy forming element. In various embodiments, a control wafer includes a substrate, a recess, a blocking layer, and an epitaxy. The substrate has a surface, and the recess is in the surface of the substrate. The blocking layer is over the surface of the substrate other than the recess. The epitaxy is in the recess. In various embodiments, the thickness of the epitaxy of the control wafer is measured by a polarized light.

公开(公告)号：US20190252271A1

公开(公告)日：2019-08-15

申请号：US16396592

申请日：2019-04-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Wei Hung ,  Charng-Long Lu ,  Chien-Feng Lin

IPC: H01L21/66

CPC classification number: H01L22/12 ,  H01L22/20

Abstract: Methods are described that include providing a laser-based measurement tool. An implement of a semiconductor fabrication process tool (e.g., susceptor) is delivered to the laser-based measurement tool where a plurality of measurements is performed of a surface of the implement using a blue wavelength radiation. The measurements are of a distance (e.g., angstroms) from a reference plane and provide an indication of the profile of the surface of the susceptor. As the surface profile of the susceptor can affect layers deposited on target substrates using the susceptor, the measurements provide for a disposition of the susceptor.

公开(公告)号：US10109467B2

公开(公告)日：2018-10-23

申请号：US15170143

申请日：2016-06-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Wei Hung ,  Chia-Chiung Lo ,  Chien-Feng Lin ,  Tsung-Hsun Yu

IPC: C23C16/44 ,  H01J37/32 ,  H01L21/67 ,  H01L21/3065

Abstract: An apparatus for a semiconductor process includes an exhaust pipe coupled to a reaction chamber and a pump; a pressure control valve that is coupled to the exhaust pipe and configured to control a pressure value in the reaction chamber; a first pipe that is coupled to the exhaust pipe and etching gas source such that the first pipe is configured to provide an etching gas into the exhaust pipe; a second pipe that is coupled to the exhaust pipe and a radical generator such that the second pipe is configured to provide a radical into the exhaust pipe; and a third pipe that is coupled to the exhaust pipe and a diluted gas source such that the third pipe is configured to provide diluted gas into the exhaust pipe.

公开(公告)号：US10043691B2

公开(公告)日：2018-08-07

申请号：US15847823

申请日：2017-12-19

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shih-Wei Hung ,  Chia-Chiung Lo ,  Chien-Feng Lin

IPC: H01L21/67 ,  H01L21/66 ,  H01L21/3065 ,  H01L21/02 ,  G01B11/06

Abstract: A control wafer making device, a method of measuring an epitaxy thickness in a control wafer, and a method for monitoring a control wafer are provided. In various embodiments, the control wafer making device includes a wafer substrate removing element and an epitaxy forming element. In various embodiments, a control wafer includes a substrate, a recess, a blocking layer, and an epitaxy. The substrate has a surface, and the recess is in the surface of the substrate. The blocking layer is over the surface of the substrate other than the recess. The epitaxy is in the recess. In various embodiments, the thickness of the epitaxy of the control wafer is measured by a polarized light.

公开(公告)号：US10276455B2

公开(公告)日：2019-04-30

申请号：US15224191

申请日：2016-07-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Wei Hung ,  Charng-Long Lu ,  Chien-Feng Lin

IPC: G01N21/95 ,  H01L21/66

Abstract: Methods, and corresponding systems, are described that include providing a laser-based measurement tool. An implement of a semiconductor fabrication process tool (e.g., susceptor) is delivered to the laser-based measurement tool where a plurality of measurements is performed of a surface of the implement using a blue wavelength radiation. The measurements are of a distance (e.g., angstroms) from a reference plane and provide an indication of the profile of the surface of the susceptor. As the surface profile of the susceptor can affect layers deposited on target substrates using the susceptor, the measurements provide for a disposition of the susceptor.

公开(公告)号：US20170352524A1

公开(公告)日：2017-12-07

申请号：US15170143

申请日：2016-06-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Wei Hung ,  Chia-Chiung Lo ,  Chien-Feng Lin ,  Tsung-Hsun Yu

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/67

CPC classification number: H01J37/32853 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32834 ,  H01L21/3065 ,  H01L21/67017

Abstract: An apparatus for a semiconductor process includes an exhaust pipe coupled to a reaction chamber and a pump; a pressure control valve that is coupled to the exhaust pipe and configured to control a pressure value in the reaction chamber; a first pipe that is coupled to the exhaust pipe and etching gas source such that the first pipe is configured to provide an etching gas into the exhaust pipe; a second pipe that is coupled to the exhaust pipe and a radical generator such that the second pipe is configured to provide a radical into the exhaust pipe; and a third pipe that is coupled to the exhaust pipe and a diluted gas source such that the third pipe is configured to provide diluted gas into the exhaust pipe.

公开(公告)号：US10103262B2

公开(公告)日：2018-10-16

申请号：US14994060

申请日：2016-01-12

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shih-Wei Hung ,  Chien-Feng Lin ,  Chia-Chiung Lo

IPC: H01L21/336 ,  H01L29/78 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/762 ,  H01L29/04 ,  H01L29/66

Abstract: A method of forming a semiconductor structure includes the following operations: (i) forming a feature comprising germanium over a substrate; (ii) removing a portion of the feature such that an interior portion of the feature is exposed; (iii) exposing a surface of the exposed interior portion to a surrounding containing oxygen; and (iv) treating the germanium oxide on the surface of the exposed interior portion with a liquid containing water.