公开(公告)号：US20240385507A1

公开(公告)日：2024-11-21

申请号：US18787490

申请日：2024-07-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Ta Lu ,  Chih-Chiang Tu ,  Cheng-Ming Lin ,  Ching-Yueh Chen ,  Wei-Chung Hu ,  Ting-Chang Hsu ,  Yu-Tung Chen

IPC: G03F1/24 ,  G03F1/36 ,  G03F1/38 ,  G03F1/54 ,  G03F1/64 ,  G03F7/20

Abstract: A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.

公开(公告)号：US20220350235A1

公开(公告)日：2022-11-03

申请号：US17809979

申请日：2022-06-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Ta Lu ,  Chih-Chiang Tu ,  Cheng-Ming Lin ,  Ching-Yueh Chen ,  Wei-Chung Hu ,  Ting-Chang Hsu ,  Yu-Tung Chen

IPC: G03F1/24 ,  G03F1/54 ,  G03F1/36 ,  G03F1/64 ,  G03F1/38 ,  G03F7/20

Abstract: A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.

公开(公告)号：US20220066312A1

公开(公告)日：2022-03-03

申请号：US17007920

申请日：2020-08-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Ta Lu ,  Chih-Chiang Tu ,  Cheng-Ming Lin ,  Ching-Yueh Chen ,  Wei-Chung Hu ,  Ting-Chang Hsu ,  Yu-Tung Chen

IPC: G03F1/24 ,  G03F7/20 ,  G03F1/36 ,  H01L21/033 ,  G03F1/54 ,  G03F1/64

Abstract: A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.

公开(公告)号：US20230367197A1

公开(公告)日：2023-11-16

申请号：US18359954

申请日：2023-07-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Ta Lu ,  Chih-Chiang Tu ,  Cheng-Ming Lin ,  Ching-Yueh Chen ,  Wei-Chung Hu ,  Ting-Chang Hsu ,  Yu-Tung Chen

IPC: G03F1/24 ,  G03F1/54 ,  G03F1/36 ,  G03F1/64 ,  G03F1/38 ,  G03F7/20

CPC classification number: G03F1/24 ,  G03F1/36 ,  G03F1/38 ,  G03F1/54 ,  G03F1/64 ,  G03F7/2004

Abstract: A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.

公开(公告)号：US10969682B2

公开(公告)日：2021-04-06

申请号：US16913886

申请日：2020-06-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tzung-Shiun Liu ,  Chun-Lang Chen ,  Ching-Yueh Chen

IPC: G03F7/00 ,  G03F7/09 ,  G03F7/32 ,  G03F1/50 ,  G03F7/30

Abstract: An apparatus includes a developing tank, and the developing tank has a sidewall and a bottom. A fluid manifold is adjacent the bottom of the developing tank. The fluid manifold includes a plurality of holes and a plurality of valves. Developer and rinsing fluid flow through the plurality of holes. Each of the plurality of the valves corresponds to a different hole of the plurality of holes, and the plurality of valves allow the developer and the rinsing fluid to flow through the holes when open and prevent the developer and the flowing liquid from flowing through the holes when closed. The developer flows through a developer inlet to the fluid manifold. The rinsing fluid flows through a rinsing fluid inlet to the fluid manifold. A controller is configured to individually control opening and closing of each of the plurality of valves.

公开(公告)号：US10698313B2

公开(公告)日：2020-06-30

申请号：US16179724

申请日：2018-11-02

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tzung-Shiun Liu ,  Chun-Lang Chen ,  Ching-Yueh Chen

IPC: G03D5/00 ,  G03F7/00 ,  G03F7/09 ,  G03F7/32 ,  G03F1/50 ,  G03F7/30

Abstract: An apparatus includes a developing tank and a fluid manifold in the bottom of the developing tank. The fluid manifold includes a plurality of holes through which developer flows and a plurality of valves corresponding to the plurality of holes. The valves allow developer to flow through the holes when open and prevent developer from flowing through the holes when closed. A trench surrounds the fluid manifold through which developer is drained from the developing tank. A controller is configured to control opening and closing of the valves. In an embodiment, the apparatus includes a clamping mechanism configured to insert the substrate into and remove the substrate from the developing tank.

公开(公告)号：US12124163B2

公开(公告)日：2024-10-22

申请号：US18359954

申请日：2023-07-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Ta Lu ,  Chih-Chiang Tu ,  Cheng-Ming Lin ,  Ching-Yueh Chen ,  Wei-Chung Hu ,  Ting-Chang Hsu ,  Yu-Tung Chen

IPC: G03F1/24 ,  G03F1/36 ,  G03F1/38 ,  G03F1/54 ,  G03F1/64 ,  G03F7/20

CPC classification number: G03F1/24 ,  G03F1/36 ,  G03F1/38 ,  G03F1/54 ,  G03F1/64 ,  G03F7/2004

Abstract: A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.

公开(公告)号：US11860530B2

公开(公告)日：2024-01-02

申请号：US17809979

申请日：2022-06-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Ta Lu ,  Chih-Chiang Tu ,  Cheng-Ming Lin ,  Ching-Yueh Chen ,  Wei-Chung Hu ,  Ting-Chang Hsu ,  Yu-Tung Chen

IPC: G03F1/24 ,  G03F1/54 ,  G03F1/36 ,  G03F1/64 ,  G03F1/38 ,  G03F7/20

CPC classification number: G03F1/24 ,  G03F1/36 ,  G03F1/38 ,  G03F1/54 ,  G03F1/64 ,  G03F7/2004

Abstract: A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.