公开(公告)号：US10170343B1

公开(公告)日：2019-01-01

申请号：US15638463

申请日：2017-06-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Chen Wei ,  Chun-Jui Chu ,  Chun-Chieh Chan ,  Jen-Chieh Lai ,  Shih-Ho Lin

IPC: H01L21/67 ,  B08B1/04 ,  B24B37/08 ,  B24B37/04 ,  H01L21/321 ,  H01L21/306

Abstract: Apparatuses and methods for performing a post-CMP cleaning are provided. The apparatus includes a chamber configured to receive a wafer in need of having CMP residue removed. The apparatus also includes a spray unit configured to apply a first cleaning solution to at least one surface of the wafer. The apparatus further includes a brush cleaner configured to scrub the at least one surface of the wafer. In addition, the apparatus includes at least one inner tank disposed in the chamber for storing a second cleaning solution that is used to clean the brush cleaner.

公开(公告)号：US20210060728A1

公开(公告)日：2021-03-04

申请号：US17097668

申请日：2020-11-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Chen Wei ,  Chih-Yuan Yang ,  Shih-Ho Lin ,  Jen Chieh Lai ,  Szu-Cheng Wang ,  Chun-Jui Chu

IPC: B24B53/017 ,  H01L21/306 ,  B24B37/04 ,  B24B53/06 ,  H01L21/321 ,  B24B53/00 ,  B24B1/00

Abstract: A method includes depositing a slurry onto a polishing pad of a chemical mechanical polishing (CMP) station. A workpiece is polished and polishing by-products and slurry are removed from the polishing pad by a vacuum head. A CMP apparatus includes a polishing pad configured to rotate during a CMP process. The apparatus also includes a slurry dispenser configured to deposit a slurry onto a polishing surface of the polishing pad. The apparatus further includes a momentum vacuum assembly including a slotted opening facing the polishing surface of the polishing pad. The apparatus also includes a first suction line coupled to an upper portion of the momentum vacuum assembly and leading to a first vacuum source, the first suction line configured to transport polishing products which have been removed from the polishing pad through the slotted opening.

公开(公告)号：US20240383100A1

公开(公告)日：2024-11-21

申请号：US18787934

申请日：2024-07-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Chen Wei ,  Chih-Yuan Yang ,  Shih-Ho Lin ,  Jen Chieh Lai ,  Szu-Cheng Wang ,  Chun-Jui Chu

IPC: B24B53/017 ,  B24B1/00 ,  B24B37/04 ,  B24B53/00 ,  B24B53/06 ,  H01L21/306 ,  H01L21/321 ,  H01L21/67

Abstract: A method includes depositing a slurry onto a polishing pad of a chemical mechanical polishing (CMP) station. A workpiece is polished and polishing by-products and slurry are removed from the polishing pad by a vacuum head. A CMP apparatus includes a polishing pad configured to rotate during a CMP process. The apparatus also includes a slurry dispenser configured to deposit a slurry onto a polishing surface of the polishing pad. The apparatus further includes a momentum vacuum assembly including a slotted opening facing the polishing surface of the polishing pad. The apparatus also includes a first suction line coupled to an upper portion of the momentum vacuum assembly and leading to a first vacuum source, the first suction line configured to transport polishing products which have been removed from the polishing pad through the slotted opening.

公开(公告)号：US11239092B2

公开(公告)日：2022-02-01

申请号：US16858820

申请日：2020-04-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Chen Wei ,  Chun-Chieh Chan ,  Chun-Jui Chu ,  Jen-Chieh Lai ,  Shih-Ho Lin

IPC: H01L21/321 ,  H01L21/02 ,  H01L21/302 ,  H01L21/768 ,  H01L21/3213 ,  H01L21/67 ,  H01L21/28

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first layer over a substrate. The first layer is made of a semiconductor material. The method includes forming a stop layer over the first layer. The method includes forming a second layer over the stop layer. The second layer is in direct contact with the stop layer. The method includes removing the second layer. The method includes performing an etching process to remove the stop layer and an upper portion of the first layer. The method includes performing a first planarization process over the first layer.