公开(公告)号：US20240021230A1

公开(公告)日：2024-01-18

申请号：US18366779

申请日：2023-08-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Bo-Jhih Shen ,  Kuang-I Liu ,  Joung-Wei Liou ,  Jinn-Kwei Liang ,  Yi-Wei Chiu ,  Chin-Hsing Lin ,  Li-Te Hsu ,  Han-Ting Tsai ,  Cheng-Yi Wu ,  Shih-Ho Lin

IPC: G11C11/16 ,  H10B61/00 ,  H10N50/01 ,  H10N50/10 ,  H10N50/85

CPC classification number: G11C11/161 ,  H10B61/00 ,  H10N50/01 ,  H10N50/10 ,  H10N50/85 ,  G11C2211/5615 ,  G11B5/3909

Abstract: A semiconductor device and a method of forming the same are provided. The method includes forming a bottom electrode layer over a substrate. A magnetic tunnel junction (MTJ) layers are formed over the bottom electrode layer. A top electrode layer is formed over the MTJ layers. The top electrode layer is patterned. After patterning the top electrode layer, one or more process cycles are performed on the MTJ layers and the bottom electrode layer. A patterned top electrode layer, patterned MTJ layers and a patterned bottom electrode layer form MTJ structures. Each of the one or more process cycles includes performing an etching process on the MTJ layers and the bottom electrode layer for a first duration and performing a magnetic treatment on the MTJ layers and the bottom electrode layer for a second duration.

公开(公告)号：US11292101B2

公开(公告)日：2022-04-05

申请号：US15904774

申请日：2018-02-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Chen Wei ,  Jheng-Si Su ,  Shih-Ho Lin ,  Jen-Chieh Lai ,  Chun-Chieh Chan

IPC: B24B49/18 ,  B24B49/16 ,  B24B49/10 ,  B24B37/005 ,  B24B37/32 ,  B24B53/017 ,  B24B37/20 ,  B24B37/04 ,  H01L21/321 ,  B24B53/00

Abstract: A chemical mechanical polishing apparatus is provided. The chemical mechanical polishing apparatus includes a polishing pad, a pad conditioner, a measurement tool, and a controller. The polishing pad is provided in a processing chamber for polishing a wafer placed on the polishing surface of the polishing pad. The pad conditioner is configured to condition the polishing surface. The measurement tool is provided in the processing chamber and configured to measure the downward force of the pad conditioner. The controller is coupled to the pad conditioner and the measurement tool, and is configured to adjust the downward force of the pad conditioner in response to an input from the measurement tool.

公开(公告)号：US12154608B2

公开(公告)日：2024-11-26

申请号：US18366779

申请日：2023-08-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Bo-Jhih Shen ,  Kuang-I Liu ,  Joung-Wei Liou ,  Jinn-Kwei Liang ,  Yi-Wei Chiu ,  Chin-Hsing Lin ,  Li-Te Hsu ,  Han-Ting Tsai ,  Cheng-Yi Wu ,  Shih-Ho Lin

IPC: H10N50/01 ,  G11C11/16 ,  H10B61/00 ,  H10N50/10 ,  H10N50/85 ,  G01R33/09 ,  G11B5/39

Abstract: A semiconductor device and a method of forming the same are provided. The method includes forming a bottom electrode layer over a substrate. A magnetic tunnel junction (MTJ) layers are formed over the bottom electrode layer. A top electrode layer is formed over the MTJ layers. The top electrode layer is patterned. After patterning the top electrode layer, one or more process cycles are performed on the MTJ layers and the bottom electrode layer. A patterned top electrode layer, patterned MTJ layers and a patterned bottom electrode layer form MTJ structures. Each of the one or more process cycles includes performing an etching process on the MTJ layers and the bottom electrode layer for a first duration and performing a magnetic treatment on the MTJ layers and the bottom electrode layer for a second duration.

公开(公告)号：US11990167B2

公开(公告)日：2024-05-21

申请号：US17352658

申请日：2021-06-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Bo-Jhih Shen ,  Kuang-I Liu ,  Joung-Wei Liou ,  Jinn-Kwei Liang ,  Yi-Wei Chiu ,  Chin-Hsing Lin ,  Li-Te Hsu ,  Han-Ting Tsai ,  Cheng-Yi Wu ,  Shih-Ho Lin

IPC: G11C11/16 ,  H10B61/00 ,  H10N50/01 ,  H10N50/10 ,  H10N50/85 ,  G01R33/09 ,  G11B5/39

CPC classification number: G11C11/161 ,  H10B61/00 ,  H10N50/01 ,  H10N50/10 ,  H10N50/85 ,  G01R33/098 ,  G11B5/3909 ,  G11C2211/5615

Abstract: A semiconductor device and a method of forming the same are provided. The method includes forming a bottom electrode layer over a substrate. A magnetic tunnel junction (MTJ) layers are formed over the bottom electrode layer. A top electrode layer is formed over the MTJ layers. The top electrode layer is patterned. After patterning the top electrode layer, one or more process cycles are performed on the MTJ layers and the bottom electrode layer. A patterned top electrode layer, patterned MTJ layers and a patterned bottom electrode layer form MTJ structures. Each of the one or more process cycles includes performing an etching process on the MTJ layers and the bottom electrode layer for a first duration and performing a magnetic treatment on the MTJ layers and the bottom electrode layer for a second duration.

公开(公告)号：US11094554B2

公开(公告)日：2021-08-17

申请号：US15475280

申请日：2017-03-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Ho Lin ,  Jen-Chieh Lai ,  Jheng-Si Su ,  Zhi-Sheng Hsu ,  Po-Ting Huang

IPC: H01L21/321 ,  H01L21/28 ,  B24B37/04 ,  B24B53/017

Abstract: A method for forming a semiconductor device structure is provided. The method includes providing a wafer over a polishing platen. The wafer includes a metal layer and a dielectric layer. The metal layer covers the dielectric layer and fills an opening of the dielectric layer. The method also includes polishing the wafer using a first operation to thin down the metal layer. The first operation has a first polishing selectivity of the metal layer to the dielectric layer. The method further includes polishing the wafer using a second operation to further thin down the metal layer until the dielectric layer is exposed. The second operation has a second polishing selectivity of the metal layer to the dielectric layer. The second polishing selectivity is different from the first polishing selectivity. The first operation and the second operation are performed in-situ on the polishing platen.

公开(公告)号：US20210060728A1

公开(公告)日：2021-03-04

申请号：US17097668

申请日：2020-11-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Chen Wei ,  Chih-Yuan Yang ,  Shih-Ho Lin ,  Jen Chieh Lai ,  Szu-Cheng Wang ,  Chun-Jui Chu

IPC: B24B53/017 ,  H01L21/306 ,  B24B37/04 ,  B24B53/06 ,  H01L21/321 ,  B24B53/00 ,  B24B1/00

Abstract: A method includes depositing a slurry onto a polishing pad of a chemical mechanical polishing (CMP) station. A workpiece is polished and polishing by-products and slurry are removed from the polishing pad by a vacuum head. A CMP apparatus includes a polishing pad configured to rotate during a CMP process. The apparatus also includes a slurry dispenser configured to deposit a slurry onto a polishing surface of the polishing pad. The apparatus further includes a momentum vacuum assembly including a slotted opening facing the polishing surface of the polishing pad. The apparatus also includes a first suction line coupled to an upper portion of the momentum vacuum assembly and leading to a first vacuum source, the first suction line configured to transport polishing products which have been removed from the polishing pad through the slotted opening.

公开(公告)号：US20240383100A1

公开(公告)日：2024-11-21

申请号：US18787934

申请日：2024-07-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Chen Wei ,  Chih-Yuan Yang ,  Shih-Ho Lin ,  Jen Chieh Lai ,  Szu-Cheng Wang ,  Chun-Jui Chu

IPC: B24B53/017 ,  B24B1/00 ,  B24B37/04 ,  B24B53/00 ,  B24B53/06 ,  H01L21/306 ,  H01L21/321 ,  H01L21/67

Abstract: A method includes depositing a slurry onto a polishing pad of a chemical mechanical polishing (CMP) station. A workpiece is polished and polishing by-products and slurry are removed from the polishing pad by a vacuum head. A CMP apparatus includes a polishing pad configured to rotate during a CMP process. The apparatus also includes a slurry dispenser configured to deposit a slurry onto a polishing surface of the polishing pad. The apparatus further includes a momentum vacuum assembly including a slotted opening facing the polishing surface of the polishing pad. The apparatus also includes a first suction line coupled to an upper portion of the momentum vacuum assembly and leading to a first vacuum source, the first suction line configured to transport polishing products which have been removed from the polishing pad through the slotted opening.

公开(公告)号：US11239092B2

公开(公告)日：2022-02-01

申请号：US16858820

申请日：2020-04-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Chen Wei ,  Chun-Chieh Chan ,  Chun-Jui Chu ,  Jen-Chieh Lai ,  Shih-Ho Lin

IPC: H01L21/321 ,  H01L21/02 ,  H01L21/302 ,  H01L21/768 ,  H01L21/3213 ,  H01L21/67 ,  H01L21/28

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first layer over a substrate. The first layer is made of a semiconductor material. The method includes forming a stop layer over the first layer. The method includes forming a second layer over the stop layer. The second layer is in direct contact with the stop layer. The method includes removing the second layer. The method includes performing an etching process to remove the stop layer and an upper portion of the first layer. The method includes performing a first planarization process over the first layer.

公开(公告)号：US10804133B2

公开(公告)日：2020-10-13

申请号：US15993001

申请日：2018-05-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jheng-Si Su ,  Yu-Chen Wei ,  Chih-Yuan Yang ,  Shih-Ho Lin ,  Jen-Chieh Lai

IPC: H01L21/683 ,  H01L21/677 ,  H01L21/687 ,  B25J15/06 ,  B65G61/00 ,  B24B37/20 ,  H01L21/67 ,  B25J11/00

Abstract: A method for transporting an article used in semiconductor fabrication is provided. The method includes moving a first transporter next to an article to have the article faces a plurality of gas holes formed on the first transporter; suspending the article with the first transporter in a non-contact manner by providing a flow of gas through the gas holes of the first transporter; and transferring the article with the first transporter while the flow of gas is continuously provided.

公开(公告)号：US11685015B2

公开(公告)日：2023-06-27

申请号：US16259856

申请日：2019-01-28

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chih-Yuan Yang ,  Huai-Tei Yang ,  Yu-Chen Wei ,  Szu-Cheng Wang ,  Li-Hsiang Chao ,  Jen-Chieh Lai ,  Shih-Ho Lin

IPC: B24B37/32 ,  B24B37/10 ,  H01L21/8234 ,  H01L21/304 ,  H01L29/66 ,  H01L29/78 ,  H01L21/321

CPC classification number: B24B37/32 ,  B24B37/10 ,  H01L21/304 ,  H01L21/3212 ,  H01L21/823431 ,  H01L21/823437 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7851

Abstract: A method of using a polishing system includes securing a wafer in a carrier head, the carrier head including a housing enclosing the wafer, in which the housing includes a retainer ring recess and a retainer ring positioned in the retainer ring recess, the retainer ring surrounding the wafer, in which the retainer ring includes a main body portion and a bottom portion connected to the main body portion, and a bottom surface of the bottom portion includes at least one first engraved region and a first non-engraved region adjacent to the first engraved region; pressing the wafer against a polishing pad; and moving the carrier head or the polishing pad relative to the other.