Chemical mechanical polishing head

    公开(公告)号:US10155297B2

    公开(公告)日:2018-12-18

    申请号:US15205367

    申请日:2016-07-08

    Abstract: To provide improved planarization, techniques in accordance with this disclosure include a CMP station that includes a support plate having a plurality of apertures. An aperture of the plurality of apertures has a first opening and a second opening connected by a slot. Other systems and methods are also disclosed.

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